Nanoscale variable resistor/electromechanical transistor
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e 2 /h.
1. A nanodevice for use in an electrical circuit, comprising:
a dielectric having a dielectric constant;
a nanowire coupled the dielectric; and
a gate disposed about at least a portion of the dielectric and coupled to the nanowire for activating change of state for the nanowire, thereby enabling use of the nanowire in an electronic circuit
wherein the nanowire has a length which is changeable to achieve selectable I-V behavior.
2. The nanodevice as defined in claim 1 wherein the dielectric constant of the dielectric is greater than about 10.
3. The nanodevice as defined in claim 2 wherein the dielectric is selected from the group consisting of Si, Ge, InSb, InAs, InP, GaSb and GaAs.
4. The nanodevice as defined in claim 1 further including a voltage source for applying a potential to the nanowire to change the length.
5. The nanodevice as defined in claim 1 further including a circuit coupled to the nanodevice.
6. The nanodevice as defined in claim 5 wherein the circuit comprises an integrated circuit.
7. The nanodevice as defined in claim 1 wherein the dielectric comprises a sheath disposed about the nanowire and a gap positioned between the dielectric sheath and the nanowire.
8. The nanodevice as defined in claim 1 wherein the dielectric comprises a sheath disposed about the nanowire and has no gap between the dielectric sheath and the nanowire.
9. The nanodevice as defined in claim 7 wherein the dielectric constant is a combination of the dielectric constants of the dielectric sheath and the gap and the dielectric constant is at least about 10.
10. The nanodevice as defined in claim 1 wherein the dielectric comprises a liquid.
11. The nanodevice as defined in claim 10 wherein the liquid is selected from the group consisting of deionized water, glycerol and an oil.
12. The nanodevice as defined in claim 1 wherein the gate comprises a metal.
13. The nanodevice as defined in claim 1 wherein the dielectric comprises at least one of a gel and a sol-gel.
14. A method of switching a nanodevice comprising,
providing a nanowire coupled to a dielectric;
providing a gate coupled to the nanowire; and
applying a voltage through the gate to the nanowire to change an electron shell parameter of the nanowire, thereby causing switching of the nanodevice.
15. The method as defined in claim 13 wherein the applied voltage comprises an operating gate voltage V g of about
e
V
g
E
F
~
α
r
s
k
F
R
6
∈
to achieve rapid switching.
16. The method as defined in claim 15 wherein the electron shell parameter is changed selectively, thereby enabling switching between different radii for the nanowire which changes electrical operating state for the nanowire.
17. The method as defined in claim 15 wherein the gate voltage is selected from a group of a positive voltage to enhance density of carriers in the nanowire and negative voltage to deplete the density of carriers in the nanowire.
18. The method as defined in claim 14 wherein the nanowire has a length which is changed by applying a selected voltage, thereby converting the nanowire I-V characteristics to nonlinear behavior.
19. The method as defined in claim 14 further including the step of providing the dielectric as a combination of a liquid and solid dielectric, thereby enabling free motion of a surface of the nanowire with respect to the dielectric.
20. The method as defined in claim 14 wherein the coupling between the nanowire and the dielectric comprises a direct contact.
21. A nanodevice for use in an electrical circuit, comprising:
a dielectric having a dielectric constant;
a nanowire coupled to the dielectric; and
a gate disposed about at least a portion of the dielectric and coupled to the nanowire for activating change of state for the nanowire; thereby enabling use of the nanowire in an electric circuit;
wherein the nanowire has an electron shell system parameter that is changeable upon application of a voltage through the gate to control switching of the nanodevice.
22. The nanodevice as defined in claim 21 wherein the dielectric constant of the dielectric is greater than about 10.
23. The nanodevice as defined in claim 21 wherein the dielectric comprises a sheath disposed about the nanowire and a gap positioned between the dielectric sheath and the nanowire.
24. The nanodevice as defined in claim 21 wherein the dielectric comprises a sheath disposed about the nanowire and has no gap between the dielectric sheath and the nanowire.
25. The nanodevice as defined in claim 23 wherein the dielectric constant is a combination of the dielectric constants of the dielectric sheath and the gap and the dielectric constant is at least about 10.
26. The nanodevice as defined in claim 21 , wherein the nanowire is an elemental metal.
27. The nanodevice as defined in claim 26 , wherein the elemental metal comprises a noble metal.
28. The nanodevice as defined in claim 26 , wherein the nanowire is convertible between linear I-V behavior and non-linear I-V behavior.
29. The nanodevice as defined in claim 27 , wherein the nanowire is convertible between linear I-V behavior and non-linear I-V behavior.