Semiconductor device with solder balls having high reliability
View Patent ↗A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.
1. A method of manufacturing a semiconductor device comprising:
(a) forming a solder resist having an opening on a substrate;
(b) forming a Ni inclusion plating layer inside said opening; and
(c1) placing a Sn—Ag—Cu-based solder ball including Zn on said Ni inclusion plating layer, and (c2) forming an alloy layer composed of Ni and Zn between said Sn—Ag—Cu-based solder ball and said Ni inclusion plating layer by a heat treatment.
2. The method of manufacturing a semiconductor device according to claim 1 , further comprising:
(d) forming a Cu layer inside said opening on said substrate before forming said Ni inclusion plating layer.
3. The method of manufacturing a semiconductor device according to claim 1 , wherein a thickness of said alloy layer is in a range of 0.02 μm to 0.3 μm.
4. The method of manufacturing a semiconductor device according to claim 1 , wherein said Sn—Ag—Cu-based solder ball includes Zn at an amount of about 1 weight %.
5. A method of manufacturing a semiconductor device comprising: (a) forming a solder resist having an opening on a substrate; (b) forming a Ni inclusion plating layer inside said opening, wherein said Ni inclusion plating layer is composed of Ni and Au;
(c1) placing said Sn—Ag—Cu-based solder ball on said Ni inclusion plating layer, and
(c2) forming said alloy layer composed of Ni, Au and Zn between said Sn—Ag—Cu-based solder ball and said Ni inclusion plating layer by a heat treatment.
6. The method of manufacturing a semiconductor device according to claim 5 , further comprising:
(d) forming a Cu layer inside said opening on said substrate before forming said Ni inclusion plating layer.
7. The method of manufacturing a semiconductor device according to claim 5 , wherein a thickness of said alloy layer is in a range of 0.02 μm to 0.3 μm.
8. the method of manufacturing a semiconductor device according to claim 5 , wherein said Sn—Ag—Cu-based solder ball includes Zn at an amount of about 1 weight %.
9. A method of manufacturing a semiconductor device comprising:
(a) providing a substrate including a solder resist having an opening, a Ni inclusion plating layer inside said opening and an Au plating layer on said Ni inclusion plating layer inside said opening;
(b) placing a Sn—Ag—Cu-based solder ball including Zn on said Au plating layer;
(c) melting said solder ball by heating said substrate at a temperature equal to or higher than a melting point of said solder ball; and
(d) forming an alloy layer including Ni, Au and Zn between a Ni layer of said Ni inclusion plating layer and said solder ball, said alloy layer being formed of Ni and Au inside said opening and Zn included in said solder ball.