Hole blocking layers in non-polar and semi-polar green light emitting devices

1. A light emitting device comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device, wherein:

the light emitting device is a laser diode;

the n-type and p-type sides of the device comprise group III nitride (III-N) semiconductor compounds;

the active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum;

the n-type side of the light emitting device comprises an n-doped semiconductor region;

the p-type side of the light emitting device comprises a p-doped semiconductor region;

the n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate;

the hole blocking layer (HBL) comprises an n-doped semiconductor material and is interposed between the non-polar or semi-polar substrate and the active region;

the n-doped semiconductor region of the laser diode comprises an n-doped waveguide layer interposed between the non-polar or semi-polar substrate and the n-doped hole blocking layer;

the n-doped semiconductor region of the laser diode further comprises an n-doped cladding layer interposed between the n-doped waveguide layer and the non-polar or semi-polar substrate;

the active region, waveguide layer, and cladding layer are formed as a multi-layered laser diode over the non-polar or semi-polar crystal growth plane of the non-polar or semi-polar substrate such that the waveguide layer guides the stimulated emission of photons from the active region, and the cladding layer promotes propagation of the emitted photons in the waveguide layer;

the active MQW structure of the active region comprises a plurality of nanometer scale quantum wells in alternating succession with a plurality of quantum well barrier layers; and

the HBL composition is characterized by a wider bandgap than that of the quantum well barrier layers.

2. A light emitting device as claimed in claim 1 wherein:

the n-doped HBL is characterized by a dopant density between approximately 3×10 17 cm −3 and approximately 1×10 19 cm −3 ; and

the n-doped semiconductor region is characterized by an average dopant density between approximately 3×10 17 cm −3 and approximately 3×10 18 cm −3 .

3. A light emitting device as claimed in claim 1 wherein:

the n-doped HBL is characterized by a dopant density less than approximately 1×10 20 cm −3 ; and

the n-doped semiconductor region is characterized by an average dopant density less than approximately 1×10 19 cm −3 .

4. A light emitting device as claimed in claim 1 wherein a defect density of the n-doped semiconductor region is between approximately 1×10 2 cm −2 and approximately 1×10 6 cm −2 for threading dislocations and below approximately 2×10 6 cm −1 for in-plane misfit dislocations.

5. A light emitting device as claimed in claim 1 wherein a defect density of the n-doped waveguide layer for in-plane misfit dislocations is at least twice the magnitude of a defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure for in-plane misfit dislocations.

6. A light emitting device as claimed in claim 1 wherein a defect density of the n-doped waveguide layer for in-plane misfit dislocations is at least one order of magnitude greater than a defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure for in-plane misfit dislocations.

7. A light emitting device as claimed in claim 1 wherein:

the p-doped semiconductor region of the laser diode comprises a p-doped waveguide layer interposed between a p-doped cladding layer and the active region; and

the laser diode further comprises an electron blocking layer interposed between the p-doped waveguide layer and the active region.

8. A light emitting device as claimed in claim 1 wherein the substrate is a non-polar substrate.

9. A light emitting device as claimed in claim 1 wherein the substrate is a semi-polar substrate.

10. A light emitting device as claimed in claim 1 wherein the substrate is a semi-polar substrate characterized by (11-22), (20-21), or (20-2-1) semi-polar plane orientation.

11. A light emitting device as claimed in claim 1 wherein the HBL comprises AlGaN having an AlN mole fraction between approximately 10% and approximately 30%.

12. A light emitting device as claimed in claim 1 wherein:

the active MQW structure comprises In and is disposed to introduce compressive strain in the light emitting device; and

the HBL comprises a sufficient amount of Al to at least partially compensate for the strain introduced by the MQW structure.

13. A light emitting device comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device, wherein:

the n-type and p-type sides of the device comprise group III nitride (III-N) semiconductor compounds;

the active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum;

the n-type side of the light emitting device comprises an n-doped semiconductor region;

the p-type side of the light emitting device comprises a p-doped semiconductor region;

the n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate;

the hole blocking layer (HBL) comprises an n-doped semiconductor material and is interposed between the non-polar or semi-polar substrate and the active region;

the active MQW structure of the active region comprises a plurality of nanometer scale quantum wells in alternating succession with a plurality of quantum well barrier layers;

the HBL composition is characterized by a wider bandgap than that of the quantum well barrier layers;

a defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure, is below approximately 1×10 6 cm −2 for threading dislocations and below approximately 1×10 3 cm −1 for in-plane misfit dislocations; and

a defect density of the n-doped semiconductor region for in-plane misfit dislocations is greater than the defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure for in-plane misfit dislocations.

