SEMICONDUCTOR DEVICE

1 . A semiconductor device comprising:

an inductor configured to supply a current to a first node based on a higher voltage region power supply voltage;

a first switch configured to selectively supply a current from said first node into a third node based on a voltage on a second node;

a second switch configured to selectively supply a current from said first node into said second node based on a voltage of said third node;

a third switch configured to supply the current from said third node into a ground terminal based on a lower voltage region input logic level; and

a fourth switch configured to be turned ON/OFF alternately with said third switch to supply the current from said second node to said ground terminal.

2 . The semiconductor device according to claim 1 , wherein the voltage of said first node varies due to electromotive force induced said inductor to increase or decrease with respect to the higher voltage side power supply voltage,

when the lower voltage region input logic level varies from a low logic level to a high logic level, the voltage of said second node varies from a low logic level to a high logic level due to the increase of the first node voltage faster than a case of no inductor so as to become higher than the higher voltage side power supply voltage, and

when the lower voltage region input logic level varies from the low logic level to the high logic level, the voltage of said third node decreases from the high logic level to the low logic level due to the decrease of the first node voltage faster than a case of no inductor so as to become lower than the higher voltage side power supply voltage.

3 . The semiconductor device according to claim 1 , wherein either of said second node and said third node is connected with an output terminal.

4 . The semiconductor device according to claim 3 , wherein said first switch is a first P-channel transistor, said second switch is a second P-channel transistor, said third switch is a first N-channel transistor, and said fourth switch is a second N-channel transistor.

5 . The semiconductor device according to claim 4 , further comprising:

a third N-channel transistor provided between said third node and said first N-channel transistor to supply a current from said third node to said first N-channel transistor based on the voltage of said output terminal; and

a fourth N-channel transistor provided between said second node and said second N-channel transistor to supply a current from said second node to said second N-channel transistor based on the voltage of said output terminal.

6 . The semiconductor device according to claim 4 , further comprising:

a third P-channel transistor provided between said third node and said first P-channel transistor to supply a current from said first P-channel transistor to said third node based on the lower voltage region input logic level; and

a fourth P-channel transistor provided between said second node and said second P-channel transistor to supply a current from said second P-channel transistor to said second node based on the lower voltage region input logic level.

7 . The semiconductor device according to claim 1 , wherein said first switch and said second switch are a part of a P-channel MOS logic circuit, and

said third switch and said fourth switch are a part of an N-channel MOS logic circuit.