IP Library Granted Patent US 8,273,410
Granted Patent B2
US 8,273,410 · App. 12/680,275 · Granted Sep 25, 2012

Process for manufacturing hydrophobized microporous film

Assignees: Renesas Electronics Corporation; ULVAC Inc.
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Quick Facts
Patent No.
US 8,273,410
App. No.
12/680,275
Granted
Sep 25, 2012
Kind
B2
Abstract

A process for manufacturing a hydrophobized microporous film includes: forming an organic silica insulating film 2 on a substrate 1 ; supplying a gaseous mixture 3 composed of a silylation gas and an inert gas in an apparatus having the substrate 1 disposed therein at a temperature of the substrate 1 , the substrate 1 having the organic silica insulating film 2 formed thereon, and the temperature being equal to or higher than a dew point temperature of the silylation gas and equal to or lower than a vaporizing temperature of the silylation gas; stopping the supply of the gaseous mixture 3 into the apparatus; and heating the substrate having the organic silica insulating film 2 formed thereon, so that a hydrophobizing organic silica insulating film, in which the surface of the organic silica insulating film 2 and the surfaces of the pores are hydrophobized, can be obtained with reduced increase in the specific dielectric constant.

Claims (11)

1. A process for manufacturing a hydrophobized microporous film, including:

forming a microporous film on a substrate by a method consisting of forming a film including an aggregated material of an organic monomer and heating the substrate so that the aggregated material of the organic monomer is thermally decomposed, said heating being performed by a process selected from the group consisting of radiation by infrared lamp, moving the substrate closer to a high-temperature body, elevating a temperature of a Peltier element that is in contact with the substrate, employing microwave heating, spraying a high temperature gas over the substrate, and combinations thereof;

immediately after forming said microporous film, supplying a gaseous mixture composed of a silylation gas and an inert gas in an apparatus containing said substrate with said microporous film formed thereon at a temperature of said substrate and said temperature being equal to or higher than a dew point temperature of the silylation gas and equal to or lower than a vaporizing temperature of the silylation gas;

stopping the supply of said gaseous mixture into said apparatus and heating said substrate so that said microporous film has achieved a silylation in said apparatus.

2. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said substrate is heated in said heating said substrate to a temperature being equal to or higher than 350° degree C. and equal to or lower than 450° degree C.

3. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said silylation gas contains an organosilane compound having hydrophobic group.

4. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said silylation gas contains at least one selected from the group consisting of hexamethyldisilazane, tetramethyl cyclotetrasiloxane and ortho methyl cyclotetrasiloxane.

5. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said microporous film is composed of a material having Si—O—Si bonds.

6. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said substrate is heated in said heating said substrate to a temperature that is higher than a temperature for said silylation.

7. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said substrate is heated in said heating said substrate in a rapid thermal apparatus.

8. The process for manufacturing the hydrophobized microporous film as set forth in claim 1 , wherein said inert gas is helium gas or nitrogen gas.

Assignments (3)
CHANGE OF ADDRESS Recorded Nov 29, 2017
From: RENESAS ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044928/0001 →
CHANGE OF NAME Recorded Oct 26, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025194/0905 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 26, 2010
From: CHIKAKI, SHINICHI; NAKAYAMA, TAKAHIRO
To: NEC ELECTRONICS CORPORATION; ULVAC INC.
Reel/Frame 024144/0857 →
Priority Claims (1)
JP 2007-261620 · Oct 5, 2007 · national
Continuity (1)
Related Publication 20100221433A1 · Sep 2, 2010