Method of manufacturing nonvolatile semiconductor memory device
A method of manufacturing a nonvolatile semiconductor memory device, is achieved by forming a word gate on a gate insulating film which is formed on a wafer substrate; by forming charge accumulation films to cover a surface of the wafer substrate, side surfaces of the word gate and an upper surface of the word gate; by forming a conductive film to cover the charge accumulation film; and by forming control gates by etching the conductive film. The forming the control gates is achieved by setting an etching condition in which a bias power of 100 W to 1500 W is applied to a cathode electrode as a wafer stage on which the wafer substrate is arranged; and by performing anisotropic dry etching.
1 . A method of manufacturing a nonvolatile semiconductor memory device, comprising:
forming a word gate on a gate insulating film which is formed on a wafer substrate;
forming, charge accumulation films to cover a surface of said wafer substrate, side surfaces of said word gate and an upper surface of said word gate;
forming a conductive film to cover said charge accumulation film; and
forming control gates by etching said conductive film,
wherein said forming said control gates comprises
setting an etching condition in which a bias power of 100 W to 1500 W is applied to a cathode electrode as a wafer stage on which said wafer substrate is arranged; and
performing anisotropic dry etching.
2 . The method according to claim 1 , wherein said forming said control gates comprises:
setting the etching condition in which the bias power of 150 W to 500 W is applied to the cathode electrode on which said wafer substrate is arranged; and
performing the anisotropic dry etching.
3 . The method according to claim 1 , wherein said forming said control gates comprises:
performing the etching until an uppermost part of said control gate becomes lower than an upper surface of said word gate.
4 . The method according to claim 1 , wherein said forming said conductive film comprises:
forming said conductive film to have a target width of said control gate.
5 . The method according to claim 1 , further comprising:
forming a silicide layer on upper surfaces of said word gate and said control gates.