Method of plasma vapour deposition
View Patent ↗A method induces plasma vapor deposition of metal into a recess in a workpiece. The method achieves re-sputtering of the metal at the base of the recess with a sputter gas by utilizing a mixture of Ar and He and/or Ne as the sputter gas with a ratio of He and/or Ne:Ar of at least about 10:1.
1. A plasma physical vapor deposition method, comprising:
providing a workpiece having a recess therein, whereby the workpiece has a surface defining the bottom of the recess and surfaces defining sides of the recess;
depositing metal onto the surface defining the bottom of the recess and resputtering the metal deposited at the bottom of the recess onto the surfaces defining the sides of the recess by generating a plasma from a sputtering gas mixture of Ar and at least one of He and Ne wherein the ratio of the at least one of He and Ne to Ar is at least about 10:1, bombarding a target comprising the metal with the plasma to produce a vapor of the metal, and exposing the workpiece to the vapor.
2. The method as claimed in claim 1 , wherein the ratio is about 20:1.
3. The method as claimed in claim 1 , wherein the target and the workpiece are supported in a processing chamber, and the Ar is supplied into the processing chamber at a flow rate of less than 10 sccm and the at least one of He and Ne is/are supplied into the processing chamber at a flow rate of greater than 100 sccm while the metal is being deposited at the bottom of the recess and resputtered.
4. The method as claimed in claim 3 , wherein the sputtering gas includes He and the He is supplied into the processing chamber at a flow rate about 140 sccm and the Ar is supplied into the processing chamber at a flow rate of about 7 sccm while the metal is being deposited at the bottom of the recess and resputtered.
5. The method as claimed in claim 4 , wherein the workpiece is supported on a platen in the processing chamber, the target is supported in the processing chamber, and the exposing of the workpiece to the vapor comprises applying an RF bias power of to the platen 500 W that induces a DC bias of 275V across the platen.
6. The method as claimed in claim 1 , wherein the workpiece is supported on a platen in a processing chamber, the target is supported in the processing chamber, and the exposing of the workpiece to the vapor comprises inducing a DC bias voltage across the platen.
7. The method as claimed in claim 1 , wherein the metal is selected from the group consisting of Copper, Titanium, Tantalum, Gold and Ruthenium.
8. The method as claimed in claim 1 , wherein the discharge current density of the plasma is 0.035 A/cm 2 .
9. The method as claimed in claim 1 , wherein a negative DC bias is applied to the target while the metal is being deposited at the bottom of the recess and resputtered.