Soluble, persistent nonacene derivatives
The present invention is directed towards a new class of semi-conducting nonacene derivatives. These compounds are all soluble species and they all possess superior resistance to oxidation as compared to their counterparts that lack the substitution patterns disclosed herein.
1. A oxidatively resistant nonacene composition selected from the group consisting of:
wherein R is selected from the group consisting of hydrogen, alkyl moieties, the nitrile group, the isonitrile group, carbonyl moieties, alkene moieties, alkyne moieties, trialkylsilylethynyl moieties, aromatic moieties, the trifluoromethyl group, other perfluoroalkyl moieties, halogens, alkylthio moieties, and arylthio moieties and wherein the resulting structure has a zero or approximately zero total spin, <S 2 >, as calculated by density functional theory.
2. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
3. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
4. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
5. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
6. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
7. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
8. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
9. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
10. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
11. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
12. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
13. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
14. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
15. The composition of claim 1 , wherein said oxidatively resistant nonacene is:
16. An electronic device comprising an oxidativley resistant nonacene selected from one or more of the group consisting of:
wherein R is selected from the group consisting of hydrogen, alkyl moieties, the nitrile group, the isonitrile group, carbonyl moieties, alkene moieties, alkyne moieties, trialkylsilylethynyl moieties, aromatic moieties, the trifluoromethyl group, other perfluoroalkyl moieties, halogens, alkylthio moieties, and arylthio moieties and wherein the resulting structure has a zero or approximately zero total spin, <S 2 >, as calculated by density functional theory.
17. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
18. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
19. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
20. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
21. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
22. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
23. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
24. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
25. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
26. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
27. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
28. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
29. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is:
30. The electronic device of claim 16 , wherein said oxidatively resistant nonacene is: