Substrate holding mechanism, substrate polishing apparatus and substrate polishing method
View Patent ↗A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.
1. A method of polishing a substrate to be polished, said method comprising:
polishing the substrate by holding the substrate with a substrate holding mechanism and pressing the substrate against a polishing surface of a polishing pad that is on a rotating polishing table; and
supplying room-temperature air or low-temperature air directly to a cooling spot on the polishing surface from a pad surface cooling device that is installed near the substrate holding mechanism so that a temperature of the polishing surface is maintained in a predetermined range during said polishing;
wherein a portion of the polishing surface on one side of the polishing table has frictional heat generated by relative movement between the substrate and the polishing surface during said polishing;
wherein said cooling spot is in the neighborhood of the portion of the polishing surface;
wherein said polishing comprises rotating the polishing table in a direction of rotation and wherein the cooling spot includes an area that is immediately downstream of the substrate holding mechanism with respect to the direction of rotation; and
wherein an amount of the room-temperature air or low-temperature air supplied to the cooling spot is greater than that supplied to an area on the polishing surface other than the cooling spot.
2. The method of claim 1 , further comprising:
covering the polishing surface and a substrate holding part of the substrate holding mechanism with a dome having an inlet port and an outlet port; and
inducing a gas stream from the inlet port toward the outlet port by locally evacuating an inside of the dome to cool the polishing surface and the substrate holding part with a low-temperature gas supplied from a low-temperature gas supply.
3. The method of claim 1 , further comprising:
supplying a low-temperature gas to a reverse side of the substrate being polished from a low-temperature gas supply to cool the substrate.
4. The method of claim 1 , wherein the substrate has a thin film of wiring material formed over a primary layer that includes recesses therein, and said polishing removes the wiring material exclusive of the wiring material in the recesses.
5. The method of claim 1 , wherein the pad surface cooling device comprises a blast fan.
6. A method of polishing a substrate to be polished, said method comprising:
polishing the substrate by holding the substrate with a substrate holding mechanism and pressing the substrate against a polishing surface of a polishing pad that is on a rotating polishing table; and
supplying room-temperature air or low-temperature air directly to a cooling spot on the polishing surface from a pad surface cooling device that is located adjacent to the polishing table so that a temperature of the polishing surface is maintained in a predetermined range during said polishing;
wherein the polishing surface has frictional heat generated by relative movement between the substrate and the polishing surface during said polishing; and
wherein said polishing comprises rotating the polishing table in a direction of rotation and wherein the cooling spot is an area immediately downstream of the substrate holding mechanism with respect to the direction of rotation; and
wherein an amount of the room-temperature air or low-temperature air supplied to the cooling spot is greater than that supplied to an area on the polishing surface other than the cooling spot.
7. The method of claim 6 , further comprising:
covering the polishing surface and a substrate holding part of the substrate holding mechanism with a dome having an inlet port and an outlet port; and
inducing a gas stream from the inlet port toward the outlet port by locally evacuating an inside of the dome to cool the polishing surface and the substrate holding part with a low-temperature gas supplied from a low-temperature gas supply.
8. The method of claim 6 , further comprising:
supplying a low-temperature gas to a reverse side of the substrate being polished from a low-temperature gas supply to cool the substrate.
9. The method of claim 6 , wherein the substrate has a thin film of wiring material formed over a primary layer that includes recesses therein, and said polishing removes the wiring material exclusive of the wiring material in the recesses.
10. The method of claim 6 , wherein the pad surface cooling device comprises a blast fan.
11. The method of claim 6 , wherein the predetermined range is 40-65 degrees C.
12. The method of claim 1 , wherein the cooling spot is an area of the polishing surface that is smaller than the entirety of the polishing surface.
13. The method of claim 1 , wherein the cooling spot is an area of the portion of the polishing surface that is located between the substrate holding mechanism and the cooling device, and the cooling spot is an area smaller than both of the area of the polishing surface and the area of the portion of the polishing surface.