Memory device etch methods
View Patent ↗A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF 4 ) and trifluoromethane (CHF 3 ) to etch at least the control gate layer.
1. A method of manufacturing a memory device, the method comprising:
forming a plurality of layers over a substrate; and
providing an etch chemistry comprising tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ), and oxygen (O 2 ) to etch the plurality of layers, where a flow rate of CF 4 to CH 3 ranges from about 70:30 to about 99.99:0.1.
2. The method of claim 1 , where the tetrafluoromethane (CF 4 ) is provided at a flow rate ranging from about 70 standard cubic centimeters per minute (sccm) to about 100 sccm.
3. The method of claim 2 , where the tetrafluoromethane (CF 4 ) is provided at the flow rate ranging from about 70 sccm to about 100 sccm for a period ranging from about 30 seconds to about 50 seconds.
4. The method of claim 1 , where the providing an etch chemistry comprises:
providing the oxygen (O 2 ) at a flow rate ranging from about 0.1 sccm to about 50 sccm.
5. The method of claim 4 , where the oxygen (O 2 ) is provided at the flow rate ranging from about 0.1 sccm to about 50 sccm for a period ranging from about 20 seconds to about 50 seconds.
6. The method of claim 1 , where the memory device has a critical dimension ranging from about 25 nanometers to about 65 nanometers.
7. The method of claim 1 , further comprising:
forming a hard mask over the plurality of layers.
8. The method of claim 7 , where the hard mask layer comprises at least one of an oxide, nitride, or oxynitride.
9. A method of manufacturing a memory device, the method comprising:
forming a plurality of layers over a substrate; and
performing an etch process to etch the plurality of layers, the etch process comprising an etch chemistry including tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ), and at least one of octafluorocyclobutane (C 4 F 8 ), hexafluorobutadiene (C 4 F 6 ), or octafluorocyclopentene (C 5 F 8 ), where the at least one of the C 4 F 8 , the C 4 F 6 , or the C 5 F 8 is provided at a flow rate ranging from about 0.1 sccm to about 20 sccm.
10. The method of claim 9 , where the etch chemistry includes providing the tetrafluoromethane (CF 4 ) and the trifluoromethane (CHF 3 ) at a flow rate ratio ranging from about 99.99:0.1 to about 50:50.
11. The method of claim 10 , where the tetrafluoromethane (CF 4 ) is provided at a flow rate ranging from about 50 sccm to about 100 sccm.
12. The method of claim 11 , where the tetrafluoromethane (CF 4 ) is provided at the flow rate ranging from about 50 sccm to about 100 sccm for a period ranging from about 25 seconds to about 60 seconds.
13. The method of claim 9 , where the octafluorocyclobutane (C 4 F 8 ), the hexafluorobutadiene (C 4 F 6 ), or the octafluorocyclopentene (C 5 F 8 ) is provided at the flow rate ranging from about 0.1 sccm to about 20 sccm for a period ranging from about 25 seconds to about 60 seconds.
14. The method of claim 9 , further comprising:
forming a hard mask over the plurality of layers.
15. The method of claim 14 , where the hard mask layer comprises at least one of an oxide, nitride, or oxynitride.
16. The method of claim 9 , where the memory device has a critical dimension ranging from about 80 nanometers to about 150 nanometers.
17. A method of forming a memory device, the method comprising:
forming a plurality of layers over a substrate; and
performing an etch process to etch the plurality of layers, the etch process comprising an etch chemistry including tetrafluoromethane (CF 4 ) and trifluoromethane (CHF 3 ) at a flow rate ratio ranging from about 70:30 to about 99.99:0.1, and
at least one of octafluorocyclobutane (C 4 F 8 ), hexafluorobutadiene (C 4 F 6 ), or octafluorocyclopentene (C 5 F 8 ), where at least one of the C 4 F 8 , the C 4 F 6 , or the C 5 F 8 is provided at a flow rate ranging from about 0.1 sccm to about 20 sccm.