Edge termination with improved breakdown voltage
View Patent ↗A MOSFET switch which has a low surface electric field at an edge termination area, and also has increased breakdown voltage. The MOSFET switch has a new edge termination structure employing an N-P-N sandwich structure. The MOSFET switch also has a polysilicon field plate configuration operative to enhance any spreading of any depletion layer located at an edge of a main PN junction of the N-P-N sandwich structure.
1. A power semiconductor device, comprising:
an active area of one or more power devices which include a first-conductivity-type body which is reverse-biased when the device is OFF; and, adjacent said active area,
a termination zone comprising a sandwich structure, which includes a first-conductivity-type diffusion, together with second-conductivity-type diffusions lying both above and below said first-conductivity-type diffusion.
2. The device of claim 1 , wherein said body is p-type.
3. The device of claim 1 , wherein said first-conductivity-type diffusion in said sandwich structure is an extension of at least part of said body diffusion.
4. The device of claim 1 , wherein said termination zone also includes at least one field plate which is capacitively coupled to at least part of said first-conductivity-type diffusion.
5. A semiconductor switch, comprising:
one or more active device segments having a body junction therein;
an edge termination structure, surrounding one or more of said active device segments, and including a sandwich structure having back-to-back junctions, of which one is approximately coplanar with said body junction; and
multiple trench field plates, successively surrounding said edge termination and each other;
wherein ones of said field plates are embedded in respective trenches, and wherein respective concentrations of a compensating dopant lie beneath said trenches.
6. The switch of claim 5 , wherein said sandwich structure includes a p-type middle layer between n-type layers.
7. The switch of claim 5 , wherein said body junction is less than 0.5 micron deep.
8. The switch of claim 5 , comprising a plurality of said field plates.
9. The switch of claim 5 , wherein an additional field plate, which is not embedded in a trench, also surrounds one or more of said trench field plates.
10. The switch of claim 5 , wherein said active device segments include vertical field-effect transistors.
11. The switch of claim 5 , wherein said active device segments also include recessed field plates intermingled with active devices, and said recessed field plates also have compensating dopant concentrations thereunder.
12. The switch of claim 5 , wherein said active device segments also include recessed field plates intermingled with active devices, and said recessed field plates also have compensating dopant concentrations thereunder; and wherein said recessed field plates in said active device segments have the same characteristics as one or more of said trench field plates.
13. The switch of claim 5 , wherein multiple ones of said trench field plates are electrically floating.
14. The switch of claim 5 , wherein said respective concentrations of a compensating dopant, under multiple ones of said trench field plates, are heavy enough to invert the conductivity type of material thereunder.
15. The switch of claim 5 , wherein said respective concentrations of a compensating dopant, under multiple ones of said trench field plates, are outdiffused far enough to mutually overlap.
16. The switch of claim 5 , further comprising at least one non-trench field plate inboard of said trench field plates.
17. The switch of claim 5 , wherein said active device segments and said termination are constructed in epitaxial semiconductor material.
18. The switch of claim 5 , further comprising a transition zone, between the active device segments and said edge termination structure.
19. The switch of claim 5 , in which n++ dopings are present in said active device segments, but not anywhere outboard of any of said trench field plates.