High voltage durability III-nitride semiconductor device
A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT.
1. A high voltage durability III-nitride semiconductor device comprising:
a support substrate including a first silicon body, an insulator body over said first silicon body, and a second silicon body over said insulator body;
a III-nitride semiconductor body formed over said second silicon body, said III-nitride semiconductor body characterized by a majority charge carrier conductivity type;
said second silicon body having a conductivity type opposite said majority charge carrier conductivity type.
2. The high voltage durability III-nitride semiconductor device of claim 1 , wherein a breakdown voltage of said high voltage durability III-nitride semiconductor device is greater than 800 volts.
3. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said III-nitride semiconductor body comprises a heterojunction formed at an interface of a first III-nitride layer and a second III-nitride layer.
4. The high voltage durability III-nitride semiconductor device of claim 3 , wherein said first III-nitride layer comprises gallium nitride (GaN) and said second III-nitride layer comprises aluminum gallium nitride (AlGaN).
5. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said III-nitride semiconductor body comprises a high electron mobility transistor (HEMT).
6. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said second silicon body has P type conductivity.
7. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said second silicon body comprises <111>silicon.
8. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said first silicon body comprises <100>silicon.
9. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said first silicon body is N-doped.
10. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said first silicon body is P-doped.
11. The high voltage durability III-nitride semiconductor device of claim 1 , further comprising a silicon semiconductor device formed on said first silicon body.
12. The high voltage durability III-nitride semiconductor device of claim 11 , wherein said silicon semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET).
13. The high voltage durability III-nitride semiconductor device of claim 1 , wherein said III-nitride body comprises a PMOS device.
14. The high voltage durability III-nitride semiconductor device of claim 13 , wherein said second silicon body has N type conductivity.
15. The high voltage durability III-nitride semiconductor device of claim 1 , further comprising power electrodes formed over said III-nitride body.
16. The high voltage durability III-nitride semiconductor device of claim 15 , further comprising a gate situated between said power electrodes.
17. The high voltage durability III-nitride semiconductor device of claim 16 , wherein said gate comprises a gate dielectric and a gate electrode.
18. The high voltage durability III-nitride semiconductor device of claim 16 , wherein said III-nitride body includes a III-nitride heterojunction having a two-dimensional electron gas that includes an interrupted region under said gate.