Heat treatment apparatus and method for heating substrate by light-irradiation
View Patent ↗A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L 1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L 1 , and is then attenuated from the target value L 1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.
1. A heat treatment method for heating a substrate in which impurities are implanted to activate the impurities, comprising: an impurity implanting step of implanting impurities in a given region of a semiconductor element formed on a substrate; and a light-irradiation step of performing light-irradiation and heating of a surface of said substrate including said given region for 10 to 1,000 milliseconds, wherein said light-irradiation step includes: a constant output irradiation step of keeping a light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from a target value; and an output attenuating step, subsequent to said constant output irradiation step, of attenuating the light-emission output over a period of time from 1 to 100 milliseconds.
2. The heat treatment method according to claim 1 , wherein said impurity implanting step includes a step of implanting impurities in a source/drain region of a field effect transistor formed on the substrate.
3. The heat treatment method according to claim 2 , wherein said impurity implanting step further includes a step of implanting impurities in an extension region of the field effect transistor.
4. The heat treatment method according to claim 3 , further comprising: a gate electrode forming step, prior to said light-irradiation step, of forming a gate electrode of the field effect transistor on the surface of the substrate.
5. The heat treatment method according to claim 4 , wherein the light-irradiation of said light-irradiation step is performed with a flash lamp.
6. A heat treatment method for heating a substrate in which impurities are implanted to activate the impurities, comprising: an impurity implanting step of implanting impurities in a given region of a semiconductor element formed on a substrate; and a light-irradiation step of performing light-irradiation and heating of a surface of said substrate including said given region for 10 to 1,000 milliseconds, wherein said light-irradiation step includes: an output increasing step of increasing a light-emission output up to a target value over a period of time from 1 to 100 milliseconds; and a constant output irradiation step, subsequent to said output increasing step, of keeping the light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said target value.
7. The heat treatment method according to claim 6 , wherein said impurity implanting step includes a step of implanting impurities in a source/drain region of a field effect transistor formed on the substrate.
8. The heat treatment method according to claim 7 , wherein said impurity implanting step further includes a step of implanting impurities in an extension region of the field effect transistor.
9. The heat treatment method according to claim 8 , further comprising: a gate electrode forming step, prior to said light-irradiation step, of forming a gate electrode of the field effect transistor on the surface of the substrate.
10. The heat treatment method according to claim 9 , wherein the light-irradiation of said light-irradiation step is performed with a flash lamp.
11. A heat treatment method for heating a substrate in which impurities are implanted to activate the impurities, comprising: an impurity implanting step of implanting impurities in a given region of a semiconductor element formed on a substrate; and a light-irradiation step of performing light-irradiation and heating of a surface of said substrate including said given region for 10 to 1,000 milliseconds, wherein said light-irradiation step includes: an output increasing step of increasing a light-emission output up to a target value over a period of time from 1 to 100 milliseconds; a constant output irradiation step, subsequent to said output increasing step, of keeping the light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said target value; and an output attenuating step, subsequent to said constant output irradiation step, of attenuating the light-emission output over a period of time from 1 to 100 milliseconds.
12. The heat treatment method according to claim 11 , wherein said impurity implanting step includes a step of implanting impurities in a source/drain region of a field effect transistor formed on the substrate.
13. The heat treatment method according to claim 12 , wherein said impurity implanting step further includes a step of implanting impurities in an extension region of the field effect transistor.
14. The heat treatment method according to claim 13 , further comprising: a gate electrode forming step, prior to said light-irradiation step, of forming a gate electrode of the field effect transistor on the surface of the substrate.
15. The heat treatment method according to claim 14 , wherein the light-irradiation of said light-irradiation step is performed with a flash lamp.
