IP Library Granted Patent US 8,198,176
Granted Patent B2
US 8,198,176 · App. 12/682,254 · Granted Jun 12, 2012

Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device

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Quick Facts
Patent No.
US 8,198,176
App. No.
12/682,254
Granted
Jun 12, 2012
Kind
B2
Abstract

The method for producing a semiconductor chip with an adhesive film of the present invention comprises steps of preparing a laminate in which at least a divided semiconductor wafer comprising a plurality of semiconductor chips, obtained by forming a cut which separates the semiconductor wafer into a plurality of semiconductor chips on one side of the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed to reach the cut, an adhesive film for a semiconductor and a dicing tape are laminated, the adhesive film for a semiconductor having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load; and dividing the adhesive film for a semiconductor by picking up the plurality of semiconductor chips in a laminating direction of the laminate, thereby preparing a semiconductor chip with an adhesive film.

Claims (11)

1. A method for producing a semiconductor chip with an adhesive film comprising steps of:

preparing a laminate in which at least a divided semiconductor wafer comprising a plurality of semiconductor chips, obtained by forming a cut which separates the semiconductor wafer into a plurality of semiconductor chips on one side of the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed to reach the cut, an adhesive film for a semiconductor and a dicing tape are laminated, the adhesive film for a semiconductor having a thickness in the range of 1 to 15 μm and a tensile elongation at break of less than 5%, and the tensile elongation at break being less than 110% of the elongation at a maximum load; and

dividing the adhesive film for a semiconductor by applying a shearing force thereto, which is generated when picking up the plurality of semiconductor chips in a laminating direction of the laminate, thereby preparing a semiconductor chip with an adhesive film,

said preparing said laminate including attaching the adhesive film for the semiconductor and the dicing tape in that order to the back side of the divided semiconductor wafer, or attaching a composite sheet of said adhesive film and said dicing tape to the back side of the divided semiconductor wafer in such a direction that the adhesive film for the semiconductor is between the back side of the divided semiconductor wafer and the dicing tape.

2. The method for producing a semiconductor chip according to claim 1 , including the further step of preparing the divided semiconductor wafer comprising the plurality of semiconductor chips, by forming the cut which separates the semiconductor wafer into the plurality of semiconductor chips on one side of the semiconductor wafer in a thickness less than that of the semiconductor wafer and by grinding the other side of the semiconductor wafer on which no cut is formed, to reach the cut.

3. The method for producing a semiconductor chip according to claim 1 , wherein said tensile elongation at break is less than 3.5%, and said tensile elongation at break is less than 105% of the elongation at the maximum load.

4. The method for producing a semiconductor chip according to claim 1 , wherein said adhesive film has a thickness of 5 to 15 μm.

5. The method for producing a semiconductor chip according to claim 1 , wherein the adhesive film comprises a high molecular weight component, a thermosetting component and a filler.

6. The method for producing a semiconductor chip according to claim 5 , wherein said high molecular weight component is a thermoplastic resin, and said thermosetting component includes a thermosetting resin.

7. The method for producing a semiconductor chip according to claim 6 , wherein said thermoplastic resin is a polyimide resin, and said thermosetting resin is an epoxy resin.

8. The method for producing a semiconductor chip according to claim 5 , wherein said filler is included in the adhesive film in an amount of less than 30% by mass, based on the total mass of said adhesive film.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 26, 2010
From: HATAKEYAMA, KEIICHI; NAKAMURA, YUUKI
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 024889/0015 →