Semiconductor laser and manufacturing process thereof
View Patent ↗A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer disposed above the first upper cladding layer and having a mesa structure, a high-order mode filter layer formed on both side faces of the second upper cladding layer, continuously extending from the both side faces onto at least a part of a side region on both sides of the second upper cladding layer and having a band gap not exceeding a band gap of the active layer, and a block layer formed on the high-order mode filter layer and on a side region on both sides of the second upper cladding layer and including a layer having a band gap greater than a band gap of the active layer.
1. A semiconductor laser comprising:
a semiconductor substrate;
a lower cladding layer disposed above said semiconductor substrate;
an active layer disposed above said lower cladding layer;
a first upper cladding layer disposed above said active layer;
a second upper cladding layer disposed above said first upper cladding layer and having a mesa structure;
a high-order mode filter layer formed on both side faces of said second upper cladding layer, continuously extending from said both side faces onto at least a part of a side region on both side regions of said second upper cladding layer and having a band gap not exceeding a band gap of said active layer; and
a block layer formed on said high-order mode filter layer and on the regions of both side regions of said second upper cladding layer, said block layer including a layer having a band gap greater than the band gap of said active layer,
wherein said high-order mode filter layer includes a GaInP layer.
2. The semiconductor laser according to claim 1 , wherein
the high-order mode filter layer continuously extends from both side faces of said mesa structure to both end faces.
3. The semiconductor laser according to claim 1 , wherein
said active layer has a saturable absorption region formed on both sides of a gain region.
4. A semiconductor laser comprising:
a semiconductor substrate;
a lower cladding layer disposed above said semiconductor substrate;
an active layer disposed above said lower cladding layer;
a first upper cladding layer disposed above said active layer;
a second upper cladding layer disposed above said first upper cladding layer and having a mesa structure;
a high-order mode filter layer formed on both side faces of said second upper cladding layer, continuously extending from said both side faces onto at least a part of a side region on both side regions of said second upper cladding layer and having a band gap not exceeding a band gap of said active layer; and
a block layer formed on said high-order mode filter layer and on the regions of both side regions of said second upper cladding layer, said block layer including a layer having a band gap greater than the band gap of said active layer, wherein said block layer includes an (Al x Ga 1-x ) 0.5 In 5 P layer, wherein 0≦x≦1.0.
5. A semiconductor laser comprising:
a semiconductor substrate;
a lower cladding layer disposed above said semiconductor substrate;
an active layer disposed above said lower cladding layer;
a first upper cladding layer disposed above said active layer;
a second upper cladding layer disposed above said first upper cladding layer and having a mesa structure;
a high-order mode filter layer formed on both side faces of said second upper cladding layer, continuously extending from said both side faces onto at least a part of a side region on both side regions of said second upper cladding layer and having a band gap not exceeding a band gap of said active layer; and
a block layer formed on said high-order mode filter layer and on the regions of both side regions of said second upper cladding layer, said block layer including a layer having a band gap greater than the band gap of said active layer,
wherein said block layer includes an (Al x Ga 1-x ) 0.5 In 5 P layer, wherein 0≦x≦1.0, and a GaAs layer.
6. The semiconductor laser according to claim 5 , wherein
the GaAs layer is formed on the (Al x Ga1−x)0.5In0.5P layer.
7. A semiconductor laser comprising:
a semiconductor substrate;
a lower cladding layer disposed above said semiconductor substrate;
an active layer disposed above said lower cladding layer;
a first upper cladding layer disposed above said active layer;
a second upper cladding layer disposed above said first upper cladding layer and having a mesa structure;
a high-order mode filter layer formed on both side faces of said second upper cladding layer, continuously extending from said both side faces onto at least a part of a side region on both side regions of said second upper cladding layer and having a band gap not exceeding a band gap of said active layer;
a block layer formed on said high-order mode filter layer and on the regions of both side regions of said second upper cladding layer, said block layer including a layer having a band gap greater than the band gap of said active layer;
a first light source and second light source, having different oscillation wavelengths from each other, on said semiconductor substrate,
wherein each of said first light source and second light source has said lower cladding layer, said active layer, said first upper cladding layer, said second upper cladding layer, said high-order mode filter layer and said block layer.
8. The semiconductor laser according to claim 7 , wherein
a material of said second upper cladding layer of said first light source is the same as a material of said second upper cladding layer of said second light source.
9. The semiconductor laser according to claim 7 , wherein
a material of said active layer of said first light source is different from a material of said active layer of said second light source.