IP Library Granted Patent US 8,231,934
Granted Patent B2
US 8,231,934 · App. 12/621,729 · Granted Jul 31, 2012

Conductive paste for solar cell electrode

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,231,934
App. No.
12/621,729
Granted
Jul 31, 2012
Kind
B2
Abstract

To obtain low resistance and high adhesion at the same time in a solar cell electrode, a conductive paste is offered. A conductive paste for solar cell electrode contains conductive powder, organic medium and glass frit which is mixture of more than one kind of glass frit such as a mixture of glass frit containing at least PbO and glass frit containing at least Bi2O3.

Claims (11)

1. A method for producing a solar cell electrode comprising steps of:

preparing a p-type silicon substrate having a front side and a back side, wherein a n-type diffusion layer and an anti-reflection coating is formed on the front side of the p-type silicon substrate in this order;

applying a conductive paste on the anti-reflection coating, wherein the conductive paste comprises conductive powder, organic medium, a first glass frit comprising at least PbO and a second glass frit comprising at least Bi 2 O 3 , wherein the first glass frit is 20-80 wt % based on the total weight of the first glass frit and the second glass frit; and

firing the applied conductive paste.

2. A method for producing a solar cell electrode according to claim 1 , wherein the conductive paste is fired at between 700 to 975° C.

3. A method for producing a solar cell electrode according to claim 1 , wherein both the first glass frit and the second glass frit comprise one or more of SiO 2 , Al 2 O 3 and B 2 O 3 .

4. A method for producing a solar cell electrode according to claim 1 , wherein the total content of SiO 2 , Al 2 O 3 and B 2 O in the first glass frit is 11 to 70 wt % and the total content of SiO 2 , Al 2 O 3 and B 2 O in the second glass frit is 11 to 70 wt %.

5. A method for producing a solar cell electrode according to claim 1 , wherein the total amount of the first glass frit and the second glass frit is from 0.5 to 12.0 wt % of the conductive paste.

6. A method for producing a solar cell electrode according to claim 1 , wherein the conductive powder comprises Ag or mixture of Ag and at least one metal selected from the group consisting of Pd, Ir, Cu, Ni, Al, Au, Su, Zn, Pt, Ru, Ti, and Co.

7. A method for producing a solar cell electrode according to claim 1 , wherein the conductive paste comprises metal oxides comprising one or more of metal selected from the group consisting of Zn, Ag, Gd, Ce, Zr, Ti, Mn, Sn, Ru, Co, Fe, Cu and Cr.

8. A method for producing a solar cell electrode according to claim 1 , wherein the silicon wafer has emitter junction depth which is from 0.1 to 0.5 μm.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 30, 2021
From: DUPONT ELECTRONICS, INC.
To: SOLAR PASTE, LLC
Reel/Frame 055766/0478 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2019
From: E. I. DU PONT DE NEMOURS AND COMPANY
To: DUPONT ELECTRONICS, INC.
Reel/Frame 049583/0269 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2009
From: TAKEDA, NORIHIKO; KONNO, TAKUYA
To: E. I. DU PONT DE NEMOURS AND COMPANY
Reel/Frame 023584/0375 →