Substrate for the epitaxial growth of gallium nitride
The subject of the invention is a substrate that can be used as a substrate for the epitaxial growth of layers based on gallium nitride and comprising a support material ( 11, 21 ) coated on at least one of its faces with at least one multilayered stack comprising at least one zinc-oxide-based layer ( 13, 24 ). The substrate is coated with a semiconductor structure of III-N or II-VI type, and it is characterized in that placed between the support material ( 11, 21 ) and said at least one zinc-oxide-based layer ( 13, 24 ) is at least one intermediate layer ( 12, 23 ) comprising oxides with at least two elements chosen from tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb).
1. A substrate comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zinc oxide comprising layer, said substrate coated with a III-N or II-VI semiconductor structure, wherein at least one intermediate layer is present between the support material and said at least one zinc oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zinc (Zn), indium (In), gallium (Ga) and antimony (Sb), wherein the intermediate layer is amorphous before the zinc oxide comprising layer is deposited.
2. The substrate as claimed in claim 1 , wherein the zinc oxide comprising layer consists of polycrystalline zinc oxide crystallized in the hexagonal form.
3. A substrate, comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zinc oxide comprising layer, wherein at least one intermediate layer is present between the support material and said at least one zinc oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zinc (Zn), gallium (Ga) and antimony (Sb), wherein the intermediate layer is amorphous before the zinc oxide comprising layer is deposited.
4. The substrate as claimed in claim 3 , wherein the support material is coated on only one face thereof and the multilayer consists of a single zinc oxide comprising layer or a single intermediate layer.
5. The substrate as claimed in claim 3 , wherein the support material is a material chosen from: sapphire; silicon carbide; silicon; metal; quartz; zinc oxide (ZnO); a spinel; or a glassy or amorphous material.
6. The substrate as claimed in claim 3 , wherein the support material is a silica glass, the strain point of which is equal to or above 550° C.
7. The substrate as claimed in claim 3 , wherein at least one sublayer is present between the support material and the intermediate layer.
8. The substrate as claimed in claim 7 , wherein the sublayer is a sublayer operable as a barrier to the migration of alkali metal ions, said sublayer comprising at least one of: SiOC, Si 3 N 4 , SiO 2 , TiN, and Al 2 O 3 , or mixtures thereof.
9. The substrate as claimed in claim 3 , wherein the intermediate layer is present beneath the zinc oxide comprising layer in direct contact therewith.
10. The substrate as claimed in claim 3 , wherein the intermediate layer is a layer comprised of zinc tin oxides.
11. The substrate as claimed in claim 10 , wherein the intermediate layer is doped by at least one atom selected from the group consisting of Al, Ga, In, B, Y, La, Ge, Si, P, As, Sb, Bi, Ce, Ti, Zr, Nb and Ta.
12. The substrate as claimed in claim 3 , wherein the zinc oxide comprising layer is a layer consisting of zinc oxide, in a wurtzite-type structure.
13. The substrate as claimed in claim 3 , wherein the zinc oxide comprising layer is the final layer of the multilayer.
14. The substrate as claimed in claim 3 , wherein the thickness of the zinc oxide comprising layer is between 10 and 500 nm.
15. The substrate as claimed in claim 3 , wherein the thickness of the intermediate layer is between 2 and 100 nm.
16. The substrate as claimed in claim 3 , coated with a III-N or II-VI semiconductor structure.
17. The substrate as claimed in claim 16 , wherein the semiconductor structure of III-N type comprises at least one layer based on gallium nitride (GaN).
18. The substrate as claimed in claim 16 , wherein the semiconductor structure of II-VI type comprises at least one layer based on zinc oxide (ZnO).
19. The substrate as claimed in claim 16 , wherein the semiconductor structure comprises at least one noncontinuous layer formed of nanostructures.
20. A process for obtaining a substrate comprising a support material coated on at least one face thereof with at least one multilayered stack comprising at least one zinc oxide comprising layer, wherein at least one intermediate layer is present between the support material and said at least one zinc oxide comprising layer, said at least one intermediate layer comprising oxides of at least two elements selected from the group consisting of tin (Sn), zinc (Zn), gallium (Ga) and antimony (Sb), wherein said at least one zinc oxide comprising layer and said at least one intermediate layer are deposited by sputtering, wherein said depositing the intermediate layer produces an amorphous layer.