Organic luminescence transistor device and manufacturing method thereof
The invention is an organic luminescence transistor device including: a substrate; an assistance electrode layer provided on a side of an upper surface of the substrate; an insulation film provided on a side of an upper surface of the assistance electrode layer; a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size; an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view; an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge-injection inhibiting layer; a luminescent layer provided on an upper surface of the electric-charge injection layer; and a second electrode layer provided on a side of an upper surface of the luminescent layer.
1. An organic luminescence transistor device comprising
a substrate,
an assistance electrode layer provided on a side of an upper surface of the substrate,
an insulation film provided on a side of an upper surface of the assistance electrode layer,
a first electrode provided locally on a side of an upper surface of the insulation film, the first electrode covering an area of a predetermined size,
an electric-charge-injection inhibiting layer provided on an upper surface of the first electrode, the electric-charge-injection inhibiting layer having a shape larger than that of the first electrode in a plan view, the electric-charge-injection inhibiting layer being made of a material that inhibits both holes and electrons from being transported therethrough,
an electric-charge injection layer provided on the side of an upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer,
a luminescent layer provided on an upper surface of the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge injection layer, and
a second electrode layer provided on a side of an upper surface of the luminescent layer.
2. An organic luminescence transistor device according to claim 1 , wherein
a thickness of the electric-charge injection layer is greater than a thickness of the first electrode.
3. An organic luminescence transistor device according to claim 1 , wherein
the electric-charge injection layer is made of a coat-type electric-charge injection material.
4. An organic luminescence transistor device according to claim 1 , wherein
a second electric-charge injection layer made of the same material as or a different material from the electric-charge injection material is provided between the insulation film and the first electrode and the electric-charge injection material.
5. An organic luminescence transistor device according to claim 1 , wherein
a third electric-charge injection layer for the second electrode layer is provided between the luminescent layer and the second electrode layer.
6. An organic luminescence transistor device according to claim 1 , wherein
an electric-charge transfer layer is provided between the luminescent layer and the third electric-charge injection layer.
7. An organic luminescence transistor device according to claim 1 , wherein
the electric-charge-injection inhibiting layer is made of an insulation material.
8. An organic luminescence transistor device according to claim 1 , wherein
the first electrode functions as an anode, and the second electrode functions as a cathode.
9. An organic luminescence transistor device according to claim 1 , wherein
the first electrode functions as a cathode, and the second electrode functions as an anode.
10. An organic luminescence transistor comprising
an organic luminescence transistor device according to claim 1 ,
a first voltage-feeding unit configured to apply a constant voltage between the first electrode and the second electrode of the organic luminescence transistor device, and
a second voltage-feeding unit configured to apply a variable voltage between the first electrode and the assistance electrode of the organic luminescence transistor device.
11. A luminescence display apparatus comprising a plurality of luminescent parts arranged in a matrix pattern, wherein
each of the plurality of luminescent parts has an organic luminescence transistor device according to claim 1 .
12. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 1 , the manufacturing method comprising the steps of:
preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,
providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area larger than a predetermined size in a plan view,
providing an electric-charge-injection inhibiting layer on an upper surface of the first electrode such that the electric-charge-injection inhibiting layer has a shape larger than the predetermined size of the first electrode in a plan view,
etching an edge portion of the first electrode until the edge portion of the first electrode is located inside an edge portion of the electric-charge-injection inhibiting layer such that the first electrode is made into the predetermined size,
providing an electric-charge injection layer by coating the upper surface of the insulation film at an area not provided with the first electrode or the electric-charge-injection inhibiting layer, with a coat-type electric-charge injection material, after the step of etching,
providing a luminescent layer on an upper surface of the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge injection layer, and
providing a second electrode layer on a side of an upper surface of the luminescent layer.
13. A manufacturing method of an organic luminescence transistor device, the manufacturing method being for manufacturing an organic luminescence transistor device according to claim 1 , the manufacturing method comprising the steps of:
preparing a substrate on which an assistance electrode layer and an insulation film has been formed in this order,
providing a first electrode locally on a side of an upper surface of the insulation film such that the first electrode covers an area of a predetermined size,
providing an electric-charge injection layer on the side of an upper surface of the insulation film at an area not provided with the first electrode,
providing an electric-charge-injection inhibiting layer on the whole upper surface of the first electrode and on a partial upper surface of the electric-charge injection layer such that the electric-charge-injection inhibiting layer has a shape larger than that of the first electrode in a plan view,
providing another electric-charge injection layer on the upper surface of the electric-charge injection layer at an area not provided with the electric-charge-injection inhibiting layer,
providing another electric-charge injection layer on an upper surface of the electric-charge-injection inhibiting layer,
providing a luminescent layer on an upper surface of the electric-charge-injection inhibiting layer and on an upper surface of the electric-charge injection layer, and
providing a second electrode layer on a side of an upper surface of the luminescent layer.
14. A manufacturing method of an organic luminescence transistor device according to claim 12 , wherein
a step of providing a second electric-charge injection layer made of the same material as or a different material from the electric-charge injection layer on the upper surface of the insulation film is conducted, before the step of providing the first electrode.