Fabrication method of semiconductor device
View Patent ↗A technique with which die bonding can be carried out without forming a void in a bond area is provided. A vacuum supply line that connects to a vacuum chuck hole formed in the bottom face of a vacuuming collet and supplies the vacuuming collet with reduced pressure for vacuum chucking a chip is constructed of two systems. That is, the vacuum supply line is so structured that a first pipe and a second pipe connect to the vacuuming collet. The first pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is unstuck from a dicing tape and transported to a mounting position on a wiring substrate. The second pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is mounted over a wiring substrate. The intensity of the vacuum (suction force) supplied to the vacuuming collet is controlled by opening or closing valves respectively installed in the pipes.
1. A fabrication method of a semiconductor device comprising the steps of:
(a) preparing a semiconductor wafer in which a principal surface thereof is partitioned into a plurality of chip areas by parting areas, an integrated circuit is formed in each of the chip areas, and an adhesive tape is stuck to a rear surface of the semiconductor wafer;
(b) cutting the semiconductor wafer along the parting areas to divide the semiconductor wafer into a plurality of semiconductor chips, and holding the semiconductor chips by the adhesive tape;
(c) horizontally applying a first tension to an adhesive face of the adhesive tape with the semiconductor chips stuck thereto and plunging up a first semiconductor chip of the plurality to be unstuck from the adhesive tape with a plunge-up jig, and vacuuming and holding an upper face of the first semiconductor chip by a first predetermined suction force with a vacuuming collet for the purpose of unsticking the first semiconductor chip from the adhesive tape; and
(d) after the first semiconductor chip unsticks from the adhesive tape, vacuuming and holding the upper face of the first semiconductor chip with the vacuuming collet, and die-bonding a lower face of the first semiconductor chip to a chip mounting area,
wherein, during the die-bonding in the step (d), the vacuuming and holding are performed by a second predetermined suction force smaller than the first predetermined suction force,
wherein a changeover from the first predetermined suction force to the second predetermined suction force is carried out before the die-bonding, and
where the changeover from the first predetermined suction force to the second predetermined suction force is carried out immediately after the first semiconductor chip is transported to the chip mounting area.
2. The fabrication method of a semiconductor device according to claim 1 ,
wherein the first predetermined suction force is a suction force sufficient to unstick the first semiconductor chip from the adhesive tape, and
wherein the second predetermined suction force is sufficient to prevent the first semiconductor chip from dropping from the vacuuming collet.
3. The fabrication method of a semiconductor device according to claim 2 , wherein the thickness of the first semiconductor chip is not more than 100 μm.
4. The fabrication method of a semiconductor device according to claim 3 , wherein the second predetermined suction force is not more than 10 kPa.
5. The fabrication method of a semiconductor device according to claim 3 , wherein the chip mounting area is located over a principal surface of a mounting board or over a different semiconductor chip mounted over the principal surface of the mounting board.
6. The fabrication method of a semiconductor device according to claim 2 , wherein, in the step (d), die-bonding is performed by thermocompression.
7. A method of manufacturing a semiconductor device comprising the steps of:
(a) preparing a semiconductor wafer in which a principal surface thereof is partitioned into a plurality of chip areas by parting areas, an integrated circuit is formed in each of the chip areas, and an adhesive tape is stuck to a rear surface of the semiconductor wafer;
(b) cutting the semiconductor wafer along the parting areas to divide the semiconductor wafer into a plurality of semiconductor chips, and holding the semiconductor chips by the adhesive tape;
(c) horizontally applying a first tension to an adhesive face of the adhesive tape with the semiconductor chips stuck thereto and plunging up a first semiconductor chip of the plurality to be unstuck from the adhesive tape with a plunge-up jig, and vacuuming and holding an upper face of the first semiconductor chip by a first suction force with a vacuuming collet for the purpose of unsticking the first semiconductor chip from the adhesive tape;
(d) at a failure of the unsticking attempt, carrying out the step (c) again under the condition that at least one of the plunging amount and the plunging speed of the plunge-up jig has been changed;
(e) at a failure of the unsticking attempt at the step (d), carrying out the step (c) again under the condition that the first tension has been reduced;
(f) after the first semiconductor chip unsticks from the adhesive tape, vacuuming and holding the upper face of the first semiconductor chip by a second suction force smaller than the first suction force with the vacuuming collet while die-bonding a lower face of the first semiconductor chip to a chip mounting area,
wherein a changeover from the first suction force to the second suction force is carried out before die-bonding the lower face of the first semiconductor chip to the chip mounting area, and
wherein the changeover from the first suction force to the second suction force is carried out immediately after the first semiconductor chip is transported to the chip mounting area.