14. A light emitting device as claimed in claim 13 wherein the defect density of the n-doped semiconductor region for in-plane misfit dislocations is at least twice the magnitude of the defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure for in-plane misfit dislocations.

15. A light emitting device as claimed in claim 13 wherein the defect density of the n-doped semiconductor region for in-plane misfit dislocations is at least one order of magnitude greater than the defect density of the HBL, the active MQW structure, and any regions between the HBL and the active MQW structure for in-plane misfit dislocations.

16. A light emitting device as claimed in claim 13 wherein the light emitting device is a light emitting diode (LED).

17. A light emitting device comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device, wherein:

the n-type and p-type sides of the device comprise group III nitride (III-N) semiconductor compounds;

the active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum;

the n-type side of the light emitting device comprises an n-doped semiconductor region;

the p-type side of the light emitting device comprises a p-doped semiconductor region;

the n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate;

the hole blocking layer (HBL) comprises an n-doped semiconductor material and is interposed between the non-polar or semi-polar substrate and the active region;

the active MQW structure of the active region comprises a plurality of nanometer scale quantum wells in alternating succession with a plurality of quantum well barrier layers;

the HBL composition is characterized by a wider bandgap than that of the quantum well barrier layers;

the light emitting device is a laser diode;

the n-doped semiconductor region of the light emitting device comprises an n-doped waveguide layer interposed between an n-doped substrate and the n-doped hole blocking layer; and

a defect density of the n-doped waveguide layer or any transition layer between the n-doped waveguide layer and the HBL is between approximately 1×10 2 cm −2 and approximately 1×10 6 cm −2 for threading dislocations and between approximately 1×10 4 cm −1 and approximately 2×10 6 cm −1 for in-plane misfit dislocations.

18. A light emitting device comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device, wherein:

the n-type and p-type sides of the device comprise group III nitride (III-N) semiconductor compounds;

the active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum;

the n-type side of the light emitting device comprises an n-doped semiconductor region;

the p-type side of the light emitting device comprises a p-doped semiconductor region;

the n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate;

the hole blocking layer (HBL) comprises an n-doped semiconductor material and is interposed between the non-polar or semi-polar substrate and the active region;

the active MQW structure of the active region comprises a plurality of nanometer scale quantum wells in alternating succession with a plurality of quantum well barrier layers;

the HBL composition is characterized by a wider bandgap than that of the quantum well barrier layers;

the HBL comprises a transitional hole blocking region and a native hole blocking region;

the transitional hole blocking region of the HBL is positioned closer to the n-doped semiconductor region than the native hole blocking region;

the transitional hole blocking region comprises a compositional component selected to match a compositional component of the n-doped semiconductor region; and

the compositional component is present in the transitional hole blocking region to a significantly greater extent than in the native hole blocking region.

19. A light emitting device as claimed in claim 18 wherein:

the n-doped waveguide layer comprises InGaN;

the native hole blocking region comprises AlGaN; and

the transitional hole blocking region comprises AlInGaN to help ensure proper growth of the HBL and improve the operational integrity of the light emitting device.

20. A light emitting device comprising an active region interposed between n-type and p-type sides of the device and a hole blocking layer interposed between the active region and the n-type side of the device, wherein:

the active region comprises an active MQW structure and is configured for electrically-pumped stimulated emission of photons in the green portion of the optical spectrum;

the n-type side of the light emitting device comprises an n-doped semiconductor region;

the p-type side of the light emitting device comprises a p-doped semiconductor region;

the n-doped semiconductor region comprises an n-doped non-polar or n-doped semi-polar substrate;

the hole blocking layer (HBL) comprises an n-doped semiconductor material and is interposed between the non-polar or semi-polar substrate and the active region;

a defect density of the HBL is below approximately 1×10 6 cm −2 for threading dislocations and below approximately 1×10 3 cm −1 for in-plane misfit dislocations

a defect density of the n-doped semiconductor region is between approximately 1×10 2 cm −2 and approximately 1×10 6 cm −2 for threading dislocations and below approximately 2×10 6 cm −1 for in-plane misfit dislocations;

the n-doped HBL is characterized by a dopant density between approximately 3×10 17 cm −3 and approximately 1×10 19 cm −3 ;

the n-doped semiconductor region is characterized by an average dopant density between approximately 3×10 17 cm −3 and approximately 3×10 18 cm −3 .