Cleaning solution for substrate for semiconductor device and process for producing substrate for semiconductor device
View Patent ↗To provide a cleaning solution for a substrate for a semiconductor device which is excellent in the ability to remove particles, organic contaminants, metal contaminants and composite contaminants of an organic matter and a metal attached on a substrate surface, whereby the substrate surface can be highly cleaned, without being corroded. Particularly, to provide a cleaning solution which is excellent in the ability to clean low dielectric constant (Low-k) materials on which liquid is easily repelled due to hydrophobic and of which the ability to remove particles is poor. A cleaning solution for a substrate for a semiconductor device, which comprises the following components (A) and (B): (A) an organic acid (B) a nonionic surfactant having an HLB value of from 5 to less than 13.
1. A cleaning solution for a substrate of a semiconductor device, which comprises the following components (A), (B) and (C):
(A) an organic acid,
(B) a nonionic surfactant having an HLB value of from 5 to less than 13; and
(C) a nonionic surfactant having an HLB value of from 13 to 20.
2. The cleaning solution for a substrate of a semiconductor device according to claim 1 , wherein the content of the component (B) is from 0.0005 to 5 wt %.
3. The cleaning solution for a substrate of a semiconductor device according to claim 1 , wherein the relative content (weight ratio) of the component (B) to the component (C) is component (B): component (C)=1:1 to 10:1.
4. The cleaning solution for a substrate of a semiconductor device according to claim 1 , which further contains a component (D): an anionic surfactant other than the component (C).
5. The cleaning solution for a substrate of a semiconductor device according to claim 1 , wherein the organic acid (A) is a polycarboxylic acid.
6. The cleaning solution for a substrate of a semiconductor device according to claim 1 , which has a pH of from 1 to 5.
7. The cleaning solution for a substrate of a semiconductor device according to claim 1 , which further contains a component (E): a complexing agent.
8. A method for cleaning a substrate of a semiconductor device, which comprises cleaning a substrate of a semiconductor device by means of the cleaning solution as defined in claim 1 .
9. The cleaning solution for a substrate of a semiconductor device as defined in claim 1 , which has an etching rate of a wiring material on the substrate of a semiconductor device of at most 0.06 nm/minute and a removing efficiency of particle contaminants of at least 95%.
10. The cleaning solution for a substrate of a semiconductor device according to claim 9 , wherein the wiring material on the substrate of a semiconductor device is copper.
11. A method for cleaning a substrate of a semiconductor device, which comprises cleaning a substrate of a semiconductor device which has a wiring material on its surface by means of the solution as defined in claim 9 .
12. A process for producing a substrate of a semiconductor device, which comprises forming a wiring material layer on said substrate and chemical mechanical polishing (CMP) its surface, and cleaning the wiring material layer after the CMP by means of a cleaning solution which comprises the following components (A), (B) and (C):
(A) an organic acid,
(B) a nonionic surfactant having an HLB value of from 5 to less than 13; and
(C) a nonionic surfactant having an HLB value of from 13 to 20.