Antireflection film, antireflection film manufacturing method, and semiconductor device using the antireflection film
To improve a transmission rate of an antireflection film, the antireflection film includes: a first silicon oxide film (2), which is formed on a silicon substrate ( 1 ); a polysilicon film ( 3 ), which is formed on the first silicon oxide film ( 2 ) to a thickness of 6 nm through 14 nm; and a second silicon oxide film ( 4 ), which is formed on the polysilicon film ( 3 ). The transmission rate of the antireflection film is further improved if a thickness of the first silicon oxide film ( 2 ) is set to 14 nm through 35 nm. When used in a photoelectric conversion element for such as a solid state image sensor and a photovoltaic generator, the antireflection film may enhance efficiency of photoelectric conversion.
1 . An antireflection film, comprising:
a first silicon oxide film which is formed on a semiconductor substrate;
a polysilicon film which is formed on the first silicon oxide film and which has a thickness of 6 nm through 14 nm; and
a second silicon oxide film which is formed on the polysilicon film.
2 . An antireflection film according to claim 1 , wherein the first silicon oxide film has a thickness of 14 nm through 35 nm.
3 . A semiconductor device having an antireflection film, comprising a photoelectric conversion element with the antireflection film formed on its surface, the antireflection film comprising the antireflection film according to claim 1 .
4 . A semiconductor device having an antireflection film according to claim 3 , wherein the photoelectric conversion element comprises a photodiode formed in the semiconductor substrate.
5 . A semiconductor device having an antireflection film according to claim 4 , which is a solid state image sensor comprising the photodiode.
6 . A semiconductor device having an antireflection film according to claim 4 , which is a photovoltaic generator comprising the photodiode.
7 . An antireflection film manufacturing method, comprising:
forming a first silicon oxide film on a semiconductor substrate;
forming a polysilicon film on the first silicon oxide film to a thickness of 6 nm through 14 nm; and
forming a second silicon oxide film on the polysilicon film.
8 . An antireflection film manufacturing method according to claim 7 , wherein the first silicon oxide film has a thickness of 14 nm through 35 nm.
9 . An antireflection film manufacturing method according to claim 8 , further comprising forming a p-n junction photodiode by introducing impurities in the semiconductor substrate,
wherein the first silicon oxide film, the polysilicon film, and the second silicon oxide film are formed on a surface of the p-n junction photodiode.