IP Library › Granted Patent US 8,648,365
Granted Patent B2
US 8,648,365 · App. 12/706,431 · Granted Feb 11, 2014

Lighting emitting device package

Inventor: Jung Min Won (Gwangju, KR)
Assignee: LG Innotek Co., Ltd.
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Quick Facts
Patent No.
US 8,648,365
App. No.
12/706,431
Granted
Feb 11, 2014
Kind
B2
Abstract

Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other.

Claims (33)

1. A light emitting device package comprising:

a package body including a cavity formed therein with first and second via holes;

a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole;

a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole;

a light emitting device connected with the first and second electrodes;

an insulating layer insulating the first and second electrodes from the package body; and

a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other,

wherein the reflective layer comprises a stacked structure of an Al 2 O 3 layer and a TiO 2 layer, and

wherein the light emitting device emits a light of blue wavelength, a thickness of the Al 2 O 3 layer is in a range of about 680 Å to about 730 Å, and a thickness of the TiO 2 , layer is in a range of about 480 Å to about 515 Å.

2. The light emitting device package of claim 1 , wherein the insulating layer is formed on top and bottom surfaces of the package body and in the first and second via holes.

3. The light emitting device package of claim 1 , wherein the package body is formed of silicon.

4. The light emitting device package of claim 1 , wherein the reflective layer has a structure in which a pair of the first and second media are stacked four times to fifteenth times.

5. The light emitting device package of claim 1 , wherein an outer surface of the package body is not inclined.

6. The light emitting device package of claim 1 , wherein an outer surface of the package body is inclined.

7. The light emitting device package of claim 1 , further comprising a zener diode disposed on a bottom surface of the package body.

8. The light emitting device package of claim 1 , wherein the light emitting device is connected through at least one selected from flip-chip bonding, die-bonding, and wire bonding.

9. The light emitting device package of claim 1 , wherein the first and second via holes have a circular shape or a polygonal shape.

10. The light emitting device package of claim 1 , further comprising a first zener diode connected between the first electrode and the package body, and a second zener diode connected between the second electrode and the package body.

11. The light emitting device package of claim 1 , wherein at least one of a resin member and a lens is formed over the cavity.

12. The light emitting device package of claim 1 , further comprising a via plug extending downward through the package body and disposed below the light emitting device.

13. The light emitting device package of claim 1 , wherein the first and second electrodes extend below the reflective layer.

14. The illumination device comprising the light emitting device package of claim 1 .

15. A light emitting device package comprising:

a package body formed therein with first and second via holes;

a first electrode formed at one side of an upper portion of the package body and through the first via hole;

a second electrode formed at an opposite side of the upper portion of the package body and through the second via hole;

a light emitting device connected with the first and second electrodes;

an insulating layer insulating the first and second electrodes from the package body;

a reflective layer disposed on the insulating layer and having a structure in which first and second media having different refractive indexes are alternately stacked; and

a via plug extending downward through the package body and disposed below the light emitting device,

wherein the reflective layer comprises a stacked structure of an Al 2 O 3 layer and a TiO 2 layer, and

wherein the light emitting device emits a light of blue wavelength, a thickness of the Al 2 O 3 layer is in a range of about 680 Å to about 730 Å, and a thickness of the TiO 2 , layer is in a range of about 480 Å to about 515 Å.

16. The light emitting device package of claim 15 , wherein the reflective layer has a structure in which a pair of the first and second media are stacked four times to fifteenth times.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2021
From: LG INNOTEK CO., LTD.
To: SUZHOU LEKIN SEMICONDUCTOR CO., LTD.
Reel/Frame 056366/0335 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 18, 2010
From: WON, JUNG MIN
To: LG INNOTEK CO., LTD.
Reel/Frame 023956/0559 →
Priority Claims (1)
KR 10-2009-0013155 · Feb 17, 2009 · national
Continuity (1)
Related Publication 20100207152A1 · Aug 19, 2010