Method of forming an insulation film having low impurity concentrations
A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species; wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).
1. A method of manufacturing a semiconductor device, the method comprising:
forming an oxide film on a substrate by alternately repeating:
(a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and
(b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species;
wherein the hydrogen-containing gas is supplied into the process vessel together with the source gas in step (a).
2. The method of claim 1 , wherein a temperature of the substrate ranges from 450° C. to 700° C. in the forming of the oxide film.
3. The method of claim 1 , wherein a temperature of the substrate ranges from 450° C. to 650° C. in the forming of the oxide film.
4. The method of claim 1 , wherein a temperature of the substrate is maintained at a constant temperature in the forming of the oxide film.
5. The method of claim 1 , wherein the oxygen-containing gas and the hydrogen-containing gas are supplied through a same nozzle in the step (b).
6. The method of claim 1 , wherein the element is a semiconductor element or a metal element.
7. The method of claim 1 , further comprising (c) gas-purging an inside of the process vessel using an inert gas containing no nitrogen while alternately repeating the steps (a) and (b).
8. The method of claim 7 , wherein the inert gas is a rare gas.
9. The method of claim 1 , wherein the oxygen-containing gas comprises oxygen gas and the hydrogen-containing gas comprises hydrogen gas.
10. The method of claim 1 , wherein the oxygen-containing gas comprises oxygen gas or ozone gas and the hydrogen-containing gas comprises hydrogen gas or deuterium gas.
11. The method of claim 1 , wherein a temperature of the substrate ranges from 400° C. to 700° C. in the forming of the oxide film.
12. The method of claim 1 , wherein the element comprises silicon.
13. The method of claim 1 , wherein the step (b) is performed in a non-plasma atmosphere.
14. The method of claim 1 , further comprising gas-purging an inside of the process vessel using an inert gas while alternately repeating the steps (a) and (b).
15. A method of manufacturing a semiconductor device, the method comprising:
forming an oxide film on a substrate by alternately repeating:
(a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and
(b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate oxidizing species containing oxygen, and oxidizing the element-containing layer by the oxidizing species;
wherein the hydrogen-containing gas is always supplied into the process vessel in forming the oxide film.