IP Library Assignment 034408/0556
Patent Assignment
Reel/Frame 034408/0556

Assignment of Assignor's Interest

Recorded: 2014-11-21 Pages: 22
Assignor
CORNING INCORPORATED
Executed: 2014-10-24
Assignee
THORLABS QUANTUM ELECTRONICS, INC.
10335 GUILFORD ROAD, JESSUP, MARYLAND, 20794
Covered Properties (48)
Semiconductor Laser with Kink Suppression Layer
Patent: 6,141,365 →
Application: 09/002,151 →
Polyimide/Silicon Oxide Bi-Layer for Bond Pad Parasitic Capacitance Control in Semiconductor Electro-Optical Device
Patent: 6,365,968 →
Application: 09/130,742 →
Buried Ridge Semiconductor Laser with Aluminum-Free Confinement Layer
Patent: 6,304,587 →
Application: 09/333,165 →
Mode-Selective Facet Layer for Pump Laser
Patent: 6,647,046 →
Application: 09/448,046 →
Passivation of Semiconductor Laser Facets
Patent: 6,618,409 →
Application: 09/564,015 →
Semiconductor Laser with Kink Suppression Layer
Patent: 6,366,595 →
Application: 09/597,597 →
Bar Tester
Patent: 6,501,260 →
Application: 09/738,108 →
Publication: US 2003/0011357
Tunable Laser Device for Avoiding Optical Mode Hops
Patent: 6,650,675 →
Application: 10/037,458 →
Publication: US 2003/0091086
Distributed Feedback Laser for Isolator-Free Operation
Patent: 6,891,870 →
Application: 10/037,461 →
Publication: US 2003/0091081
Semiconductor Laser Element Having a Diverging Region
Patent: 6,826,220 →
Application: 10/168,838 →
Publication: US 2003/0031222
Semiconductor Array Tester
Patent: 7,256,879 →
Application: 10/733,903 →
Publication: US 2005/0128469
Tunnel Junctions for Long-Wavelength Vcsels
Patent: 6,933,539 →
Application: 10/848,456 →
Method of Manufacturing an Inp Based Vertical Cavity Surface Emitting Laser and Device Produced Therefrom
Patent: 7,072,376 →
Application: 10/944,649 →
Publication: US 2006/0056475
Tunnel Junctions for Long-Wavelength Vcsels
Patent: 6,982,439 →
Application: 11/130,947 →
Publication: US 2005/0253164
Methods of Fabricating Metal Contact Structures for Laser Diodes Using Backside Uv Exposure
Patent: 7,833,695 →
Application: 11/809,117 →
Publication: US 2008/0299495
Gan Lasers on Aln Substrates and Methods of Fabrication
Patent: 7,615,389 →
Application: 11/893,188 →
Publication: US 2008/0299691
Laser Source with Interdigital Heater Electrodes and Underlying Current Confinement Layer
Patent: 7,567,595 →
Application: 11/906,213 →
Publication: US 2009/0086775
Quantum Well Intermixing
Patent: 7,723,139 →
Application: 11/906,247 →
Publication: US 2009/0086784
Semiconductor Buried Grating Fabrication Method
Patent: 7,981,591 →
Application: 12/079,524 →
Publication: US 2009/0246707
Mqw Laser Structure Comprising Plural Mqw Regions
Patent: 7,983,317 →
Application: 12/336,050 →
Publication: US 2010/0150193
Methods and Devices for Evaluating the Operating Characteristics of a Dbr Laser Diode
Patent: 8,103,468 →
Application: 12/414,940 →
Publication: US 2010/0250166
Split Control of Front and Rear Dbr Grating Portions
Patent: 8,121,169 →
Application: 12/423,222 →
Publication: US 2010/0260215
Fracture Resistant Metallization Pattern for Semiconductor Lasers
Patent: 8,391,330 →
Application: 12/426,563 →
Publication: US 2010/0265982
Native Green Laser Semiconductor Devices
Patent: 7,965,752 →
Application: 12/627,814 →
Publication: US 2011/0128984
Growth Methodology for Light Emitting Semiconductor Devices
Patent: 8,318,515 →
Application: 12/633,216 →
Publication: US 2011/0136280
Laser Diodes Comprising Qwi Output Window and Waveguide Areas and Methods of Manufacture
Patent: 8,198,112 →
Application: 12/760,092 →
Publication: US 2011/0255567
Gan-Based Laser Diodes with Misfit Dislocations Displaced from the Active Region
Patent: 8,189,639 →
Application: 12/789,936 →
Publication: US 2011/0292957
Enhanced Planarity in Gan Edge Emitting Lasers
Patent: 8,218,595 →
Application: 12/789,956 →
Publication: US 2011/0292958
Group Iii Nitride-Based Green-Laser Diodes and Waveguide Structures Thereof
Patent: 8,897,329 →
Application: 12/885,951 →
Publication: US 2012/0069863
Strain Balanced Laser Diode
Patent: 8,358,673 →
Application: 13/029,723 →
Publication: US 2012/0213240
P-Type Isolation Between Qcl Regions
Patent: 8,514,902 →
Application: 13/050,026 →
Publication: US 2012/0236889
P-Type Isolation Regions Adjacent to Semiconductor Laser Facets
Patent: 9,917,421 →
Application: 13/050,058 →
Publication: US 2012/0236890
Mqw Laser Structure Comprising Plural Mqw Regions
Patent: 8,121,165 →
Application: 13/161,962 →
Publication: US 2011/0243173
