Large area patterning of nano-sized shapes
View Patent ↗Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
1. A method of forming an imprint lithography template, comprising:
forming a first pattern of grooves in a first layer formed of a non-wet strippable resist material positioned on a substrate, wherein forming the first pattern includes:
depositing a second layer of wet strippable resist on the first layer;
depositing formable material on the second layer;
imprinting the formable material using a nano-imprint lithography template to form a third layer of resist having a first patterned layer, the first patterned layer including a plurality of raised portion separated by depressions;
etching the third layer such that a ratio of height to width of the raised portions substantially increases;
depositing an overcoat layer on the third layer and planarizing the overcoat layer exposing an edge of each raised portion;
etching the third layer to form one or more trenches in the second layer and the first layer; and,
removing the second layer and the third layer;
forming a second pattern of grooves in a second layer overlaying the first pattern in the first layer, the second pattern of grooves oriented at an angle relative to the first pattern of grooves; and,
etching the first pattern and the second pattern into the substrate forming a nano-shaped imprint lithography template having a surface imprinting pattern, the surface imprinting pattern including a plurality of features having at least one sharp edge defined by the intersection of the first and second pattern of grooves.
2. The method of claim 1 , wherein the second layer is formed of a soluble material.
3. The method of claim 2 , wherein the second layer includes polymethylglutarimide.
4. The method of claim 1 , wherein the second layer is formed of a negative photoresist.
5. The method of claim 4 , wherein the second layer includes poly hydroxyl styrene.
6. The method of claim 1 , wherein the second layer includes an intermediate layer, the intermediate layer having adhesive properties.
7. The method of claim 1 , wherein width of the raised portions are substantially similar to width of the depressions prior to etching of the third layer.
8. The method of claim 1 , wherein the overcoat layer includes a silicon containing polymer.
9. The method of claim 1 , wherein etching the third layer to form one or more trenches in the second layer and the first layer further comprises dry etching the first layer.
10. A method, comprising:
forming a first pattern of grooves in a first layer formed of a non-wet strippable resist material positioned on a substrate, wherein forming the first pattern of grooves includes
depositing a second layer of wet strippable resist on the first layer;
depositing formable material on the second layer;
imprinting the formable material using a nano-imprint lithography template to form a third layer of resist having a first patterned layer, the first patterned layer including a plurality of raised portion separated by depressions;
etching the third layer such that a ratio of height to width of the raised portions substantially increases;
depositing an overcoat layer on the third layer and planarizing the overcoat layer exposing an edge of each raised portion;
etching the third layer to form one or more trenches in the second layer and the first layer; and, removing the second layer and the third layer;
forming a second pattern overlaying the first pattern in the first layer; and,
etching the first pattern and the second pattern into the substrate forming a nano-shaped imprint lithography template having a surface pattern, the surface pattern including a plurality of features having at least one sharp edge.
11. The method of claim 10 , wherein the second layer is formed of a soluble material.
12. The method of claim 11 , wherein the second layer includes polymethylglutarimide.
13. The method of claim 10 , wherein the second layer is formed of a negative photoresist.
14. The method of claim 13 , wherein the second layer includes poly hydroxyl styrene.
15. The method of claim 10 , wherein width of the raised portions are substantially similar to width of the depressions prior to etching of the third layer.
16. The method of claim 10 , wherein the overcoat layer includes a silicon containing polymer.
17. The method of claim 10 , wherein etching the third layer to form one or more trenches in the second layer and the first layer further comprises dry etching the first layer.
18. A method, comprising:
forming a first pattern of grooves in a first layer of metal positioned on a substrate, wherein forming the first pattern of grooves includes
depositing a second layer on the first layer, the second layer formed of wet strippable resist material;
depositing formable material on the second layer;
imprinting the formable material using a nano-imprint lithography template to form a third layer of resist having a first patterned layer, the first patterned layer including a plurality of raised portion separated by depressions;
etching the third layer such that a ratio of height to width of the raised portions substantially increases;
depositing an overcoat layer on the third layer and planarizing the overcoat layer exposing an edge of each raised portion;
etching the third layer to form one or more trenches in the second layer and the first layer; and,
removing the second layer and the third layer;
forming a second pattern overlaying the first pattern in the first layer; and,
etching the first pattern and the second pattern into the substrate forming a nano-shaped imprint lithography template having a surface pattern, the surface pattern including a plurality of features having at least one sharp edge.