Semiconductor laser and method of manufacturing the same
View Patent ↗Provided is a semiconductor laser including: a substrate (semiconductor substrate); an optical waveguide (active layer waveguide) with a mesa structure that includes an active layer (strain-compensated multiple quantum well active layer) including Al, is provided over the semiconductor substrate; a semiconductor protective layer that is provided so as to cover the top and the side of a mesa of the active layer waveguide; a current block layer that is provided so as to embed the active layer waveguide and the semiconductor protective layer; and a clad layer (p-type InP clad layer) that is provided over the semiconductor protective layer and the current block layer, wherein, the semiconductor protective layer has a semiconductor layer (p-type InGaAsP protective layer) that includes As, but does not include Al.
1. A semiconductor laser comprising:
a substrate;
an optical waveguide with a mesa structure, that includes an active layer including Al and, is provided over said substrate;
a semiconductor protective layer that is provided so as to cover the top and the side of the mesa of said optical waveguide;
a current block layer that is provided so as to embed said optical waveguide and said semiconductor protective layer; and
a clad layer that is provided over said semiconductor protective layer and said current block layer,
wherein said semiconductor protective layer has a semiconductor layer that includes As, but does not include Al.
2. The semiconductor laser as set forth in claim 1 , wherein said semiconductor layer includes a group III-V compound semiconductor.
3. The semiconductor laser as set forth in claim 1 , wherein said semiconductor layer includes an InGaAsP layer or an InAsP layer.
4. The semiconductor laser as set forth in claim 1 , wherein a wavelength corresponding to the band gap of said semiconductor layer is 100 nm or more shorter than a gain peak wavelength of said semiconductor laser.
5. The semiconductor laser as set forth in claim 1 , wherein said semiconductor protective layer is a single layer or a multi-layer structure.
6. The semiconductor laser as set forth in claim 1 , wherein the thickness of the top of the mesa of said semiconductor protective layer is equal to or more than 20 nm and equal to or less than 100 nm.
7. The semiconductor laser as set forth in claim 1 , wherein, a ds/dt ratio is more than 0.15, where the thickness of the top of the mesa of said semiconductor protective layer is dt and the thickness of the side of the mesa of said semiconductor protective layer is ds.