Patent Assignment
Reel/Frame 062228/0648
Security Interest
Recorded: 2022-12-27
Pages: 15
Assignor
MAXPOWER SEMICONDUCTOR, INC.
Executed: 2022-12-27
Assignee
JPMORGAN CHASE BANK, N.A.
P.O. BOX 6026, ILL-1145/54/63, CHICAGO, ILLINOIS, 60603-6026
Covered Properties
(92)
Lateral High-Voltage Transistor with Vertically-Extended Voltage-Equalized Drift Region
Patent:
7,411,249 →
Application:
11/272,437 →
Oxide-Bypassed Lateral High Voltage Structures and Methods
Patent:
7,473,966 →
Application:
11/272,477 →
Power Mosfet with Recessed Field Plate
Semiconductor Device
Semiconductor Device
Power Mos Transistor Incorporating Fixed Charges That Balance the Charge in the Drift Region
Semiconductor Device
Method of Manufacture for a Semiconductor Device
Lateral High-Voltage Transistor with Vertically-Extended Voltage-Equalized Drift Region
Edge Termination with Improved Breakdown Voltage
Semiconductor Device Structures and Related Processes
Trench Device Structure and Fabrication
Super Self-Aligned Trench Mosfet Devices, Methods, and Systems
Mosfet Switch with Embedded Electrostatic Charge
Edge Termination for Semiconductor Devices
Semiconductor on Insulator Devices Containing Permanent Charge
Lateral Devices Containing Permanent Charge
Devices Containing Permanent Charge
Power Device Structures and Methods
MOS-Gated Power Devices, Methods, and Integrated Circuits
Power Device Structures and Methods Using Empty Space Zones
Patent:
8,319,278 →
Application:
12/720,856 →
Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
Power Semiconductor Device
Power Mosfet and Its Edge Termination
Integrated Power Supplies and Combined High-Side Plus Low-Side Switches
Power Devices, Structures, Components, and Methods Using Lateral Drift, Fixed Net Charge, and Shield
Patent:
8,564,057 →
Application:
12/835,636 →
Devices, Structures, and Methods Using Self-Aligned Resistive Source Extensions
Devices, Components and Methods Combining Trench Field Plates with Immobile Electrostatic Charge
Edge Termination with Improved Breakdown Voltage
Power Mosfet with Embedded Recessed Field Plate and Methods of Fabrication
Devices Containing Permanent Charge
Semiconductor Device Incorporating Charge Balancing
Power Semiconductor Devices, Structures, and Related Methods
Semiconductor Device Structures and Related Processes
Trench Device Structure and Fabrication
Schottky and Mosfet+Schottky Structures, Devices, and Methods
Patent:
8,704,295 →
Application:
13/212,044 →
Semiconductor Device Structures and Related Processes
Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
Power Semiconductor Devices and Methods
Semiconductor Device
Lateral Devices Containing Permanent Charge
Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
MOS-Gated Power Devices, Methods, and Integrated Circuits
Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Lateral Transistors with Low-Voltage-Drop Shunt to Body Diode
Power Semiconductor Devices, Structures, and Related Methods
Method of Manufacture for a Semiconductor Device
Devices, Components and Methods Combining Trench Field Plates with Immobile Electrostatic Charge
Power Devices, Structures, Components, and Methods Using Lateral Drift, Fixed Net Charge, and Shield
Semiconductor Device
Method of Manufacture for a Semiconductor Device
Semiconductor Device
Trench Gated Power Device With Multiple Trench Width and its Fabrication Process
Lateral Devices Containing Permanent Charge
Schottky and Mosfet+Schottky Structures, Devices, and Methods
Vertical Power Mosfet with Planar Channel and Vertical Field Plate
Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
Power Semiconductor Devices, Structures, and Related Methods
Lateral Devices Containing Permanent Charge
Mos-Gated Power Devices, Methods, and Integrated Circuits
Vertical Power Mosfet Having Planar Channel and Its Method of Fabrication
Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Devices, Components and Methods Combining Trench Field Plates with Immobile Electrostatic Charge
Vertical Power Mosfet Having Planar Channel and Its Method of Fabrication
Lateral Devices Containing Permanent Charge
Methods of Operating Power Semiconductor Devices and Structures
Power Devices, Structures, Components, and Methods Using Lateral Drift, Fixed Net Charge, and Shield
Lateral Power Mosfet with Non-Horizontal Resurf Structure
Devices, Components and Methods Combining Trench Field Plates with Immobile Electrostatic Charge
