Power device structures and methods
View Patent ↗Vertical power devices which include an insulated trench containing insulating material and a gate electrode, and related methods. A body region is positioned so that a voltage bias on the gate electrode will cause an inversion layer in the body region. A layer of permanent charge, at or near the sidewall of the trench, provides charge balancing for the space charge in the depleted semiconductor material during the OFF state. A conductive shield layer is positioned below the gate electrode in the insulating material, and reduces capacitive coupling between the gate and the lower part of the trench. This reduces switching losses. In other embodiments, a planar gate electrode controls horizontal carrier injection into the vertical conduction pathway along the trench, while a shield plate lies over the trench itself to reduce capacitive coupling.
1. A method for operating a vertical semiconductor device, comprising:
gating emission of first-type majority carriers from a source region using a control gate;
routing said majority carriers through an induced drain extension in a second-type semiconductor drift region;
said induced drain extension comprising an excess of said first-type carriers along the face of a dielectric trench in contact with said semiconductor drift region, said excess being electrostatically induced by permanent charges; and
reducing capacitance between said control gate and said semiconductor drift region by use of a conductive shield beneath said control gate.
2. A method for operating a vertical semiconductor device, comprising:
gating emission of first-type majority carriers from a source region using a control gate;
routing said majority carriers through an induced drain extension in a second-type semiconductor drift region;
said induced drain extension comprising an excess of said first-type carriers along the face of a dielectric trench in contact with said semiconductor drift region, said excess being electrostatically induced by permanent charges; and
reducing capacitance between said control gate and said semiconductor drift region by use of a conductive shield beneath said control gate;
wherein said permanent charges are cesium ions.
3. The method of claim 1 , wherein the maximum width of said shield is less than the maximum width of said gate.
4. The method of claim 1 , wherein both said shield and said gate lie entirely within said trench, and said gate is wider than said shield.
5. The method of claim 1 , wherein said shield, but not said gate, lies entirely within said trench.
6. The method of claim 1 , wherein said majority carriers are electrons.
7. A method for operating a vertical semiconductor device, comprising:
gating emission of first-type majority carriers from a source region using a control gate;
routing said majority carriers through an induced drain extension in a second-type semiconductor drift region;
said induced drain extension comprising an excess of said first-type carriers along the face of a dielectric trench in contact with said semiconductor drift region, said excess being electrostatically induced by permanent charges; and
reducing capacitance between said control gate and said semiconductor drift region by use of a conductive shield beneath said control gate;
wherein said majority carriers are electrons, and said second conductivity type is p-type.