Method for manufacturing flexible semiconductor device
View Patent ↗It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.
1. A method for manufacturing a flexible semiconductor device, comprising the steps of:
forming a separation layer over a substrate;
forming a semiconductor element over the separation layer;
forming a resin layer over the semiconductor element;
dissolving the separation layer by using an etchant;
inserting a film into a region where the separation layer is dissolved; and
separating the semiconductor element from the substrate by moving the film in a direction toward a region where the separation layer is not dissolved.
2. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the film comprises polyethylene naphthalate.
3. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the etchant is an alkali solution.
4. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the etchant is a mixture solution containing ammonia and hydrogen peroxide.
5. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the resin layer comprises an ultraviolet curable resin.
6. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the separation layer comprises a metal material.
7. The method for manufacturing a flexible semiconductor device according to claim 1 , wherein the separation layer comprises tungsten.
8. The method for manufacturing a flexible semiconductor device according to claim 1 , further comprising the step of forming a buffer layer over the separation layer, wherein the semiconductor element is formed over the buffer layer.
9. The method for manufacturing a flexible semiconductor device according to claim 8 , wherein the buffer layer comprises an insulating material.
10. A method for manufacturing a flexible semiconductor device, comprising the steps of:
forming a separation layer over a substrate;
forming a semiconductor element over the separation layer;
forming a resin layer over the semiconductor element;
forming a groove in the resin layer by performing laser irradiation so as to surround the semiconductor element;
dissolving the separation layer along the groove by using an etchant;
inserting a film into a region where the separation layer is dissolved; and
separating the semiconductor element from the substrate by moving the film in a direction toward a region where the separation layer is not dissolved.
11. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the film comprises polyethylene naphthalate.
12. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the etchant is an alkali solution.
13. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the etchant is a mixture solution containing ammonia and hydrogen peroxide.
14. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the resin layer comprises an ultraviolet curable resin.
15. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the separation layer comprises a metal material.
16. The method for manufacturing a flexible semiconductor device according to claim 10 , wherein the separation layer comprises tungsten.
17. The method for manufacturing a flexible semiconductor device according to claim 10 , further comprising the step of forming a buffer layer over the separation layer, wherein the semiconductor element is formed over the buffer layer.
18. The method for manufacturing a flexible semiconductor device according to claim 17 , wherein the buffer layer comprises an insulating material.