Organic light emission diode display device and method of fabricating the same
An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.
1. An organic light emission diode (OLED) display device, comprising:
a substrate comprising a pixel region and a non-pixel region;
a buffer layer disposed on the substrate;
a semiconductor layer disposed on the buffer layer, and comprising a channel region, and source and drain regions;
a gate electrode disposed to correspond to the channel region of the semiconductor layer;
a gate insulating layer disposed between the semiconductor layer and the gate electrode;
source and drain electrodes electrically connected to the source and drain regions, respectively, of the semiconductor layer;
an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes; and
a first electrode, an organic layer, and a second electrode that arc electrically connected to one of the source and drain electrodes,
wherein an area of the buffer layer, the gate insulating layer, and the interlayer insulating layer is partially removed from the non-pixel region, and the area that is partially removed corresponds to 8% to 40% of a total area of the substrate.
2. The OLED display device of claim 1 , wherein the area that is partially removed is within an area ranging from an outer edge of the non-pixel region towards an outer edge of the pixel region.
3. The OLED display device of claim 1 , wherein the semiconductor layer comprises metal particles.
4. The OLED display device of claim 1 , wherein the buffer layer, the gate insulating layer, and the interlayer insulating layer comprise silicon dioxide (SiO 2 ), silicon nitride (SiN x ), or a compound of the SiO 2 or the SiN X .
5. The OLED display device of claim 1 , wherein the buffer layer, the gate insulating layer, or the interlayer insulating layer comprises a silicon oxide (SiO 2 ) layer or a silicon nitride (SiNx) layer.
6. The OLED display device of claim 1 , wherein the area of the buffer layer, the gate insulating layer, and the interlayer insulating layer is removed, at least partially, from the non-pixel region such that no portion of the buffer layer, the gate insulating layer, and the interlayer insulating layer remains in the removed area of the non-pixel region.