Semiconductor device and manufacturing method of semiconductor device

1. A method, comprising:

forming a first trench over a semiconductor substrate;

forming a first ion implantation layer over a surface of the semiconductor substrate and over a bottom of the first trench;

forming a second gate from substantially a respective bottom of each side wall of the first trench to a respective middle portion thereof, and forming a second trench penetrating through a portion of the first ion implantation layer over the bottom of the first trench;

forming a respective drift region over each side wall of the first trench over the second trench; and

forming a second ion implantation layer over the inner surface of the second trench.

2. The method of claim 1 , wherein the forming the first trench includes:

forming a pad oxide layer over the semiconductor substrate;

forming a photoresist pattern that defines a first trench region over the pad oxide layer and removing the photoresist pattern after the pad oxide layer is patterned, thereby forming a patterned pad oxide layer;

forming the first trench by etching the semiconductor substrate using the patterned pad oxide layer as a mask; and

removing the patterned pad oxide layer.

3. The method of claim 2 , comprising:

forming a voltage match region at both side walls of the first trench.

4. The method of claim 3 , wherein the forming the voltage match region comprises:

forming a photoresist pattern over the semiconductor substrate from which the first trench region is excluded; and

forming the voltage match region by using the photoresist pattern as an ion implantation mask and processing an ion implantation process by tilting an ion implantation angle towards the both side walls of the first trench.

5. The method of claim 1 , wherein at least one of the first ion implantation layer and the second ion implantation layer is formed through an ion implantation process in a blanket scheme.

6. The method of claim 1 , wherein forming the second gate and forming the second trench includes:

forming a polysilicon layer over the semiconductor substrate by burying the first trench;

etching the polysilicon layer so that the first ion implantation layer is exposed and the polysilicon layer remains at both side walls of the first trench to form a first gate; and

forming the second gate by etching the first gate to the respective middle portion.

7. The method of claim 6 , wherein forming the second gate comprises:

forming a photoresist pattern over the first ion implantation layer formed over the surface of the semiconductor substrate;

etching the first gate to the respective middle portion by performing an etch process using the photoresist pattern as a mask and controlling process conditions including etch time and amount of injected gas; and

removing the photoresist pattern.

8. The method of claim 1 , comprising:

forming a well region over an inner surface of the first trench.

9. The method of claim 8 , wherein the second trench is formed to be deeper than the well region.

10. The method of claim 1 , wherein the forming the drift region comprises:

forming a photoresist pattern over the first implantation layer formed over the surface of the semiconductor substrate;

forming the drift region by using the photoresist pattern as a mask and processing an ion implantation process by tilting an ion implantation angle towards the both side walls of the first trench; and

removing the photoresist pattern.

11. The method of claim 1 , comprising:

forming a silicide layer over exposed surfaces of the first ion implantation layer and the second gate.

12. The method of claim 1 , wherein forming a first trench over a semiconductor substrate, comprises:

forming the first trench on the semiconductor substrate.

13. The method of claim 1 , wherein forming a first ion implantation layer over a surface of the semiconductor substrate and over a bottom of the first trench, comprises:

forming the first ion implantation layer on the surface of the semiconductor substrate and on the bottom of the first trench.

14. The method of claim 1 , wherein forming a second ion implantation layer over the inner surface of the second trench, comprises:

forming the second ion implantation layer on the inner surface of the second trench.

15. An apparatus comprising:

a semiconductor substrate in which a first trench is formed and a second trench is formed at a middle portion of the first trench;

a first ion implantation layer that is formed over a surface of the semiconductor substrate and over a bottom of the first trench, wherein each portion of the first ion implantation layer formed on the bottom of the first trench being spaced from each other by the second trench;

a second gate formed from a respective bottom of each side wall of the first trench to a respective middle portion thereof;

a respective drift region formed at each side wall of the first trench over the second trench; and

a second ion implantation layer formed on an inner surface of the second trench.

16. The apparatus of claim 15 , comprising:

a well region formed over an inner surface of the first trench.

17. The apparatus of claim 16 , wherein the well region is formed at a depth substantially the same as the second trench.

18. The apparatus of claim 16 , wherein the well region is formed at a depth shallower than the second trench.

19. The apparatus of claim 15 , comprising:

a respective voltage match region formed at each side wall of the first trench.

20. The apparatus of claim 15 , further comprising:

a silicide layer formed on exposed surfaces of the first ion implantation layer and the second gate.