Plasma processing apparatus
View Patent ↗The invention provides a plasma processing apparatus in which ring-like conductors 8 a and 8 b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1 a and an outer circumference coil 1 b . Ring-like conductors 8 a and 8 b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8 a and 8 b and the induction antenna 1 and between the ring-like conductors 8 a and 8 b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1 , and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.
1. A plasma processing apparatus comprising:
a vacuum processing chamber for generating plasma in the interior thereof;
a means for introducing gas into the vacuum processing chamber;
a stage which is disposed in the vacuum processing chamber, the stage being configured for placement of a sample on the stage;
an insulating dielectric window which is disposed at an upper area of the vacuum processing chamber;
a coil-like induction antenna which is disposed above the dielectric window and which irradiates an induction magnetic field; and
a high frequency power supply which supplies a high frequency power to the induction antenna via a matching box;
wherein the plasma processing apparatus further comprises a first conductor which is disposed above the dielectric window and which is disposed around a periphery of the induction antenna,
the first conductor has a closed ring shape,
a width of the first conductor gradually increases along a circumference thereof from a power supply end of the induction antenna towards a terminal end of the induction antenna, and
the width of the first conductor is minimum at the power supply end of the induction antenna, and the width of the first conductor is maximum at the terminal end of the induction antenna.
2. The plasma processing apparatus according to claim 1 , wherein
the plasma processing apparatus further comprises a second conductor which is disposed above the dielectric window, a periphery of the second conductor being surrounded by the induction antenna,
the second conductor has a closed ring shape,
a width of the second conductor gradually increases along a circumference thereof from a power supply end of the induction antenna towards a terminal end of the induction antenna, and
the width of the second conductor is minimum at the power supply end of the induction antenna, and the width of the second conductor is maximum at the terminal end of the inner induction antenna.
3. The plasma processing apparatus according to claim 1 , wherein the insulating dielectric window seals the vacuum processing chamber airtightly.
4. The plasma processing apparatus according to claim 1 , wherein neither the first conductor nor the second conductor are connected to a power supply.
5. A plasma processing apparatus comprising:
a vacuum processing chamber configured to generate plasma in an interior thereof;
a gas supply configured to introduce gas into the vacuum processing chamber;
a stage disposed in the vacuum processing chamber, the stage being configured for placement of a sample on the stage;
an insulating dielectric window disposed at an upper area of the vacuum processing chamber;
a coil-like induction antenna disposed above the dielectric window; and
a high frequency power supply configured to supply high frequency power to the induction antenna via a matching box;
wherein the plasma processing apparatus further comprises a first conductor disposed above the dielectric window, the first conductor being disposed around a periphery of the induction antenna,
the first conductor has a closed ring shape,
a width of the first conductor gradually increases along a circumference thereof from a power supply end of the induction antenna towards a terminal end of the induction antenna, and
the width of the first conductor is minimum at the power supply end of the induction antenna, and the width of the first conductor is maximum at the terminal end of the induction antenna.
6. The plasma processing apparatus according to claim 5 , wherein
the plasma processing apparatus further comprises a second conductor disposed above the dielectric window, a periphery of the second conductor is surrounded by the induction antenna,
the second conductor has a closed ring shape,
a width of the second conductor gradually increases along a circumference thereof from a power supply end of the induction antenna towards a terminal end of the induction antenna, and
the width of the second conductor is minimum at the power supply end of the induction antenna, and the width of the second conductor is maximum at the terminal end of the induction antenna.
7. The plasma processing apparatus according to claim 5 , wherein neither the first conductor nor the second conductor are connected to a power supply.