Technique to reduce FG-FG interference in multi bit NAND flash memory in case of adjacent pages not fully programmed
View Patent ↗A method of reducing floating gate-floating gate interference in programming NAND flash memory is provided. Prior to programming an upper page of a memory cell, the method includes checking whether adjacent pages of near memory cells have been programmed. The method may program adjacent pages of near memory cells that have not been programmed.
1. A method for reducing floating gate-floating gate interference in programming memory, the method comprising:
during programming of an upper page of a memory cell,
determining whether one or more adjacent pages of the memory cell has been programmed;
if the one or more adjacent pages is not programmed, programming with a selected threshold voltage each adjacent page of the memory cell that is determined to be not programmed; and
programming the upper page of the memory cell.
2. The method of claim 1 , wherein the memory cell is capable of holding 3 or more bits of data.
3. The method of claim 1 , wherein the one or more adjacent pages of the memory cell is an intermediate page of near memory cells of the memory cell.
4. The method of claim 3 , wherein the one or more adjacent pages is a middle page of near memory cells of the memory cell.
5. The method of claim 1 , wherein the selected threshold voltage of each adjacent page of the memory cell programmed corresponds to an “FF”.
6. The method of claim 1 , wherein the selected threshold voltage of each adjacent page of the memory cell programmed corresponds to a “11”.
7. The method of claim 1 , wherein the selected threshold voltage of each adjacent page of the memory cell programmed corresponds to a “00”.
8. The method of claim 1 , further comprising determining whether a flag byte associated with an adjacent page of the memory cell indicates whether the adjacent page has been programmed.
9. The method of claim 1 , further comprising verifying the programming of the upper page of the memory cell.
10. The method of claim 1 , further comprising storing data to be programmed into the upper page in a first location prior to programming the upper page of the memory cell.
11. A memory, comprising:
a memory array of one or more memory cells;
an internal controller capable of programming an upper page of a memory cell by determining whether one or more adjacent pages of the memory cell have been programmed, if the one or more adjacent pages has not been programmed, programming with a selected threshold voltage each adjacent page of the memory cell that is determined to be not programmed, and programming the upper page of the memory cell.
12. The memory of claim 11 , wherein the internal controller is further capable of determining whether a flag byte associated with an adjacent page to the memory cell indicates whether the adjacent page has been programmed.
13. The memory of claim 11 , wherein one or more memory cells of the memory array comprise multilevel cells.
14. The memory of claim 11 , wherein one or more memory cells of the memory array comprise two or more pages.
15. A non-transient medium having machine-readable instructions stored thereon for execution by a processor, wherein, if executed by the processor, the machine-readable instructions cause the processor to perform a method comprising:
during programming of an upper page of a memory cell,
determining whether one or more adjacent pages of the memory cell has been programmed;
if the one or more adjacent pages is not programmed, programming with a selected threshold voltage each adjacent page of the memory cell that is determined to be not programmed; and
programming the upper page of the memory cell.
16. The non-transient medium of claim 15 , further comprising verifying that a threshold voltage of one or more adjacent pages of the memory cell is at the proper voltage after programming the one or more adjacent pages.
17. The non-transient medium of claim 15 , wherein the one or more adjacent pages are middle pages of near memory cells of the memory cell.
18. The non-transient medium of claim 15 , wherein programming the one or more adjacent pages of the memory cell comprises erasing a middle page of the one or more adjacent pages.
19. The non-transient medium of claim 15 , wherein the selected threshold voltage of each adjacent page of the memory cell programmed corresponds to a “11”.
20. The non-transient medium of claim 15 , wherein the selected threshold voltage of each adjacent page of the memory cell programmed corresponds to a “00”.