Method for manufacturing semiconductor device
View Patent ↗An insulator layer is formed on a part of semiconductor substrate to form an isolation layer that insulates and separates active elements from each other in the first region, and to form a dummy portion which is composed of a base material of the semiconductor substrate exposed in the insulator layer in a second region. Active elements are formed in the first region. A silicide layer is formed on the first and second regions excluding at least a portion in which the TSV electrode should be formed. At least one TSV hole extending from a reverse surface side of the semiconductor substrate to an electrode pad via the second region is formed. A conductive film is formed on the inner wall of the TSV hole to form a TSV electrode electrically connected to the electrode pad.
1. A method for manufacturing a semiconductor device including a semiconductor substrate having a first region that includes a plurality of active elements and a second region that excluding any active element, at least one electrode pad electrically connected to any of said active elements, and at least one Through Silicon VIA electrode electrically connected to said electrode pad by way of said second region, the method comprising the steps of:
forming an insulator layer on a part of said semiconductor substrate to form an isolation layer that insulates and separates said active elements from each other in said first region, and to form at least one dummy portion which is composed of a base material of said semiconductor substrate exposed in said insulator layer in said second region;
forming said active elements in said first region;
forming a silicide layer on said first and second regions excluding at least a portion in which said Through Silicon VIA electrode should be formed;
forming at least one Through Silicon VIA hole extending from a reverse surface side of said semiconductor substrate to said electrode pad by way of said second region; and
forming a conductive film on a inner wall of said Through Silicon VIA hole to form said Through Silicon VIA electrode electrically connected to said electrode pad.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein
the step of forming a silicide layer comprises the steps of:
forming a mask that covers said second region to prevent the formation of said silicide layer on said dummy portion;
forming a metal layer that covers said first and second regions through said mask; and
forming said silicide layer on said active elements by reacting said active elements with a metal contained in said metal layer.
3. The method for manufacturing a semiconductor device according to claim 2 , wherein
said mask is composed of an oxide film.
4. The method for manufacturing a semiconductor device according to claim 3 , wherein
said active element is a MOSFET, and
said silicide layer is formed on a gate electrode and a source-drain diffusion layer of said MOSFET.
5. The method for manufacturing a semiconductor device according to claim 2 , wherein
said metal layer includes cobalt.
6. The method for manufacturing a semiconductor device according to claim 1 , wherein
the step of forming a Through Silicon VIA hole comprises a dry etching step.