Process for preparing an electronic device

1. A process for preparing a transistor device, comprising a dielectric layer ( 3 ) and an organic semiconductor (OSC) layer ( 7 ), the process comprising

applying a sacrificial layer ( 4 ) on top of a dielectric layer ( 3 ) or on top of an organic semiconductor (OSC) layer ( 7 ),

applying a further layer on at least some parts of the sacrificial layer ( 4 ), wherein said further layer is a conductor or a gate, source or drain electrode,

subjecting the device to plasma treatment after said sacrificial layer ( 4 ) has been applied or wherein said further layer is patterned, and

removing those parts of the sacrificial layer ( 4 ) that have been exposed to the plasma or are not covered by the further layer after patterning.

2. A process according to claim 1 , wherein the transistor device is a bottom gate (BG), bottom contact (BC) transistor device comprising the following components in the sequence described below:

optionally a substrate ( 1 ),

a gate electrode ( 2 ),

an insulator layer comprising a dielectric ( 3 ),

source and drain electrodes ( 5 ),

an OSC layer ( 7 ), and

a sacrificial layer ( 4 ) between the insulator layer and the source and drain electrodes.

3. A process according to claim 2 , comprising applying a gate electrode ( 2 ) on a substrate ( 1 ), applying a dielectric layer ( 3 ) on top of the gate electrode ( 2 ) and the substrate ( 1 ), applying a sacrificial layer ( 4 ) on top of the dielectric layer ( 3 ), applying source and drain electrodes ( 5 ) on top of the sacrificial layer ( 4 ), removing those parts of the sacrificial layer that are not covered by the source and drain electrodes ( 5 ), and applying an OSC layer ( 7 ) on top of the electrodes ( 5 ) and the dielectric layer ( 3 ).

4. A process according to claim 1 , wherein the transistor device is a top gate (TG), BC transistor device comprising the following components in the sequence described below:

a substrate ( 1 ),

source and drain electrodes ( 5 ),

an OSC layer ( 7 ),

an insulator layer comprising a dielectric ( 3 ),

a gate electrode ( 2 ), and

a sacrificial layer ( 4 ) between the insulator layer and the gate electrode.

5. A process according to claim 4 , comprising applying source and drain electrodes ( 5 ) on a substrate ( 1 ), applying an OSC layer ( 7 ) on top of the electrodes ( 5 ) and the substrate ( 1 ), applying a dielectric layer ( 3 ) on top of the OSC layer ( 7 ), applying a sacrificial layer ( 4 ) on top of the dielectric layer ( 3 ), applying a gate electrode ( 2 ) on top of the sacrificial layer ( 4 ), and removing those parts of the sacrificial layer that are not covered by the gate electrode ( 2 ).

6. A process according to claim 1 , wherein the transistor device is a TG, TC transistor device comprising the following components in the sequence described below:

a substrate ( 1 ),

an OSC layer ( 7 ),

source and drain electrodes ( 5 ),

an insulator layer comprising a dielectric ( 3 ),

a gate electrode ( 2 ), and

a sacrificial layer ( 4 a ) between the OSC layer and the source and drain electrodes and a sacrificial layer ( 4 b ) between the insulator layer and the gate electrode.

7. A process according to claim 6 , comprising applying an OSC layer ( 7 ) on a substrate ( 1 ), applying a sacrificial layer ( 4 a ) on top of the OSC layer ( 7 ), applying source and drain electrodes ( 5 ) on top of the OSC layer ( 7 ) or the sacrificial layer ( 4 a ), optionally removing those parts of the sacrificial layer ( 4 a ) that are not covered by the source and drain electrodes ( 5 ), applying a dielectric layer ( 3 ) on top of the source and drain electrodes ( 5 ), applying a sacrificial layer ( 4 b ) on top of the dielectric layer ( 3 ), applying a gate electrode ( 2 ) on top of the dielectric layer ( 3 ) or the sacrificial layer ( 4 b ), and removing those parts of the sacrificial layer ( 4 b ) that are not covered by the gate electrode ( 2 ).

8. A process according to claim 1 , wherein the device is exposed to a plasma of high energy particles or beams after applying the sacrificial layer ( 4 ).

9. A process according to claim 8 , wherein said plasma is a plasma of O 2 , Ar or CF 4 or a mixture thereof.

10. A process according to claim 1 , wherein the thickness of the sacrificial layer is from 1 to 500 nm.

11. A process according to claim 1 , wherein the sacrificial layer comprises an organic or inorganic material.

12. A process according to claim 11 , wherein the sacrificial layer comprises a material selected from the group consisting of organic polymers, inorganic oxides, nanoparticles, and hybrids thereof, all of which are solution processable or vacuum deposited.