Power Mosfet Having Planar Channel, Vertical Current Path, and Top Drain Electrode
Semiconductor Device with Electric Field Relaxation Portion in Insulating Layer Between Lower and Upper Trench Electrodes
Power Device Having a Polysilicon-Filled Trench with a Tapered Oxide Thickness
Vertical Power Transistor with Thin Bottom Emitter Layer and Dopants Implanted in Trenches in Shield Area and Termination Rings
Lateral Semiconductor Power Devices
Vertical Power Transistor with Deep Floating Termination Regions
Vertical Power Transistor with Dual Buffer Regions
Vertical Power Transistor with Deep Trenches and Deep Regions Surrounding Cell Array
Vertical Power Transistor with Termination Area Having Doped Trenches with Variable Pitches
Vertical Power Transistor Die with Etched Beveled Edges for Increasing Breakdown Voltage
Power Mosfet Having Lateral Channel, Vertical Current Path, and P-Region Under Gate for Increasing Breakdown Voltage
Power Device Having a Polysilicon-Filled Trench with a Tapered Oxide Thickness
Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Vertical Power Mos-Gated Device with High Dopant Concentration N-Well Below P-Well and with Floating P-Islands
Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent Charges
Vertical Rectifier with Added Intermediate Region
Trench Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
Split Gate Power Device and Its Method of Fabrication
Lateral Transistors and Methods with Low-Voltage-Drop Shunt to Body Diode
High Density Power Device with Selectively Shielded Recessed Field Plate
Mosfet with Distributed Doped P-Shield Zones Under Trenches
Related Assignments
(20)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Feb 22, 2008
From: DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 020547/0537 →
Assignment of Assignor's Interest
Feb 22, 2008
From: DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 020548/0728 →
Assignment of Assignor's Interest
Feb 22, 2008
From: DARWISH, MO N.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 020548/0560 →
Assignment of Assignor's Interest
Feb 22, 2008
From: DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 020548/0453 →
Assignment of Assignor's Interest
Apr 28, 2008
From: DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 020868/0722 →
Assignment of Assignor's Interest
Apr 27, 2009
From: ZENG, JUN; DARWISH, MOHAMED N.; SU, SHIH-TZUNG
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 022598/0108 →
Assignment of Assignor's Interest
Jun 11, 2009
From: DARWISH, MOHAMED N
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 022811/0882 →
Assignment of Assignor's Interest
Jun 11, 2009
From: BLANCHARD, RICHARD A; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 022812/0409 →
Assignment of Assignor's Interest
Jun 17, 2009
From: DARWISH, MOHAMED N.; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 022837/0113 →
Assignment of Assignor's Interest
Jun 19, 2009
From: PAUL, AMIT; DARWISH, MOHAMED N.; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 022850/0614 →
Assignment of Assignor's Interest
Jul 26, 2010
From: DARWISH, MOHAMMED N.; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 024743/0152 →
Assignment of Assignor's Interest
Jul 26, 2010
From: DARWISH, MOHAMED N.; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 024743/0163 →
Assignment of Assignor's Interest
Jul 26, 2010
From: ZENG, JUN; DARWISH, MOHAMED N.; SU, SHIH-TZUNG
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 024743/0186 →
Assignment of Assignor's Interest
Jul 26, 2010
From: BLANCHARD, RICHARD A.; ZENG, JUN
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 024742/0026 →
Assignment of Assignor's Interest
Aug 2, 2010
From: PAUL, AMIT; DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 024775/0113 →
Assignment of Assignor's Interest
Jan 19, 2012
From: ZENG, JUN; DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 027559/0606 →
Assignment of Assignor's Interest
Jan 20, 2012
From: DARWISH, MOHAMED; PAUL, AMIT
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 027565/0691 →
Assignment of Assignor's Interest
Apr 16, 2013
From: BLANCHARD, RICHARD A.
To: MAXPOWER SEMICONDUCTOR, INC.
Reel/Frame 030224/0313 →
Assignment of Assignor's Interest
Jul 15, 2015
From: PAUL, AMIT; DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 036101/0258 →
Assignment of Assignor's Interest
Nov 30, 2020
From: DARWISH, MOHAMED N.
To: MAXPOWER SEMICONDUCTOR INC.
Reel/Frame 054494/0792 →