IP Library Patent Application 12591041
Patent Application
App. No. 12/591,041

Semiconductor device and manufacturing method therefor

Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US None
App. No.
12/591,041
Abstract

The present invention can avoid spaces not filled with resin by using simplified procedures and configuration even when multiple semiconductor chips are stacked, creating an overhanging portion. A semiconductor device 100 includes a substrate 102 ; a first semiconductor chip 110 mounted on the substrate 102 ; a second semiconductor chip 120 stacked over the first semiconductor chip 110 , being separated from the first semiconductor chip 110 , and provided with a portion overhanging from the first semiconductor chip 110 ; and an insulating resin 132 which fills a space between the first semiconductor chip 110 and the second semiconductor chip 120 as well as a space between the overhanging portion of the second semiconductor 120 chip and the substrate 102.

Claims (18)

1 . A semiconductor device comprising:

a substrate;

a first semiconductor chip mounted on the substrate;

a second semiconductor chip stacked over the first semiconductor chip, being separated from the first semiconductor chip, and provided with a portion overhanging from the first semiconductor chip; and

an insulating resin which fills a space between the first semiconductor chip and the second semiconductor chip as well as a space between the overhanging portion of the second semiconductor chip and the substrate.

2 . The semiconductor device according to claim 1 , wherein the insulating resin is formed all over a surface of the second semiconductor chip which faces the first semiconductor chip.

3 . The semiconductor device according to claim 1 , wherein:

the first semiconductor chip includes a first bonding pad formed on a surface which faces the second semiconductor chip, and a first bonding wire which connects the first bonding pad to the substrate;

the second semiconductor chip overhangs over at least part of the first bonding wire; and

the insulating resin fills the at least part of the first bonding wire located below the overhanging portion of the second semiconductor chip.

4 . The semiconductor device according to claim 1 , wherein the second semiconductor chip includes, in the overhanging portion, a second bonding pad formed on a surface opposite from the surface facing the first semiconductor chip, and a second bonding wire which connects the second bonding pad to the substrate;

5 . A manufacturing method for a semiconductor device, comprising:

preparing a first semiconductor chip mounted on a substrate,

placing a layer of an insulating resin, and a second semiconductor chip equal in size to the layer of the insulating resin in this order on the first semiconductor chip so that the second semiconductor chip is provided a overhanging portion from the first semiconductor chip; and

pressing the second semiconductor chip toward the first semiconductor chip and thereby filling the insulating resin into a space between the first semiconductor chip and the second semiconductor chip as well as a space between the overhanging portion of the second semiconductor chip and the substrate.

6 . The manufacturing method for a semiconductor device according to claim 5 , wherein placing the layer of the insulating resin and the second semiconductor chip in this order, the second semiconductor chip is placed on the first semiconductor chip with the layer of the insulating resin pasted all over a surface of the second semiconductor chip which faces the first semiconductor chip.

7 . The manufacturing method for a semiconductor device according to claim 5 , wherein the layer of the insulating resin has a film thickness equal to or larger than height of the first semiconductor chip.

8 . The manufacturing method for a semiconductor device according to claim 5 , wherein the layer of the insulating resin is formed as a film layer.

Assignments (2)
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025193/0147 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 5, 2009
From: MIYAGAWA, YUICHI; MAEDA, TAKEHIKO
To: NEC ELECTRONICS CORPORATION
Reel/Frame 023511/0883 →