Native green laser semiconductor devices

1. A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range, the semiconductor laser device comprising a pumping source and a laser structure further comprising a substrate, a first cladding layer comprising one or more GaN layers, AlGaN layers, AlInGaN layers, or combinations thereof, and one or more active region layers comprising a plurality of InGaN quantum well layers and a plurality of quantum well barrier layers comprising GaN, InGaN or combinations thereof positioned between the InGaN quantum well layers, and at least two waveguide layers comprising one or more GaN layers or one or more InGaN layers, the InGaN layers having a lower concentration of In than the quantum well layers, with the one or more active layers positioned between the waveguide layers, wherein:

the first cladding layer is positioned on the substrate, and the one or more active region layers are positioned above the first cladding layer;

the one or more active region layers comprise a number of quantum wells having a spontaneous emission peak wavelength that is greater than about 520 nm at a reference pumping power density;

the laser structure further comprises a net optical loss coefficient of light propagating in a waveguide mode within the laser structure;

the pumping source is configured to pump each quantum well at a pumping power density such that a stimulated emission peak of each quantum well is within the green spectral range; and

the number of quantum wells within the one or more active region layers are such that a net optical gain of the quantum wells is greater than the net optical loss coefficient of the semiconductor laser device at the desired wavelength in the green spectral range.

2. The semiconductor laser device of claim 1 , wherein the one or more active region layers comprise three or more quantum wells.

3. The semiconductor laser device of claim 1 , wherein the net optical loss coefficient is less than about 20 cm-1 and the laser structure further comprises high reflectivity coatings.

4. The semiconductor laser device of claim 3 , wherein a surface plane of the substrate has a c-plane {0001} orientation.

5. The semiconductor laser device of claim 4 , wherein the laser structure comprises a cleaved facet along the {1-100} crystallographic plane of the laser structure.

6. The semiconductor laser device of claim 3 , wherein the pumping source comprises an optical pumping source operable to emit optical radiation into the pumping stripe to optically pump the laser structure such that the laser structure emits output radiation at the desired wavelength in the green spectral range.

7. The semiconductor laser device of claim 6 , wherein the first cladding layer and the one or more active region layers comprise undoped material.

8. The semiconductor laser device of claim 6 , wherein the optical pumping source comprises a semiconductor laser device.

9. The semiconductor laser device of claim 8 , wherein:

semiconductor laser device further comprises an index guiding structure; and

the laser structure comprises a cavity length of less than about 0.5 mm.

10. The semiconductor laser device of claim 6 , wherein:

the semiconductor laser device further comprises a pumping stripe oriented along the [1-100] direction of the laser structure and at least two cleaved facets; and

the one or more active region layers comprises three or more quantum wells.

11. The semiconductor laser device of claim 10 , wherein a surface plane of the substrate has a semipolar {11-22} orientation.

12. The semiconductor laser device of claim 3 , wherein the pumping source comprises an electrical pumping source comprising a p-n junction operable to inject current into the one or more active region layers through the pumping stripe.

13. The semiconductor laser device of claim 12 , wherein the waveguide and cladding layers comprise a doping impurity of Mg at a concentration such that the net optical loss coefficient is less than about 20 cm −1 .

14. The semiconductor laser device of claim 12 , wherein the one or more active region layers comprise three or more quantum wells.

15. The semiconductor laser device of claim 14 , wherein:

the one or more active region layer comprises a plurality of InGaN quantum well layers and a plurality of InGaN quantum well barrier layers positioned between the InGaN quantum well layers; and

the quantum well barriers comprise an average In concentration of about 3% to about 10%.

16. The semiconductor laser device of claim 14 , wherein the width of the InGaN quantum well barrier layers is less than 6 nm.

17. The semiconductor laser device of claim 12 , wherein the laser structure further comprises a second cladding layer.

18. The semiconductor laser device of claim 3 , wherein:

the laser structure further comprises one or more transparent layers transparent at the desired wavelength; and

the one or more transparent layers comprise one or more of the following: TiO 2 , HfO 2 , SiO 2 , Al2O 3 , Si x N y , ITO, tin-oxide, and combinations thereof.

19. The semiconductor laser of claim 1 wherein:

the substrate comprises a semipolar crystal orientation;

the laser structure further comprises a pumping stripe oriented along a highest differential gain direction of the laser structure; and

the laser structure further comprises a dry etch facet normal to the pumping stripe orientation.

20. The semiconductor laser claim 1 wherein:

the substrate comprises a semipolar crystal orientation;

the laser structure further comprises a pumping stripe oriented along a lowest differential gain direction of the laser structure; and

the laser structure further comprises a cleaved facet normal to the pumping stripe orientation.

21. The semiconductor laser device of claim 20 , wherein:

the substrate comprises a semipolar {11-22} GaN substrate;

the cleaved facet is along the {1-100} crystallographic plane of the laser structure; and

the laser structure further comprises a pumping stripe oriented along the [1-100] direction of the laser structure.

22. The semiconductor laser device of claim 1 , wherein the reference pumping power density is approximately 1 kW/cm 2 .

23. A semiconductor laser device operable to emit light having a desired wavelength in the green spectral range, the semiconductor laser device comprising an optical pumping source and a laser structure further comprising a substrate, a first cladding layer, one or more active region layers, and at least two waveguide layers, wherein:

the first cladding layer is positioned on the substrate, and the one or more active region layers and the at least two waveguide layers are positioned on the first cladding layer such that the one or more active region layers are positioned between the two waveguide layers;

the laser structure comprises a cleaved facet along the {1-100} crystallographic plane of the laser structure and a pumping stripe along the [1-100] direction;

the cleaved facet comprises a high reflectivity coating;

the laser structure further comprises a net optical loss coefficient of light propagating in a waveguide mode defined by the active region, waveguide and cladding layers;

the one or more active region layers comprises three or more quantum wells such that a net optical gain of the quantum wells is greater than the net optical loss coefficient of the semiconductor laser device at the desired wavelength in the green spectral range; and

the optical pumping source is operable to emit optical radiation into the pumping stripe to optically pump each quantum well at a pumping power density such that a stimulated emission of each quantum well is within the green spectral range.