IP Library Granted Patent US 8,947,516
Granted Patent B2
US 8,947,516 · App. 12/680,150 · Granted Feb 3, 2015

High-resolution 3D imaging of single semiconductor nanocrystals

Inventors: Hao Huang (New York, NY); Yu Yao (Cambridge, MA); C. Forbes Dewey (Boston, MA); Moungi G. Bawendi (Cambridge, MA)
Assignee: Massachusetts Institute of Technology
G01N21/6458G01N21/6428G01N2021/6441
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Quick Facts
Patent No.
US 8,947,516
App. No.
12/680,150
Granted
Feb 3, 2015
Kind
B2
Abstract

A method of imaging microscopic objects includes determining the relative depths of two or more semiconductor nanocrystals by analyzing images of the semiconductor nanocrystals at varying z-displacements.

Claims (17)

1. A method of imaging a microscopic object comprising:

arranging a microscopic object associated with at least a first and a second semiconductor nanocrystal in the optical field of an optical microscope, wherein at least one of the semiconductor nanocrystals has a coating that has an affinity for a biological structure;

recording a first fluorescence image of the first and second semiconductor nanocrystals at a first focal depth;

recording a second fluorescence image of the first and second semiconductor nanocrystals at a second focal depth different from the first focal depth; and

calculating the relative depths of the first and second semiconductor nanocrystals based at least in part on the first and second fluorescence images,

wherein calculating the relative depths of the first and second semiconductor nanocrystals includes measuring a radius of the first semiconductor nanocrystal as it appears in each of the first and second fluorescence images, wherein measuring the radius includes determining a radial intensity profile, and wherein determining the radial intensity profile includes calculating an integrated radial intensity profile for a plurality of different angles.

2. The method of claim 1 , further comprising fitting the radial intensity profile with one or more Gaussian curves.

3. The method of claim 1 , wherein measuring the radius includes measuring a radius at a plurality of different angles.

4. The method of claim 1 , further comprising fitting the radial intensity profile with one or more Gaussian curves.

5. The method of claim 1 , further comprising correlating the measured radius of the first semiconductor nanocrystal with the relative depth of the first semiconductor nanocrystal.

6. The method of claim 1 , further comprising determining relative three-dimensional coordinates of the first and second semiconductor nanocrystals based at least in part on the first and second fluorescence images.

7. The method of claim 6 , further comprising determining a three-dimensional shape of the object based at least in part on the relative three-dimensional coordinates of the first and second semiconductor nanocrystals.

8. The method of claim 1 , wherein the object includes a biological structure.

9. The method of claim 8 , wherein the biological structure includes a cell.

10. The method of claim 8 , wherein the first semiconductor nanocrystal is associated with a moiety having a specific affinity for a biomolecule.

11. The method of claim 1 , further comprising tracking the location of at least one semiconductor nanocrystal as a function of time.

12. The method of claim 11 , wherein tracking the location includes determining three-dimensional coordinates for the semiconductor nanocrystal.

Assignments (2)
CONFIRMATORY LICENSE Recorded Feb 1, 2013
From: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
To: NATIONAL INSTITUTES OF HEALTH (NIH), U.S. DEPT. OF HEALTH AND HUMAN SERVICES (DHHS), U.S. GOVERNMENT
Reel/Frame 029733/0568 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 27, 2010
From: HUANG, HAO; YAO, YU; DEWEY, C. FORBES; BAWENDI, MOUNGI G.
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 025202/0839 →
Continuity (2)
Provisional Application 60975319 · Sep 26, 2007
Related Publication 20110037846A1 · Feb 17, 2011