Organic electro luminescence device and fabrication method thereof
Provided is a method of fabricating an organic electro luminescence device, the method comprising: forming a thin film transistor on a substrate; forming a passivation layer and a first electrode on the substrate including the thin film transistor; forming a contact hole exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer; forming a buffer layer and a barrier rib on a predetermined portion of an upper surface of the first electrode; forming an organic emission layer within a region defined by the buffer layer; and forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
1. A method of fabricating an organic electro luminescence device, the method comprising:
forming a thin film transistor on a substrate;
forming a passivation layer directly over the thin film transistor;
forming an opaque metal layer as a reflector over the passivation layer;
forming a first electrode layer over the opaque metal layer;
forming a contact hole through the passivation layer and the first electrode layer exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer;
forming a buffer layer on a predetermined portion of an upper surface of the first electrode;
forming a barrier rib directly adjacent to the contact hole over the buffer layer;
forming an organic emission layer within a region defined by the buffer layer; and
forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
2. The method of claim 1 , wherein the thin film transistor is formed by sequentially depositing a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode.
3. The method of claim 2 , wherein the active layer is formed of a-Si and the thin film transistor is an n-type.
4. The method of claim 1 , wherein the first electrode is formed of ITO (indium-tin-oxide) that is a transparent conductive material.
5. The method of claim 1 , wherein the first electrode is formed of an opaque metal selected from the group consisting of Al and Cr.
6. The method of claim 1 , wherein the first electrode is formed on an area except for a region where the contact hole is formed.
7. The method of claim 1 , wherein the buffer layer is provided at a periphery of a pixel region where the organic emission layer is formed.
8. The method of claim 1 , when the organic emission layer is formed by sequentially depositing an HIL, an HTL, an EML and an ETL on the first electrode.
9. The method of claim 7 , wherein the second electrodes are separated at each pixel region by the barrier rib.
10. The method of claim 1 , wherein the second electrode is formed of a transparent metal.
11. The method of claim 1 , wherein the second electrode has a thickness less than about 100 Å such that light can transmit the second electrode.
12. The method of claim 1 , wherein the first electrode is an anode and the second electrode is a cathode.
13. A method of fabricating an organic electro luminescence device, the method comprising:
forming a thin film transistor on a substrate;
forming a passivation layer directly over the thin film transistor;
forming an opaque metal layer as a reflector over the passivation layer;
patterning the passivation layer to form a contact hole;
forming a first electrode layer over the opaque metal layer;
patterning the first electrode layer to form a contact hole corresponding to the contact hole through the passivation layer and exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer;
forming a buffer layer on a predetermined portion of an upper surface of the first electrode;
forming a barrier rib directly adjacent to the contact hole on the buffer layer;
forming an organic emission layer within a region defined by the buffer layer; and
forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
14. The method of claim 13 , wherein the thin film transistor is formed by sequentially depositing a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode.
15. The method of claim 14 , wherein the active layer is formed of a-Si and the thin film transistor is an n-type.
16. The method of claim 13 , wherein the first electrode is formed of ITO (indium-tin-oxide) that is a transparent conductive material.
17. The method of claim 13 , wherein the first electrode is formed of an opaque metal selected from the group consisting of Al and Cr.
18. The method of claim 13 , wherein the first electrode is formed on an area except for a region where the contact hole is formed.
19. The method of claim 13 , wherein the buffer layer is provided at a periphery of a pixel region where the organic emission layer is formed.
20. The method of claim 13 , when the organic emission layer is formed by sequentially depositing an HIL, an HTL, an EML and an ETL on the first electrode.
21. The method of claim 13 , wherein the second electrodes are separated at each pixel region by the barrier rib.
22. The method of claim 13 , wherein the second electrode is formed of a transparent metal.
23. The method of claim 13 , wherein the second electrode has a thickness less than about 100 Å such that light can transmit the second electrode.
24. The method of claim 13 , wherein the first electrode is an anode and the second electrode is a cathode.
25. A method of fabricating an organic electro luminescence device, the method comprising:
forming a thin film transistor on a substrate;
forming a passivation layer directly over the thin film transistor;
forming an opaque metal layer as a reflector over the passivation layer;
forming a first electrode layer over the opaque metal layer;
patterning the first electrode layer to form a contact hole;
patterning the passivation layer to form a contact hole corresponding to the contact hole through the first electrode layer and exposing an upper surface of a drain electrode of the thin film transistor at a predetermined portion of the first electrode and the passivation layer;
forming a buffer layer on a predetermined portion of an upper surface of the first electrode;
forming an organic emission layer within a region defined by the buffer layer;
forming a barrier rib directly adjacent to the contact hole on the buffer layer; and
forming a second electrode on the organic emission layer such that the second electrode is electrically connected with the drain electrode through the contact hole.
26. The method of claim 25 , wherein the thin film transistor is formed by sequentially depositing a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode and a drain electrode.
27. The method of claim 26 , wherein the active layer is formed of a-Si and the thin film transistor is an n-type.
28. The method of claim 25 , wherein the first electrode is formed of ITO (indium-tin-oxide) that is a transparent conductive material.
29. The method of claim 25 , wherein the first electrode is formed of an opaque metal selected from the group consisting of Al and Cr.
30. The method of claim 25 , wherein the first electrode is formed on an area except for a region where the contact hole is formed.
31. The method of claim 25 , wherein the buffer layer is provided at a periphery of a pixel region where the organic emission layer is formed.
32. The method of claim 25 , when the organic emission layer is formed by sequentially depositing an HIL, an HTL, an EML and an ETL on the first electrode.
33. The method of claim 31 , wherein the second electrodes are separated at each pixel region by the barrier rib.
34. The method of claim 25 , wherein the second electrode is formed of a transparent metal.
35. The method of claim 25 , wherein the second electrode has a thickness less than about 100 Å such that light can transmit the second electrode.
36. The method of claim 25 , wherein the first electrode is an anode and the second electrode is a cathode.