8. The method of manufacturing a semiconductor device according to claim 7 ,
wherein the first suction force is a suction force sufficient to unstick the first semiconductor chip from the adhesive tape, and
wherein the second suction force is sufficient to prevent the first semiconductor chip from dropping from the vacuuming collet.
9. The method of manufacturing a semiconductor device according to claim 8 , wherein the thickness of the first semiconductor chip is not more than 100 μm.
10. The method of manufacturing a semiconductor device according to claim 9 , wherein the second suction force is not more than 10 kPa.
11. The method of manufacturing a semiconductor device according to claim 9 , wherein the chip mounting area is located over a principal surface of a mounting board or over a different semiconductor chip mounted over the principal surface of the mounting board.
12. The method of manufacturing a semiconductor device according to claim 8 , wherein, in the step (e), die-bonding is performed by thermocompression.
13. The method of manufacturing a semiconductor device according to claim 7 , wherein the thickness of the first semiconductor chip is not more than 100 μm.
14. The method of manufacturing a semiconductor device according to claim 7 , wherein the second suction force is not more than 10 kPa.
15. The method of manufacturing a semiconductor device according to claim 7 , wherein the chip mounting area is located over a principal surface of a mounting board or over a different semiconductor chip mounted over the principal surface of the mounting board.
16. The method of manufacturing a semiconductor device according to claim 7 , wherein, in the step (e), die-bonding is performed by thermocompression.
17. The method of manufacturing a semiconductor device according to claim 7 , wherein the step (d) further includes reducing the first tension.
18. The fabrication method of a semiconductor device according to claim 1 ,
wherein the vacuuming collet is coupled to a first vacuum supply system to supply the first predetermined suction force and is coupled to a second vacuum supply system to supply the second predetermined suction force,
wherein at the step (c), the first vacuum supply system is opened and the second vacuum supply system is closed to supply the first predetermined suction force to the vacuuming collet, and
wherein, for supply of the second predetermined suction force at the step (d), the first vacuum supply system is closed and the second vacuum supply system is opened to supply the second predetermined suction force to the vacuuming collet.
19. The method of manufacturing a semiconductor device according to claim 7 ,
wherein the vacuuming collet is coupled to a first vacuum supply system to supply the first suction force and is coupled to a second vacuum supply system to supply the second suction force,
wherein at the step (c), the first vacuum supply system is opened and the second vacuum supply system is closed to supply the first suction force to the vacuuming collet, and
wherein, for supply of the second suction force at the step (f), the first vacuum supply system is closed and the second vacuum supply system is opened to supply the second suction force to the vacuuming collet.
20. The fabrication method of a semiconductor device according to claim 2 ,
wherein the first predetermined suction force is a suction force sufficient to cause warpage of the first semiconductor chip, and
wherein the second predetermined suction force is sufficiently smaller than the first predetermined suction force to eliminate the warpage.
21. The method of manufacturing a semiconductor device according to claim 8 ,
wherein the first suction force is a suction force sufficient to cause warpage of the first semiconductor chip, and
wherein the second suction force is sufficiently smaller than the first suction force to eliminate the warpage.