RF sputtering arrangement
View Patent ↗Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.
1. Apparatus for sputtering, comprising:
a vacuum chamber defined by at least one side wall, a base and a cover;
at least one first electrode having a first surface arranged in the vacuum chamber;
a counter electrode having a surface arranged in the vacuum chamber, and
a RF generator, the RF generator being configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode, wherein
the counter electrode comprises at least two cavities in communication with the vacuum chamber, the cavities each having dimensions such that a plasma can be formed in the cavity, the counter electrode comprises a side wall frame and at least three additional electrically conductive members defining the at least two cavities, the counter electrode is arranged in peripheral regions of the vacuum chamber, the additional electrically conductive members protrude from the side wall frame, the additional electrically conductive members are arranged spaced at a distance and generally parallel to one another, the additional electrically conductive members each comprises a ring, and the cavities are ring-shaped.
2. The apparatus for sputtering according to claim 1 , wherein,
the counter electrode comprises at least a portion of the side wall and/or the base of the vacuum chamber and/or the cover and one or more of the additional electrically conductive members.
3. The apparatus according to claim 1 , wherein the counter electrode is arranged out of line of sight of the first electrode to a substrate.
4. The apparatus according to claim 1 , wherein the number of cavities is equal to the number of additional electrically conductive members minus 1.
5. The apparatus according to claim 1 , wherein at least one additional electrically conductive member is arranged generally parallel to the side wall frame.
6. The apparatus according to claim 5 , wherein the at least one additional electrically conductive member protrudes from a base frame of the counter electrode.
7. The apparatus according to claim 1 , wherein the counter electrode has a surface area Ac and the first electrode has a surface area At, wherein Ac≧At.
8. The apparatus according to claim 1 , wherein the first electrode comprises a target of material to be sputtered.
9. The apparatus according to claim 1 , wherein a channel for pumping out the vacuum chamber and/or supplying gas to the vacuum chamber is arranged between the first electrode and the cover and/or between a substrate and the base and/or in the side wall.
10. The apparatus according to claim 1 further comprising at least one magnet positioned adjacent a second surface of the first electrode, the second surface opposing the first surface of the first electrode.
11. The apparatus according to claim 10 , wherein the magnet is rotatable.
12. Apparatus for sputtering, comprising:
a vacuum chamber defined by at least one side wall, a base and a cover;
at least one first electrode having a first surface arranged in the vacuum chamber;
a counter electrode having a surface arranged in the vacuum chamber, and
a RF generator, the RF generator being configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode,
wherein
the counter electrode comprises at least two cavities in communication with the vacuum chamber, the cavities each having dimensions such that a plasma can be formed in the cavity, wherein the counter electrode is arranged in peripheral regions of the vacuum chamber, the counter electrode comprises a side wall frame and at least three additional electrically conductive members defining the at least two cavities, the additional electrically conductive members protrude from the side wall frame, and the additional electrically conductive members extend radially from the side wall frame.
13. The apparatus according to claim 12 , wherein the counter electrode has a surface area Ac and the first electrode has a surface area At, wherein Ac≧At.
14. The apparatus according to claim 12 , wherein the first electrode comprises a target of material to be sputtered.
15. The apparatus according to claim 12 , wherein a channel for pumping out the vacuum chamber and/or supplying gas to the vacuum chamber is arranged between the first electrode and the cover and/or between a substrate and the base and/or in the side wall.
16. The apparatus according to claim 12 further comprising at least one magnet positioned adjacent a second surface of the first electrode, the second surface opposing the first surface of the first electrode.
17. The apparatus according to claim 16 , wherein the magnet is rotatable.
18. The apparatus according to claim 12 , wherein the additional electrically conductive members extend from a cover frame to a base frame of the counter electrode.
19. The apparatus according to claim 12 , wherein the cavities have a generally trapezoidal shape.