IP Library Granted Patent US 8,345,336
Granted Patent B2
US 8,345,336 · App. 12/681,621 · Granted Jan 1, 2013

MEMS scanning micromirror with reduced dynamic deformation

Assignee: Innoluce B.V.
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Quick Facts
Patent No.
US 8,345,336
App. No.
12/681,621
Granted
Jan 1, 2013
Kind
B2
Abstract

A MEMS scanning micromirror with reduced dynamic deformation with a mirror support including a rotation axis beam 120 having a rotation axis 58 ; a pair of extension bars 56 parallel to the rotation axis 58 , each having a first end 140 , a midpoint 142 , and a second end 144 ; and a pair of X beams 130 , each of the pair of X beams 130 having a cross midpoint 134 . One of the pair of X beams 130 is connected to the first end 140 and the midpoint 142 of each of the pair of extension bars 56 ; the other of the pair of X beams 130 is connected to the midpoint 142 and the second end 144 of each of the pair of extension bars 56 ; and the rotation axis beam 120 is connected to the cross midpoint 134 of each of the pair of X beams 130.

Claims (48)

1. A mirror support for a MEMS scanning micromirror comprising:

a rotation axis beam having a rotation axis;

a pair of extension bars parallel to the rotation axis, each of the pair of extension bars having a first end, a midpoint, and a second end; and

a pair of X beams, each of the pair of X beams having a cross midpoint;

wherein one of the pair of X beams is connected to the first end and the midpoint of each of the pair of extension bars;

the other of the pair of X beams is connected to the midpoint and the second end of each of the pair of extension bars; and

the rotation axis beam is connected to the cross midpoint of each of the pair of X beams.

2. The mirror support of claim 1 wherein each of the pair of X beams further comprises a pair of cross beams connected at the cross midpoint, each of the cross beams having a uniform cross section between the extension bar and the rotation axis beam.

3. The mirror support of claim 1 wherein each of the pair of X beams further comprises a pair of cross beams connected at the cross midpoint, each of the cross beams having a smaller cross section at the extension bar than at the rotation axis beam.

4. The mirror support of claim 3 wherein each of the pair of cross beams are parallelogram shaped.

5. The mirror support of claim 1 wherein the rotation axis beam has a larger cross section between the cross midpoints than between the cross midpoint and an end of the rotation axis beam.

6. The mirror support of claim 1 further comprising a pair of side bars connected between the first ends of the pair of extension bars and connected between the second ends of the pair of extension bars, the pair of side bars being perpendicular to the rotation axis.

7. The mirror support of claim 1 wherein the cross section perpendicular to the rotation axis of each of the pair of extension bars is a rectangle, the rectangle having a long axis perpendicular to a mirror plane.

8. The mirror support of claim 1 further comprising:

a frame forming a mirror recess with a recess periphery, the frame having a pair of opposed frame bars on the recess periphery along the rotation axis;

a pair of cantilever beam assemblies, one of the pair of cantilever beam assemblies being fixed to one of the pair of opposed frame bars and coupled to the first end of each of the pair of extension bars, the other of the pair of cantilever beam assemblies being fixed to the other of the pair of opposed frame bars and coupled to the second end of each of the pair of extension bars; and

a pair of vertical support beams connected between each of the pair of opposed frame bars to ends of the rotation axis beam along the rotation axis.

9. The mirror support of claim 1 further comprising a frame forming a mirror recess with a recess periphery, wherein ends of the rotation axis beam are connected to the recess periphery.

10. The mirror support of claim 1 wherein each of the pair of X beams further comprises a pair of cross beams connected at the cross midpoint, the mirror support is formed from single crystal silicon having a direction of higher material stiffness, and the cross beams are oriented along the direction of higher material stiffness.

11. A mirror support for a MEMS scanning micromirror comprising:

a rotation axis beam having a rotation axis;

a first extension bar parallel to the rotation axis;

a second extension bar parallel to the rotation axis;

a first X beam; and

a second X beam;

wherein the first X beam is connected between the first extension bar and the second extension bar;

the second X beam is connected between the first extension bar and the second extension bar, the second X beam being adjacent the first X beam; and

the rotation axis beam is connected to a cross midpoint of the first X beam and a cross midpoint of the second X beam.