16. A heat treatment method for heating a substrate in which impurities are implanted to activate the impurities, comprising: an impurity implanting step of implanting impurities in a given region of a semiconductor element formed on a substrate; and a light-irradiation step of performing light-irradiation and heating of a surface of said substrate including said given region for 10 to 1,000 milliseconds, wherein said light-irradiation step includes: an output increasing step of increasing a light-emission output up to a first target value over a period of time from 1 to 100 milliseconds; a first constant output irradiation step, subsequent to said output increasing step, of keeping the light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said first target value; a first output attenuating step, subsequent to said first constant output irradiation step, of attenuating the light-emission output from said first target value to a second target value lower than said first target value over a period of time from 1 to 100 milliseconds; a second constant output irradiation step, subsequent to said first output attenuating step, of keeping the light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said second target value; and a second output attenuating step, subsequent to said second constant output irradiation step, of attenuating the light-emission output over a period of time from 1 to 100 milliseconds.
17. The heat treatment method according to claim 16 , wherein said impurity implanting step includes a step of implanting impurities in a source/drain region of a field effect transistor formed on the substrate.
18. The heat treatment method according to claim 17 , wherein said impurity implanting step further includes a step of implanting impurities in an extension region of the field effect transistor.
19. The heat treatment method according to claim 18 , further comprising: a gate electrode forming step, prior to said light-irradiation step, of forming a gate electrode of the field effect transistor on the surface of the substrate.
20. The heat treatment method according to claim 19 , wherein the light-irradiation of said light-irradiation step is performed with a flash lamp.
21. A heat treatment method for heating a substrate in which impurities are implanted to activate the impurities, comprising: an impurity implanting step of implanting impurities in a given region of a semiconductor element formed on a substrate; and a light-irradiation step of performing light-irradiation and heating of a surface of said substrate including said given region for 10 to 1,000 milliseconds, wherein said light-irradiation step includes: an output increasing step of increasing a light-emission output up to a target value over a period of time not more than five milliseconds; and an output attenuating step, subsequent to said output increasing step, of attenuating the light-emission output over a period of time from 1 to 100 milliseconds.
22. The heat treatment method according to claim 21 , wherein said impurity implanting step includes a step of implanting impurities in a source/drain region of a field effect transistor formed on the substrate.
23. The heat treatment method according to claim 22 , wherein said impurity implanting step further includes a step of implanting impurities in an extension region of the field effect transistor.
24. The heat treatment method according to claim 23 , further comprising: a gate electrode forming step, prior to said light-irradiation step, of forming a gate electrode of the field effect transistor on the surface of the substrate.
25. The heat treatment method according to claim 24 , wherein the light-irradiation of said light-irradiation step is performed with a flash lamp.
26. A heat treatment method for heating a substrate by irradiating the substrate with light, comprising: a first light-irradiation step of performing light-irradiation of a substrate with a first light-emission output being as a target value; a second light-irradiation step, subsequent to said first light-irradiation step, of performing light-irradiation of the substrate in accordance with an output waveform that peaks at a second light-emission output that is higher than said first light-emission output and a maximum value of the light-emission output in said first light-irradiation step; and a third light-irradiation step, after said peak, of performing additional light-irradiation of the substrate with a light-emission output lower than said second light-emission output, wherein a total of a light-irradiation time in said first light-irradiation step, a light-irradiation time in said second light-irradiation step, and a light-irradiation time in said third light-irradiation step is not more than one second.
27. The heat treatment method according to claim 26 , wherein said first light-irradiation step includes a first constant output irradiation step of keeping the light-emission output that averages out at said first light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said first light-emission output.
28. The heat treatment method according to claim 27 , wherein the light-irradiation time in said second light-irradiation step is between 1 and 5 milliseconds.
29. The heat treatment method according to claim 28 , wherein in said third light-irradiation step, the light-irradiation is performed for 5 to 100 milliseconds while gradually reducing the light-emission output.
30. The heat treatment method according to claim 28 , wherein said third light-irradiation step includes a second constant output irradiation step of keeping the light-emission output that averages out at a third light-emission output lower than said second light-emission output for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from said third light-emission output.
31. The heat treatment method according to claim 30 , wherein: said third light-emission output is higher than said first light-emission output; and the light-irradiation time in said third light-irradiation step is longer than the light-irradiation time in said first light-irradiation step.
32. The heat treatment method according to claim 26 , wherein the light-irradiation in said first light-irradiation step, the light-irradiation in said second light-irradiation step, and the light-irradiation in said third light-irradiation step are performed, with a flash lamp, on the substrate in which impurities are implanted.