Method of fabricating a semiconductor device having gate finger elements extended over a plurality of isolation regions formed in the source and drain regions
View Patent ↗Embodiments of the present invention describe a semiconductor device implementing the reduced-surface-field (RESURF) effect. The semiconductor device comprises a source/drain region having a plurality of isolation regions interleaved with source/drain extension regions. A gate electrode is formed on the semiconductor device, where the gate electrode includes gate finger elements formed over the isolation regions to induce capacitive coupling. The gate finger elements enhance the depletion of the source/drain extension regions, thus inducing a higher breakdown voltage.
1. A method of forming a semiconductor device comprising:
depositing a dielectric layer over a substrate;
depositing a first poly layer over the dielectric layer;
forming a plurality of isolation regions in a source region or a drain region of the substrate;
etching the first poly layer to form a patterned first poly layer over a channel region of the substrate; and
forming a second poly layer over the patterned first poly layer, the second poly layer having finger elements extended over the plurality of isolation regions.
2. The method of claim 1 , wherein forming the plurality of isolation regions comprises:
forming a plurality of trenches in the source region or drain region of the substrate; and
depositing an oxide layer into each of the plurality of trenches so as to form the plurality of isolation regions.
3. The method of claim 2 , wherein forming a plurality of trenches comprises:
depositing a first mask on the first poly layer; and
etching portions of the substrate not covered by the first mask to form the plurality of trenches in the substrate.
4. The method of claim 2 , further comprising:
polishing the plurality of isolation regions such that the top surface of each of the plurality of isolation regions is substantially coplanar with the top surface of the first poly layer.
5. The method of claim 1 , wherein etching the first poly layer comprises:
forming a second hardmask over the first poly layer, the second mask having a first opening exposing the source region, and a second opening exposing the drain region;
etching portions of the first poly layer in alignment to the second mask to form a patterned first poly layer over the gate region; and
etching portions of the plurality of isolation regions so that the top surface of each of the plurality of isolation regions is substantially coplanar with the top surface of the dielectric layer.
6. The method of claim 5 , further comprising:
forming lightly doped diffusion (LDD) regions in source and drain regions of substrate.
7. The method of claim 1 , wherein forming the second poly layer over the patterned first poly layer comprises:
depositing a poly film directly on the patterned first poly layer;
and patterning the poly film to form the second poly layer with finger elements extended over the plurality of isolation regions.