Semiconductor device producing method
View Patent ↗Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10 −1 or lower.
1. A producing method of a semiconductor device, comprising at least:
loading at least one substrate formed on a surface thereof with a metal film into a processing chamber; and
forming an oxide film including silicon on the surface of the substrate which includes the metal film;
wherein the forming the oxide film includes:
supplying a first reaction material including a silicon atom into the processing chamber while heating the substrate at a predetermined temperature; and
supplying hydrogen and a second reaction material including an oxygen atom into the processing chamber while heating the substrate at the predetermined temperature;
wherein in the forming the oxide film, supply of the first reaction material and supply of the second reaction material and the hydrogen are alternately repeated a plurality of times to form the oxide film;
wherein in the forming the oxide film, after a thickness of the oxide film reaches a desired thickness, the oxide film is formed without supplying the processing chamber with hydrogen in the step supplying the hydrogen and the second reaction material,
wherein
the predetermined temperature is in a range of 100 to 450° C.,
the second reaction material is ozone, and
when the predetermined temperature and a supply ratio of the ozone with respect to the hydrogen is defined as (T, O 3 /H 2 ), the supply ratio of the ozone with respect to the hydrogen is equal to or less than straight lines connecting points of (T, O 3 /H 2 )=(100° C., 8×10 −4 ), (200° C., 2×10 −2 ), (300° C., 9×10 −2 ), (400° C., 2×10 −1 ), (450° C., 2.5×10 −1 ).
2. A producing method of a semiconductor device, comprising at least:
loading at least one substrate formed on a surface thereof with a metal film into a processing chamber; and
forming an oxide film including silicon on the surface of the substrate which includes the metal film;
wherein the forming the oxide film includes:
supplying a first reaction material including a silicon atom into the processing chamber while heating the substrate at a predetermined temperature; and
supplying hydrogen and a second reaction material including an oxygen atom into the processing chamber while heating the substrate at the predetermined temperature;
wherein in the forming the oxide film, supply of the first reaction material and supply of the second reaction material and the hydrogen are alternately repeated a plurality of times to form the oxide film;
wherein in the forming the oxide film,
after a thickness of the oxide film reaches a desired thickness,
the oxide film is formed without supplying the hydrogen in a supply step of the second reaction material and the hydrogen;
wherein
the predetermined temperature is 300° C.,
the second reaction material is ozone,
in the forming the oxide film, the hydrogen is supplied into the processing chamber in the supply step of the second reaction material and the hydrogen until a thickness of the oxide film reaches 20 Å, and
after the thickness of the oxide film reaches 20 Å, the oxide film is formed without supplying the hydrogen into the processing chamber in the supply step of the second reaction material and the hydrogen.