Semiconductor device having recess with varying width and method of manufacturing the same
View Patent ↗A semiconductor device includes a semiconductor chip, and an encapsulation resin which covers and encapsulates the semiconductor chip, the semiconductor chip having a recess formed in the surficial portion thereof; the recess having, on the deeper side than a predetermined portion thereof, a portion having a larger width than the predetermined portion has; and the encapsulation resin being anchored in the recess.
1. A semiconductor device comprising:
a semiconductor chip comprising a surface metal electrode formed thereon;
a lead;
a wire electrically connected between said surface metal electrode and said lead; and
an encapsulation resin which covers and encapsulates said semiconductor chip with said surface metal electrode, said wire and an inner part of said lead,
wherein said surface metal electrode is shaped to have a recess formed in a surficial portion thereof,
said recess formed in said surface metal electrode comprising a narrower portion and a wider portion located below said narrower portion in said recess, and
said encapsulation resin is anchored in said narrower and wider portions of said recess so that said encapsulation resin and said semiconductor chip are engaged with each other.
2. The semiconductor device as claimed in claim 1 ,
wherein said wider portion has a larger width than an opening end of said recess has, on the deeper side than said opening end.
3. The semiconductor device as claimed in claim 1 ,
wherein said recess has, at least in a portion thereof, a profile which increases in the width towards the deeper side.
4. The semiconductor device as claimed in claim 1 ,
wherein said recess has, over the entire portion thereof, a profile which increases in the width towards the deeper side.
5. The semiconductor device as claimed in claim 3 ,
wherein said recess has a reversely-tapered profile.
6. The semiconductor device as claimed in claim 1 ,
wherein said narrower portion has a constant width irrespective of the depth.
7. The semiconductor device as claimed in claim 1 ,
wherein said wider portion has a constant width irrespective of the depth.
8. A method of manufacturing a semiconductor device comprising:
forming a recess in a surficial portion of a surface metal electrode formed on a semiconductor chip;
electrically connecting between said surface metal electrode and a lead with a wire; and
encapsulating said semiconductor chip with an encapsulation resin,
wherein in said forming a recess, said recess is formed to comprise a narrower portion and a wider portion located below said narrower portion in said recess, and
in said encapsulating said semiconductor chip, said encapsulation resin and said semiconductor chip are engaged with each other by anchoring said encapsulation resin into said narrower and wider portions of said recess.
9. The semiconductor device as claimed in claim 3 ,
wherein said recess has, at least in another portion thereof, a profile which decreases in the width towards the deeper side.
10. The method as claimed in claim 8 ,
wherein said narrower portion has a constant width irrespective of the depth.
11. The method as claimed in claim 8 ,
wherein said wider portion has a constant width irrespective of the depth.