Digital alloy absorber for photodetectors
In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.
1. An absorber layer for a photodetector, comprising:
a host semiconductor material grown as a plurality of host layers; and
an insert semiconductor material periodically inserted as a plurality of insert layers interleaved with at least some of the plurality of host layers each having a host separation thickness therebetween as the host semiconductor material is grown, each of the plurality of insert layers having an insert thickness;
wherein the insert thickness is two monolayers or less and less than the host separation thickness, a barrier layer for blocking one carrier type from the absorber layer while allowing flow of another carrier type is grown on the absorber layer, and the absorber layer is grown directly on a buffer layer that is grown directly on a substrate layer and the buffer layer and the substrate layer are of the same material; and
wherein the host semiconductor material and the insert semiconductor material have substantially mismatched lattice constants and the host semiconductor material, the substrate layer, and the barrier layer have lattice constants sufficiently similar to yield pseudomorphic growth.
2. The absorber layer of claim 1 , wherein the host separation thickness is at least 10 monolayers.
3. The absorber layer of claim 1 , wherein the photodetector comprises a barrier photodetector.
4. The absorber layer of claim 1 , wherein the photodetector is one of an array of elements.
5. The absorber layer of claim 1 , wherein the host semiconductor material comprises InAsSb.
6. The absorber layer of claim 1 , wherein the insert semiconductor material of the plurality of insert layers comprises InSb.
7. The absorber layer of claim 1 , wherein the insert thickness is at least 1/10 thinner than the host separation thickness.
8. The absorber layer of claim 1 , wherein the host separation thickness stepwise increases along a growth direction of the host semiconductor material in order to yield a graded bandgap of the absorber layer.
9. A method of growing an absorber layer for an nBn photodetector, comprising:
growing a plurality of host layers comprising a host semiconductor material; and
inserting periodically an insert semiconductor material into the host semiconductor material as the host semiconductor material is grown such that plurality of insert layers are interleaved with at least some of the plurality of host layers each having a host separation thickness therebetween, each of the plurality of insert layers having an insert thickness;
wherein the insert thickness is two monolayers or less and less than the host separation thickness, a barrier layer for blocking one carrier type from the absorber layer while allowing flow of another carrier type is grown on the absorber layer and the absorber layer is grown directly on a buffer layer that is grown directly on a substrate layer and the buffer layer and the substrate layer are of the same material; and
wherein the host semiconductor material and the insert semiconductor material have substantially mismatched lattice constants and the host semiconductor material, the substrate layer, and the barrier layer have lattice constants sufficiently similar to yield pseudomorphic growth.
10. The method of claim 9 , wherein the insert thickness is at least 1/10 thinner than the host separation thickness.
11. The method of claim 9 , wherein the host separation thickness is at least 10 monolayers.
12. The method of claim 9 , wherein the photodetector comprises a barrier photodetector.
13. The method of claim 9 , wherein the photodetector is one of an array of elements.
14. The method of claim 9 , wherein the host semiconductor material comprises InAsSb.
15. The method of claim 9 , wherein the insert semiconductor material of the plurality of insert layers comprises InSb.
16. The method of claim 9 , wherein the host separation thickness stepwise increases along a growth direction of the host semiconductor material in order to yield a graded bandgap of the absorber layer.
17. A photodetector, comprising:
a substrate layer;
an absorber layer comprising a host semiconductor material grown as a plurality of host layers directly on a buffer layer that is grown directly on a substrate layer and the buffer layer and the substrate layer are of the same material, and an insert semiconductor material periodically inserted as a plurality of insert layers interleaved with at least some of the plurality of host layers each having a host separation thickness therebetween as the host semiconductor material is grown, each of the plurality of insert layers having an insert thickness;
a barrier layer grown on the absorber layer, the barrier layer for blocking one carrier type from the absorber layer while allowing flow of another carrier type; and
a top contact layer grown on the barrier layer;
wherein the insert thickness is two monolayers or less and less than the host separation thickness; and
wherein the host semiconductor material and the insert semiconductor material have substantially mismatched lattice constants and the host semiconductor material, the substrate layer, and the barrier layer have lattice constants sufficiently similar to yield pseudomorphic growth.
18. The photodetector of claim 17 , wherein the insert thickness is at least 1/10 thinner than the host separation thickness.
19. The photodetector of claim 17 , wherein the host separation thickness is at least 10 monolayers.
20. The photodetector of claim 17 , wherein the host separation thickness stepwise increases along a growth direction of the host semiconductor material in order to yield a graded bandgap of the absorber layer.