Depletion mode circuit protection device
View Patent ↗A non-volatile microelectronic memory device that includes a depletion mode circuit protection device that prevents high voltages, which are applied to bitlines during an erase operation, from being applied to and damaging low voltage circuits which are electrically coupled to the bitlines.
1. A microelectronic device, comprising:
a memory cell array;
a depletion mode circuit protection device electrically coupled to the memory cell array; and
low voltage circuitry electrically coupled to the depletion mode circuit protection device;
wherein the depletion mode circuit protection device comprises:
a high voltage side contact formed in a substrate electrically coupled to the memory cell array;
a low voltage side contact formed in the substrate electrically coupled to the low voltage circuitry;
at least one fin formed in the substrate comprising a depletion region portion and a substrate portion, wherein the at least one fin extends substantially between the high voltage side contact and the low voltage side contact; and
a conductive gate proximate at least one fin depletion region portion.
2. The microelectronic device of claim 1 , wherein the depletion region comprises arsenic or phosphorus implanted in the substrate.
3. The microelectronic device of claim 1 , wherein the at least one fin comprises a single fin.
4. The microelectronic device of claim 1 , wherein the at least one fin comprises a plurality of fins.
5. The microelectronic device of claim 4 , wherein the plurality of fins are substantially parallel.
6. A depletion mode circuit protection device, comprising:
a high voltage side contact formed in a substrate;
a low voltage side contact formed in the substrate;
at least one fin formed in the substrate comprising a depletion region portion and a substrate portion, wherein the at least one fin extends substantially between the high voltage side contact and the low voltage side contact; and
a conductive gate proximate at least one fin depletion region portion.
7. The microelectronic device of claim 6 , wherein the depletion region portion comprises arsenic or phosphorus implanted in the substrate.
8. The depletion mode circuit protection device of claim 6 , wherein the at least one fin comprises a single fin.
9. The depletion mode circuit protection device of claim 6 , wherein the at least one fin comprises a plurality of fins.
10. The depletion mode circuit protection device of claim 9 , wherein the plurality of fins are substantially parallel.
11. An electronic system, comprising:
a processor; and
a memory device in data communication with the processor, the memory device comprising:
a memory cell array;
a depletion mode circuit protection device electrically coupled to the memory cell array; and
low voltage circuitry electrically coupled to the depletion mode circuit protection device;
wherein the depletion mode circuit protection device comprises:
a high voltage side contact formed in a substrate electrically coupled to the memory cell array;
a low voltage side contact formed in the substrate electrically coupled to the low voltage circuitry;
at least one fin formed in the substrate comprising a depletion region portion and a substrate portion, wherein the at least one fin extends substantially between the high voltage side contact and the low voltage side contact; and
a conductive gate proximate at least one fin depletion region portion.
12. The electronic system of claim 11 , wherein the depletion region comprises arsenic or phosphorus implanted in the substrate.
13. The electronic system of claim 11 , wherein the at least one fin comprises a single fin.
14. The electronic system of claim 11 , wherein the at least one fin comprises a plurality of fins.
15. The electronic system of claim 14 , wherein the plurality of fins are substantially parallel.