Hole Blocking Layers in Non-Polar and Semi-Polar Green Light Emitting Devices
Patent: 8,379,684 →
Application: 13/210,456 →
Publication: US 2013/0044783
Heating Elements For Multi-Wavelength DBR Laser
Patent: 9,172,211 →
Application: 13/292,385 →
Publication: US 2013/0114635
Dbr Laser Diode with Symmetric Aperiodically Shifted Grating Phase
Patent: 8,705,584 →
Application: 13/292,433 →
Publication: US 2013/0114636
DBR Laser Diode With Periodically Modulated Grating Phase
Application: 13/292,479 →
Publication: US 2013/0114634
Laser Characterization System and Process
Patent: 8,670,109 →
Application: 13/303,648 →
Publication: US 2012/0268743
Laser Diodes Including Substrates Having Semipolar Surface Plane Orientations and Nonpolar Cleaved Facets
Application: 13/485,385 →
Publication: US 2013/0322481
Enhanced Planarity in Gan Edge Emitting Lasers
Patent: 8,355,422 →
Application: 13/493,355 →
Publication: US 2012/0244654
Quantum Cascade Laser Design With Stepped Well Active Region
Patent: 9,548,590 →
Application: 13/661,559 →
Publication: US 2013/0136148
Surface Emitting Multiwavelength Distributed-Feedback Concentric Ring Lasers
Application: 13/772,694 →
Publication: US 2013/0221223
Waveguide Structure for Mid-Ir Multiwavelength Concatenated Distributed-Feedback Laser with an Active Core Made of Cascaded Stages
Patent: 9,547,124 →
Application: 13/799,592 →
Publication: US 2013/0240737
Semiconductor Lasers with Indium Containing Cladding Layers
Application: 14/000,973 →
Publication: US 2013/0329760
Lift-Off Processing for Formation of Isolation Regions in Laser Diode Structures
Application: 14/119,607 →
Publication: US 2014/0079087
Tunable Semiconductor Radiation Source
Application: 61/910,322 →
Quantum Cascade Devices Having an Active Region Beginning with Two or More Thin Wells
Application: 61/910,342 →
Passive Waveguide Structure with Alternating Gainas/Alinas Layers for Mid-Infrared Optoelectronic Devices
Application: 61/946,700 →
Related Assignments (17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Apr 27, 1998
From: BOWLER, DENNIS P.
To: LASERTRON
Reel/Frame 009149/0085 →
Assignment of Assignor's Interest Oct 2, 1998
From: QIAN, YI; LU, HANH; SAHARA, RICHARD
To: LASERTRON, INC.
Reel/Frame 009513/0972 →
Assignment of Assignor's Interest Sep 2, 1999
From: ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 010256/0098 →
Assignment of Assignor's Interest Jan 24, 2000
From: SALVATORE, RANDAL A.
To: LASERTRON INCORPORATED
Reel/Frame 010561/0248 →
Assignment of Assignor's Interest May 3, 2000
From: HU, MARTIN (HAI); KINNEY, LYLE D.; ONYIRIUKA, EMMANNUEL C.; OUYANG, MIKE X.
To: CORNING INCORPORATED
Reel/Frame 010781/0197 →
Assignment of Assignor's Interest Dec 15, 2000
From: HU, MARTIN; LEBLANC, HERVE P.; WATERS, RONALD L.; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 011417/0401 →
Change of Name Jun 18, 2001
From: LASERTRON, INC.
To: CORNING LASERTRON, INC.
Reel/Frame 011898/0466 →
Assignment of Assignor's Interest May 24, 2002
From: SAHARA, RICHARD T.; HOHL-ABICHEDID, ANGELA; LU, HANH
To: CORNING LASERTRON INCORPORATED
Reel/Frame 012922/0718 →
Assignment of Assignor's Interest May 24, 2002
From: SAHARA, RICHARD T.; SALVATORE, RANDAL A.; LU, HANH
To: CORNING LASERTRON INCORPORATED
Reel/Frame 012922/0762 →
Assignment of Assignor's Interest Dec 11, 2003
From: HALL, BENJAMIN L.; HU, MARTIN H.; WHITE, MIKE J.; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 014796/0008 →
Assignment of Assignor's Interest May 17, 2004
From: BHAT, RAJARAM; NISHIYAMA, NOHUHIKO
To: CORNING INCORPORATED
Reel/Frame 015359/0811 →
Assignment of Assignor's Interest Sep 16, 2004
From: CANEAU, CATHERINE G; HALL, BENJAMIN L; NISHIYAMA, NOBUHIKO; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 015813/0122 →
Assignment of Assignor's Interest May 31, 2007
From: XI, JINGQUN; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 019423/0482 →
Assignment of Assignor's Interest Aug 15, 2007
From: BHAT, RAJARAM; NAPIERALA, JEROME; SIZOV, DMITRY; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 019752/0379 →
Assignment of Assignor's Interest Oct 1, 2007
From: LI, YABO; SONG, KECHANG; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 019967/0514 →
Assignment of Assignor's Interest Oct 1, 2007
From: HU, MARTIN HAI; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 019967/0117 →
Assignment of Assignor's Interest Mar 27, 2008
From: LI, YABO; SONG, KECHANG; VISOVSKY, NICHOLAS JOHN; ZAH, CHUNG-EN
To: CORNING INCORPORATED
Reel/Frame 020765/0860 →