METHOD AND APPARATUS FOR DESIGNING AN INTEGRATED CIRCUIT
Method and apparatus for designing an integrated circuit by providing an IC layout design. Adding one or more assist features to the IC layout design. Identifying which of the one or more added assist features in the IC layout design will cause one or more defects in the resultant wafer die manufactured from the IC layout design. Amending the one or more identified assist features.
1 . A method for designing an integrated circuit, IC, comprising the steps of:
(a) providing an IC layout design; and
(b) adding one or more assist features to the IC layout design;
(c) identifying which of the one or more added assist features in the IC layout design will cause one or more defects in the resultant wafer die manufactured from the IC layout design; and
(d) amending the one or more assist features identified in step (c); and
(e) identifying any remaining defects using a fine OPC process, wherein the coarse OPC process comprises fewer rules or a simpler model than the fine OPC process.
2 . (canceled)
3 . (canceled)
4 . The method according to claim 1 , wherein step (c) further comprises simulating the IC layout design.
5 . The method according to claim 2 , wherein the simulation is an optical and/or resist simulation.
6 . The method according to claim 1 , wherein the one or more defects is a printed assist feature.
7 . The method according to claim 1 , wherein step (c) further comprises storing the location or locations of the identified one or more assist features.
8 . The method according to claim 1 , wherein step (c) further comprises identifying a neighbouring feature of the IC layout design to the identified one or more assist features.
9 . The method according to claim 1 , wherein step (d) further comprises moving an edge of the one or more identified assist features.
10 . The method according to claim 1 , wherein step (d) further comprises shortening the one or more identified assist features.
11 . The method according to claim 1 , wherein step (d) further comprises moving the one or more identified assist features.
12 . The method according to claim 1 , wherein step (d) further comprises deleting the one or more identified assist features.
13 . The method according to claim 1 , wherein step (b) further comprises adding assist features to the IC layout design such that one or more of the added assist features will cause a defect to be subsequently identified in step (c).
14 . The method according to claim 1 , wherein step (b) is performed to improve the depth of focus of the IC layout design.
15 . The method according to claim 1 , wherein the one or more assist features added in step (b) are added using a design rule.
16 . The method according to claim 13 , wherein the design rule allows a specific proportion of assist features to be printed on a resultant wafer die.
17 . The method according to claim 1 , wherein step (d) is performed such that the probability is reduced of the occurrence of the one or more defects in the resultant wafer die.
18 . The method according to claim 1 , wherein step (d) is performed such that the one or more defects is removed.
19 . (canceled)
20 . (canceled)
21 . (canceled)
22 . An integrated circuit manufactured according to the method comprising the steps of:
(a) providing an IC layout design;
(b) adding one or more assist features to the IC layout design;
(c) identifying which of the one or more added assist features in the IC layout design will cause one or more defects in the resultant wafer die manufactured from the IC layout design;
(d) amending the one or more assist features identified in step (c); and
(e) identifying any remaining defects using a fine OPC process, wherein the coarse OPC process comprises fewer rules or a simpler model than the fine OPC process.
23 . Apparatus for designing an integrated circuit comprising:
means for providing an IC layout design; and
means for adding one or more assist features to the IC layout design;
means for identifying which of the one or more added assist features in the IC layout design will cause one or more defects in the resultant wafer die manufactured from the IC layout design using a coarse optical proximity correction, OPC, process;
means for amending the one or more identified assist features; and
means for identifying any remaining defects using a fine OPC process, wherein the coarse OPC process comprises fewer rules or a simpler model than the fine OPC process.
24 . The integrated circuit according to claim 22 , wherein the one or more defects is a printed assist feature.