Apparatus and method of manufacture for depositing a composite anti-reflection layer on a silicon surface

1. An apparatus, comprising:

a first silicon layer having at least one of an associated passivation layer and barrier;

a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index, the composite anti-reflection layer disposed adjacent to the first silicon layer; and

a second silicon layer disposed adjacent to the composite anti-reflection layer opposite the first silicon layer;

wherein the first silicon layer, the composite anti-reflection layer, and the second silicon layer are components of a starting material that is adapted for use in the manufacture of an imager;

wherein the apparatus is operable such that imager pixels and circuits are deposited on the first silicon layer using the starting material during the manufacturing of the imager;

wherein the apparatus is operable such that inter-layer dielectrics and metals are deposited on the imager pixels and the circuits during the manufacturing of the imager to generate a structure;

wherein during the manufacturing of the imager, the apparatus is operable such that the structure is deposited on a support substrate and the second silicon layer is etched off, wherein the etching is stopped at the composite anti-reflection layer for depositing a color filter and microlens on the composite anti-reflection layer.

2. The apparatus of claim 1 , wherein the apparatus is operable such that the passivation layer is included and is disposed adjacent to the first silicon layer.

3. The apparatus of claim 1 , wherein the apparatus is operable such that the barrier is included and is disposed adjacent to the first silicon layer.

4. The apparatus of claim 1 , wherein the first silicon layer includes a device silicon layer.

5. The starting material of claim 1 , wherein the stack of layers of the composite anti-reflection layer includes alternating layers of at least SiN and SiO x .

6. The starting material of claim 1 , wherein the stack of layers of the composite anti-reflection layer includes alternating layers of at least one high refractive index and at least one low refractive index.

7. The apparatus of claim 1 , wherein the second silicon layer includes a support silicon layer.

8. The apparatus of claim 1 , wherein the apparatus is operable such that a first portion of the composite anti-reflection layer is deposited on the first silicon layer and a second portion of the composite anti-reflection layer is deposited on the second silicon layer, such that the composite anti-reflection layer is formed when the first portion of the composite anti-reflection layer is bonded to the second portion of the composite anti-reflection layer.

9. The apparatus of claim 8 , wherein the apparatus is operable such that the second silicon layer is bonded to the first silicon layer via the composite anti-reflection layer.

10. The apparatus of claim 1 , wherein the apparatus is operable such that the composite anti-reflection layer is deposited on the first silicon layer after the first silicon layer is bonded to the second silicon layer.

11. The apparatus of claim 10 , wherein the apparatus is operable such that the first silicon layer and the second silicon layer are bonded using an oxide layer.

12. The apparatus of claim 11 , wherein the apparatus is operable such that the composite anti-reflection layer is deposited on the first silicon layer after etching the oxide layer off of the first silicon layer.

13. The apparatus of claim 1 , wherein the composite anti-reflection layer minimizes reflection associated with the first silicon layer.

14. A method, comprising:

providing a first silicon layer having at least one of an associated passivation layer and barrier;

disposing a composite anti-reflection layer adjacent to the first silicon layer, the composite anti-reflection layer including a stack of layers each with a different thickness and refractive index; and

disposing a second silicon layer adjacent to the composite anti-reflection layer opposite the first silicon layer;

wherein the first silicon layer, the composite anti-reflection layer, and the second silicon layer are components of a starting material that is adapted for use in the manufacture of an imager;

wherein imager pixels and circuits are deposited on the first silicon layer using the starting material during the manufacturing of the imager;

wherein inter-layer dielectrics and metals are deposited on the imager pixels and the circuits during the manufacturing of the imager to generate a structure;

wherein during the manufacturing of the imager, the structure is deposited on a support substrate and the second silicon layer is etched off, wherein the etching is stopped at the composite anti-reflection layer for depositing a color filter and microlens on the composite anti-reflection layer.