Ultra-thin organic TFT chemical sensor, making thereof, and sensing method
An embodiment of the invention is an organic thin film transistor chemical sensor. The sensor includes a substrate. A gate electrode is isolated from drain and source electrodes by gate dielectric. An organic ultra-thin semiconductor thin film is arranged with respect to the gate, source and drain electrodes to act as a conduction channel in response to appropriate gate, source and drain potentials. The organic ultra-thin film is permeable to a chemical analyte of interest and consists of one or a few atomic or molecular monolayers of material. An example sensor array system includes a plurality of sensors of the invention. In a preferred embodiment, a sensor chip having a plurality of sensors is mounted in a socket, for example by wire bonding. The socket provides thermal and electrical interference isolation for the sensor chip from associated sensing circuitry that is mounted on a common substrate, such as a PCB (printed circuit board). A method of operating an organic thin film transistor chemical sensor exposes the sensor to a suspected analyte. A low duty cycle voltage pulse train is applied to the gate electrode to reduce baseline drift while sensing for a conduction channel change.
1. A chemical sensor, comprising:
a substrate;
a gate electrode isolated from drain and source electrodes by gate dielectric;
an organic ultra-thin semiconductor thin film arranged with respect to said gate, source and drain electrodes to act as a conduction channel in response to appropriate gate, source and drain potentials, said organic ultra-thin film being permeable to a chemical analyte of interest and consisting of one or a few atomic or molecular monolayers of material, wherein said thin film comprises one of the group consisting of copper phthalocyanine (CuPc), CuC 32 N 8 H 16 , cobalt phthalocyanine (CoPc) and CoC 32 N 8 H 16 , metal-free phthalocyanine (H 2 Pc), C 32 N 8 H 18 , and Copper-Hexadecafluorophthalocyanine (F 16 CuPc or F 16 CuC 32 N 8 H 16 ).
2. The sensor of claim 1 , wherein said thin film comprises one of copper phthalocyanine (CuPc)and CuC 32 N 8 H 16 .
3. The sensor of claim 1 , wherein said thin film comprises one of cobalt phthalocyanine (CoPc) and CoC 32 N 8 H 16 .
4. The sensor of claim 1 , wherein said thin film comprises one of metal-free phthalocyanine (H 2 Pc) and C 32 N 8 H 18 .
5. The sensor of claim 1 , wherein said thin film comprises CuPc.
6. The sensor of claim 1 , wherein said thin film comprises one of Copper-Hexadecafluorophthalocyanine (F 16 CuPc or F 16 CuC 32 N 8 H 16 ).
7. The sensor of claim 1 , wherein said thin film consists of less than 4 atomic or molecular monolayers of the material.
8. A sensor system comprising:
a sensor chip having a plurality of sensors of claim 1 ;
socket that mounts the sensor chip to a substrate and provides thermal and electrical interference isolation for the sensor chip; and
sensing circuitry mounted on the substrate for controlling sensing operations conducted by the plurality of sensors.
9. A method of operating an organic thin film transistor chemical sensor, the method comprising:
exposing the chemical sensor to a suspected analyte; and
applying a low frequency and low duty cycle voltage pulse train to bias a gate electrode of the sensor to reduce baseline drift while sensing for a conduction channel change.
10. The method of claim 9 , wherein said low duty cycle comprises about 10% or less.
11. The method of claim 10 , wherein said low frequency comprises about 10 Hz or less.
12. The method of claim 9 , wherein said low frequency comprises 0.1 Hz.
13. The method of claim 9 , wherein said step of exposing comprises exposing the chemical sensor to low duty cycle pulses of the suspected analyte.
14. The method of claim 13 , wherein said low duty cycle pulses of the suspected analyte comprise about 10% or less duty cycle pulses.
15. A method of fabricating an organic thin film transistor chemical sensor having a channel consisting of one or a few atomic or molecular monolayers, the method comprising:
forming a dielectric on a substrate;
forming a gate contact on the bottom of the substrate:
forming tapered source and drain contacts while controlling the formation to avoid undercutting of the contacts;
cleaning the source and drain contacts and gate dielectric via ultrasonication; and
forming the one or a few monolayers of organic material over the gate dielectric and source and drain contacts.
16. The method of claim 15 , wherein said step of cleaning comprises plural ultrasonications conducted in a sequence of trichloroethylene, acetone, and then isopropyl alcohol.
17. The sensor of claim 1 , wherein said drain and source electrodes are tapered at a >90 degree angle relative to the gate dielectric and said thin film contacts the taper of said drain and source electrodes.
18. The method of claim 9 , wherein the sensor comprises a substrate; a gate electrode isolated from drain and source electrodes by gate dielectric; an organic ultra-thin semiconductor thin film arranged with respect to said gate, source and drain electrodes to act as a conduction channel in response to appropriate gate, source and drain potentials, said organic ultra-thin film being permeable to a chemical analyte of interest and consisting of one or a few atomic or molecular monolayers of material.