13. A process according to claim 11 , wherein the sacrificial layer comprises a polymer selected from the group consisting of partially fluorinated organic polymers, perfluorinated organic polymers, polyimides, polycycloolefins, polycycloolefins with alkoxysilane groups, polycycloolefins with vinyl alkoxy silane groups, curable polysilsesquioxanes, thermosetting polysiloxane resins, polyacenaphthylenes, poly-N-vinylcarbazoles, poly(2-vinylnaphthalenes), poly(4-vinylbiphenyls), poly(1-vinylnaphthalenes), and precursors thereof.

14. A transistor device obtained by a process according to claim 1 .

15. A transistor device according to claim 14 , which is an OFET, integrated circuit (IC), thin film transistor (TFT), or Radio Frequency Identification (RFID) tag.

16. A process according to claim 1 , wherein the dielectric layer is a gate insulator.

17. A process according to claim 1 , wherein the dielectric layer is an insulating interlayer.

18. A process according to claim 1 , wherein said further layer is a conductor.

19. A process according to claim 1 , wherein said further layer is a gate, source or drain electrode.

20. A process according to claim 1 , wherein said sacrificial layer is subjected to plasma treatment.

21. A process according to claim 1 , wherein a sacrificial layer is placed in the transistor between the dielectric layer, which is a gate insulator ( 84 a ) or the semiconductor layer ( 44 ) and the gate electrode ( 42 ) or source and drain electrodes ( 41 , 43 ).

22. A process for preparing a transistor device, comprising a dielectric layer ( 3 ) and an organic semiconductor (OSC) layer ( 7 ), the process comprising

a) providing one or more gate electrodes ( 2 ) on a substrate ( 1 ),

b) providing a layer of a dielectric ( 3 ) on the substrate ( 1 ) and the gate electrodes ( 2 ),

c) providing a sacrificial layer ( 4 ) on top of the dielectric layer ( 3 ),

d) providing one or more second electrodes ( 5 ) on top of the sacrificial layer ( 4 ),

e) providing a photoresist layer ( 6 ) on top of the second electrodes ( 5 ),

f) treating the photoresist ( 6 ) to leave a pattern of areas with photoresist and a pattern of areas without photoresist ( 6 ) on top of the second electrodes ( 5 ), wherein possible residues are formed,

g) removing those parts of the second electrodes ( 5 ) that are not covered by the photoresist ( 6 ), to form source and drain electrodes ( 5 ) that are covered by the photoresist,

h1) removing the photoresist ( 6 ),

i1) removing those parts of the sacrificial layer ( 4 ) that are not covered by the source and drain electrodes ( 5 ),

k1) optionally treating the remaining parts of the sacrificial layer ( 4 ), optionally by washing, to remove possible residues caused by step f), which residues optionally include ions, or doping sites, and

m1) applying an OSC layer ( 7 ) onto the uncovered parts of the dielectric layer ( 3 ) and the source and drain electrodes ( 5 ),

or, alternatively to steps h1)-m1),

h2) removing those parts of the sacrificial layer ( 4 ) that are not covered by the source and drain electrodes ( 5 ),

i2) optionally curing the remaining parts of the sacrificial layer ( 4 ),

k2) removing the photoresist ( 6 ),

m2) optionally treating the remaining parts of the sacrificial layer ( 4 ), optionally by washing, to remove possible residues caused by step f), which residues optionally include ions, or doping sites, and

n2) applying an OSC layer ( 7 ) onto the uncovered parts of the dielectric layer ( 3 ) and the source and drain electrodes ( 5 ).

23. A process for preparing a transistor device, comprising a dielectric layer ( 3 ) and an organic semiconductor (OSC) layer ( 7 ), the process comprising

a) providing one or more gate electrodes ( 2 ) on a substrate ( 1 )

b) forming a layer of a dielectric ( 3 ) on the substrate ( 1 ) and the gate electrodes ( 2 ),

c) providing a sacrificial layer ( 4 ) on top of the dielectric layer ( 3 ),

d) providing one or more source and drain electrodes ( 5 ) on top of the sacrificial layer ( 4 ),

e) providing a bank structure layer ( 6 ) on top of the sacrificial layer ( 4 ) and the source and drain electrodes ( 5 ), so that it does at least partially cover the sacrificial layer ( 4 ) and the source and drain electrodes ( 5 ),

f) subjecting the bank structure layer ( 6 ), and those parts of the sacrificial layer ( 4 ) that are not covered by the source and drain electrodes ( 5 ) or the bank structure layer ( 6 ), to plasma treatment, wherein possible residues are formed,

g) removing those parts of the sacrificial layer ( 4 ) that are not covered by the source and drain electrodes ( 5 ) or the bank structure layer ( 6 ),

h) optionally treating the remaining parts of the sacrificial layer ( 4 ), optionally by washing, to remove possible residues caused by step f), which residues optionally include ions, or doping sites, and

i) applying an OSC layer ( 7 ) onto the uncovered parts of the dielectric layer ( 3 ) and the source and drain electrodes ( 5 ).