IP Library Granted Patent US 8,387,464
Granted Patent B2
US 8,387,464 · App. 12/627,679 · Granted Mar 5, 2013

Laterally integrated MEMS sensor device with multi-stimulus sensing

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Quick Facts
Patent No.
US 8,387,464
App. No.
12/627,679
Granted
Mar 5, 2013
Kind
B2
Abstract

A microelectromechanical systems (MEMS) sensor device ( 20 ) includes a substrate ( 22 ) having sensors ( 24, 26 ) disposed on the same side ( 28 ) of the substrate ( 22 ) and laterally spaced apart from one another. The sensor ( 26 ) includes a sense element ( 56 ), and the substrate ( 22 ) includes a cavity ( 58 ) extending through the substrate ( 22 ) from the backside ( 30 ) of the substrate ( 22 ) to expose the sense element ( 56 ) to an external environment ( 54 ). The sense element ( 56 ) is movable in response to a stimulus ( 52 ) from the environment ( 54 ) due to its exposure to the environment ( 54 ) via the cavity ( 58 ). Fabrication methodology ( 66 ) entails concurrently forming the sensors ( 24, 26 ) on substrate ( 22 ) by implementing MEMS process flow, followed by creating the cavity ( 58 ) through the substrate ( 22 ) to expose the sense element ( 56 ) to the environment ( 54 ).

Claims (43)

1. A microelectromechanical systems (MEMS) sensor device comprising:

a substrate having a first side and a second side that opposes said first side;

a first sensor disposed on said first side of said substrate at a first location;

a second sensor disposed on said first side of said substrate at a second location, said second sensor including a sense element, and said substrate including a cavity at said second location and extending through said substrate from said second side to expose said sense element to an environment external to said MEMS sensor device; and

a cap coupled with said first side of said substrate to form a hermetically sealed chamber in which both of said first sensor and said second sensor are located.

2. A MEMS sensor device as claimed in claim 1 wherein said second sensor comprises a pressure sensor, and said sense element is a diaphragm that is movable in response to a pressure stimulus from said environment.

3. A MEMS sensor device as claimed in claim 2 wherein said first sensor comprises an inertial sensor configured to sense a motion stimulus.

4. A MEMS sensor device as claimed in claim 1 wherein:

said hermetically sealed chamber exhibits a chamber pressure that is variable in response to an ambient temperature and said pressure stimulus;

said second sensor is a pressure sensor and said sense element is a diaphragm that is moveable in response to said pressure stimulus to produce a pressure output signal; and

said MEMS sensor device further comprises a correction circuit in communication with said pressure sensor for receiving said pressure output signal and producing a corrected pressure signal to compensate for an error signal component in said pressure output signal.

5. A MEMS sensor device as claimed in claim 1 wherein:

said sense element is configured to move in a direction perpendicular to said first side of said substrate; and

said second sensor further includes an over-travel stop structure spaced apart from said first side and overlying said sense element, said over-travel stop structure being adapted to limit movement of said sense element in said direction perpendicular to said first side of said substrate.

6. A MEMS sensor device as claimed in claim 1 wherein:

said sense element is configured to move in a direction perpendicular to said first side of said substrate; and

said second sensor further includes a reference element spaced apart from said first side and overlying said sense element, said second sensor being adapted to sense a physical stimulus from said environment as movement of said sense element relative to said reference element in said direction.

7. A MEMS sensor device as claimed in claim 6 wherein said reference element comprises an over-travel stop adapted to limit movement of said sense element in said direction perpendicular to said first side of said substrate.

8. A MEMS sensor device as claimed in claim 6 further comprising a support interposed between said reference element and said sense element and coupled to each of said reference element and said sense element.

9. A MEMS sensor device as claimed in claim 6 wherein said first sensor comprises a movable element in movable communication with said first side of said substrate, said reference element and said movable element being concurrently formed from a common material layer.

10. A MEMS sensor device as claimed in claim 1 wherein said first sensor comprises an electrode element disposed on said first side of said substrate at said first location, said sense element and said electrode element being concurrently formed on said first side from a common material layer.

11. A MEMS sensor device as claimed in claim 1 wherein each of said first and second sensors is a capacitive sensor.

12. A method of producing a microelectromechanical systems (MEMS) sensor device comprising:

concurrently forming an electrode element and a sense element from a first material layer on a first side of a substrate, said electrode element positioned at a first location on said first side and said sense element laterally spaced apart from said electrode element and positioned at a second location on said first side;

concurrently forming a movable element and a reference element spaced apart from said first side of said substrate, said movable element and said reference element being formed from a second material layer, said movable element functioning cooperatively with said electrode element to produce a first sensor, and said reference element overlying said sense element to produce a second sensor; and

creating a cavity at said second location extending through said substrate from a second side of said substrate to expose said sense element to an environment external to said sensor system.

13. A method as claimed in claim 12 wherein:

said forming said electrode element and said sense element include depositing said first material layer over said first side of said substrate and selectively etching said first material layer to produce said electrode element and said sense element; and

said forming said movable element and said reference element includes depositing a sacrificial layer over said electrode element and said sense element, selectively etching said sacrificial layer, depositing said second material layer over said sacrificial layer, selectively etching said second material layer to produce said movable element and said reference element, and removing said sacrificial layer to form respective first and second sensors.

14. A method as claimed in claim 12 further comprising coupling a cap to said first side of said substrate to form a hermetically sealed chamber in which both of said first sensor and said second sensor are located.

15. A method as claimed in claim 14 wherein:

said first sensor comprises an inertial sensor and said movable element moves relative to said electrode element in response to a motion stimulus; and

said second sensor comprises a pressure sensor and said sense element moves relative to said reference element in response to a pressure stimulus from said environment.

16. A microelectromechanical systems (MEMS) sensor device comprising:

a substrate having a first side and a second side that opposes said first side;

a first sensor disposed on said first side at a first location;

a second sensor disposed on said first side at a second location, said second sensor comprising a pressure sensor having a diaphragm, and said substrate including a cavity at said second location, said cavity extending through said substrate from said second side to expose said diaphragm to an environment external to said MEMS sensor device, and said diaphragm being movable in response to a pressure stimulus from said environment; and

a cap coupled with said first side of said substrate to form a hermetically sealed chamber in which both of said first sensor and said pressure sensor are located.

17. A MEMS sensor device as claimed in claim 16 wherein:

said diaphragm is configured to move in a direction perpendicular to said first side of said substrate; and

said pressure sensor further includes a reference element spaced apart from said first side and overlying said diaphragm, said pressure sensor being adapted to sense said pressure stimulus from said environment as movement of said diaphragm relative to said reference element in said direction.

18. A MEMS sensor device as claimed in claim 17 wherein said first sensor comprises a movable element in movable communication with said first side of said substrate, said reference element and said movable element being concurrently formed from a common material layer.

19. A MEMS sensor device as claimed in claim 16 wherein said first sensor comprises an electrode element disposed on said first side of said substrate at said first location, said diaphragm and said electrode element being concurrently formed on said first side from a common material layer.

Assignments (27)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051145/0184 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040652 FRAME: 0241. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Jan 5, 2017
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 041260/0850 →
MERGER Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040652/0241 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12092129 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Jul 14, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039361/0212 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 038017/0058 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037355/0723 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Mar 15, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 30, 2009
From: MCNEIL, ANDREW C.; LIN, YIZHEN; PARK, WOO TAE
To: FREESCALE SEMICONDUCTOR, INC.
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