12. The mirror support of claim 11 wherein the first X beam comprises a first cross beam having a uniform cross section between the first extension bar and the rotation axis beam and a second cross beam having a uniform cross section between the first extension bar and the rotation axis beam.

13. The mirror support of claim 11 wherein the first X beam comprises a first cross beam having a smaller cross section at the first extension bar than at the rotation axis beam and a second cross beam having a smaller cross section at the first extension bar than at the rotation axis beam.

14. The mirror support of claim 13 wherein the first cross beam and the second cross beam are parallelogram shaped.

15. The mirror support of claim 11 wherein the rotation axis beam has a larger cross section between the cross midpoint of the first X beam and the cross midpoint of the second X beam than at an end of the rotation axis beam.

16. The mirror support of claim 11 further comprising a first side bar connected between first ends of the first extension bar and the second extension bar, and a second side bar connected between second ends of the first extension bar and the second extension bar, the first side bar and the second side bar being perpendicular to the rotation axis.

17. The mirror support of claim 11 wherein the cross section perpendicular to the rotation axis of each of the first extension bar and the second extension bar is a rectangle, the rectangle having a long axis perpendicular to a mirror plane.

18. The mirror support of claim 11 further comprising:

a frame forming a mirror recess with a recess periphery, the frame having a pair of opposed frame bars on the recess periphery along the rotation axis;

a pair of cantilever beam assemblies, one of the pair of cantilever beam assemblies being fixed to one of the pair of opposed frame bars and coupled to a first end of the first extension bar and the second extension bar, the other of the pair of cantilever beam assemblies being fixed to the other of the pair of opposed frame bars and coupled to a second end of the first extension bar and the second extension bar; and

a pair of vertical support beams connected between each of the pair of opposed frame bars to ends of the rotation axis beam along the rotation axis.

19. The mirror support of claim 11 further comprising a frame forming a mirror recess with a recess periphery, wherein ends of the rotation axis beam are connected to the recess periphery.

20. The mirror support of claim 11 wherein the first X beam comprises a first cross beam and a second cross beam connected at the cross midpoint, the mirror support is formed from single crystal silicon having a direction of higher material stiffness, and the first cross beam is oriented along the direction of higher material stiffness.

21. The mirror support of claim 20 wherein the second cross beam is oriented along the direction of higher material stiffness.

22. A method of manufacturing a mirror support for a MEMS scanning micromirror comprising:

providing a single crystal silicon wafer having a direction of higher material stiffness; and

forming the mirror support from the single crystal silicon wafer, the mirror support comprising a rotation axis beam having a rotation axis, a pair of extension bars parallel to the rotation axis, a pair of X beams having a pair of cross beams connected to each of the pair of extension bars and connected to the rotation axis beam at a cross midpoint;

wherein the cross beams are oriented along the direction of higher material stiffness.

23. The method of claim 22 wherein the single crystal silicon wafer is a (100) single crystal silicon wafer and the rotation axis is oriented along a <100> direction.

24. The method of claim 22 wherein the single crystal silicon wafer is a (100) single crystal silicon wafer and the rotation axis is oriented along a <010> direction.

25. The method of claim 23 wherein the single crystal silicon wafer is a (110) single crystal silicon wafer and the rotation axis is oriented along a <001> direction.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jun 13, 2016
From: INNOLUCE B.V.
To: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT
Reel/Frame 038978/0959 →
CHANGE OF ADDRESS FOR ASSIGNEE Recorded Mar 11, 2016
From: INNOLUCE B.V.
To: INNOLUCE B.V.
Reel/Frame 038063/0441 →
SECURITY INTEREST Recorded Jan 28, 2016
From: INNOLUCE B.V.
To: ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT
Reel/Frame 037604/0304 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2010
From: KRASTEV, KRASSIMIR T.; VAN LIEROP, HENDRIKUS W. L. A. M.; SOEMERS, HERMANUS M. J. R.; SANDERS, RENATUS H. M.
To: INNOLUCE B.V.
Reel/Frame 024799/0955 →
Continuity (2)
Provisional Application 60977713 · Oct 5, 2007
Related Publication 20100290142A1 · Nov 18, 2010